Anseime Chen

Person

Hsin-Chu City, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Method for planarizing barc layer in dual damascene process
- Patent number 6,680,252
- Issue date Jan 20, 2004
- United Microelectronics Corp.
- Anseime Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for increasing a line width window in a semiconductor process
- Patent number 6,492,097
- Issue date Dec 10, 2002
- United Microelectronics Corp.
- Anseime Chen
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Thermal reflow photolithographic process
- Patent number 6,489,085
- Issue date Dec 3, 2002
- United Microelectronics Corp.
- I-Hsiung Huang
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Method of improving photoresist profile
- Patent number 6,444,410
- Issue date Sep 3, 2002
- United Microelectronics Corp.
- I-Hsiung Huang
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Alignment mark design
- Patent number 6,420,791
- Issue date Jul 16, 2002
- United Microelectronics Corp.
- Chien-Chao Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for avoiding photo residue in dual damascene with acid treat...
- Patent number 6,417,096
- Issue date Jul 9, 2002
- United Microelectronics Corp.
- Anseime Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming dual damascene structure
- Patent number 6,350,681
- Issue date Feb 26, 2002
- United Microelectronics Corp.
- Anseime Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low-K dual damascene integration process
- Patent number 6,323,123
- Issue date Nov 27, 2001
- United Microelectronics Corp.
- Chih-Chien Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-phase phase shift mask
- Patent number 6,312,855
- Issue date Nov 6, 2001
- United Microelectronics Corp.
- Jiunn-Ren Hwang
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Optical proximity correction of L and T shaped patterns on negative...
- Patent number 6,080,527
- Issue date Jun 27, 2000
- United Microelectronics Corp.
- I-Hsiung Huang
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY

Patents Applicationslast 30 patents

Information Patent Application
Method of forming storage nodes in a DRAM
- Publication number 20020168590
- Publication date Nov 14, 2002
- Jiunn-Ren Hwang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for improving adhesion of low k materials with adjacent layer
- Publication number 20020164889
- Publication date Nov 7, 2002
- Cheng-Yuan Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Thermal reflow photolithographic process
- Publication number 20020076656
- Publication date Jun 20, 2002
- I-Hsiung Huang
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Application
Methof for forming dielectric of low dielectric constant on hydroph...
- Publication number 20020034647
- Publication date Mar 21, 2002
- Anseime Chen
- B32 - LAYERED PRODUCTS

Anseime Chen

Person

Patents Grantslast 30 patents

Method for planarizing barc layer in dual damascene process

Process for increasing a line width window in a semiconductor process

Thermal reflow photolithographic process

Method of improving photoresist profile

Alignment mark design

Method for avoiding photo residue in dual damascene with acid treat...

Method of forming dual damascene structure

Low-K dual damascene integration process

Three-phase phase shift mask

Optical proximity correction of L and T shaped patterns on negative...

Patents Applicationslast 30 patents

Method of forming storage nodes in a DRAM

Method for improving adhesion of low k materials with adjacent layer

Thermal reflow photolithographic process

Methof for forming dielectric of low dielectric constant on hydroph...