Anri Nakajima

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Higashi-Hiroshima, JP

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Patents Grantslast 30 patents

Information Patent Grant
Method of fabricating semiconductor device
- Patent number 6,933,249
- Issue date Aug 23, 2005
- Tokyo Electron Limited
- Shin Yokoyama
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Mos field effect transistor and mos capacitor
- Patent number 6,787,863
- Issue date Sep 7, 2004
- Semiconductor Technology Academic Research Center
- Anri Nakajima
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Semiconductor Device
- Publication number 20080106469
- Publication date May 8, 2008
- Japan Science and Technology Agency
- Takamaro Kikkawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of fabricating semiconductor device
- Publication number 20040152339
- Publication date Aug 5, 2004
- Shin Yokoyama
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
- Publication number 20040051152
- Publication date Mar 18, 2004
- SEMICONDUCTOR TECHNOLOGY ACADEMIC RESEARCH CENTER
- Anri Nakajima
- H01 - BASIC ELECTRIC ELEMENTS