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Annie Baudrant
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Saint Martin D'Heres, FR
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Patent Grant
Method of fabrication of MOS transistors having electrodes of metal...
Patent number
4,780,429
Issue date
Oct 25, 1988
Societe pour L'Etude et la Fabrication de Circuits Integres Speciaux EFCIS
Alain Roche
H01 - BASIC ELECTRIC ELEMENTS