Anthony K. Stamper

Person

Williston, VT, US

People

Patents Grantslast 30 patents

Information Patent Grant
Heterojunction bipolar transistor with buried trap rich isolation r...
- Patent number 12,170,313
- Issue date Dec 17, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Vibhor Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor
- Patent number 12,142,686
- Issue date Nov 12, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Anthony K. Stamper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IC structure including porous semiconductor layer in bulk substrate...
- Patent number 12,119,352
- Issue date Oct 15, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Uzma B. Rana
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IC structure including porous semiconductor layer under trench isol...
- Patent number 12,027,582
- Issue date Jul 2, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Uzma B. Rana
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor on insulator wafer with cavity structures
- Patent number 12,027,580
- Issue date Jul 2, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Anthony K. Stamper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistors with stress material for improve...
- Patent number 11,876,123
- Issue date Jan 16, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Anthony K. Stamper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistor with emitter base junction oxide...
- Patent number 11,848,192
- Issue date Dec 19, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Vibhor Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bulk wafer switch isolation
- Patent number 11,823,948
- Issue date Nov 21, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Uzma Rana
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with air gap under raised source/drain region in bulk se...
- Patent number 11,817,479
- Issue date Nov 14, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Uzma B. Rana
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistor with buried trap rich isolation r...
- Patent number 11,791,334
- Issue date Oct 17, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Vibhor Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor with shallow trench isolation features with...
- Patent number 11,764,225
- Issue date Sep 19, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Anthony K. Stamper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bulk substrates with a self-aligned buried polycrystalline layer
- Patent number 11,749,559
- Issue date Sep 5, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Steven M. Shank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with embedded isolation layer in bulk substrate
- Patent number 11,749,717
- Issue date Sep 5, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Uzma Rana
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual thickness fuse structures
- Patent number 11,749,599
- Issue date Sep 5, 2023
- GLOBALFOUNDRIES Inc.
- John J. Pekarik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertically stacked field effect transistors
- Patent number 11,728,348
- Issue date Aug 15, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Anthony K. Stamper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistor with buried trap rich isolation r...
- Patent number 11,721,719
- Issue date Aug 8, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Vibhor Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structure with semiconductor-based isolation str...
- Patent number 11,710,655
- Issue date Jul 25, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Anthony K. Stamper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IC structure including porous semiconductor layer under trench isol...
- Patent number 11,677,000
- Issue date Jun 13, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Uzma B. Rana
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structures with a substrate biasing scheme
- Patent number 11,658,177
- Issue date May 23, 2023
- GLOBALFOUNDRIES U.S. INC.
- Anthony K. Stamper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device including optofluidic sensor with integrated photodiode
- Patent number 11,639,895
- Issue date May 2, 2023
- GLOBALFOUNDRIES U.S. INC.
- Vibhor Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thermally and electrically conductive interconnects
- Patent number 11,637,068
- Issue date Apr 25, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Anthony K. Stamper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with air gap under source/drain region in bulk semicondu...
- Patent number 11,605,710
- Issue date Mar 14, 2023
- GLOBALFOUNDRIES U.S. INC.
- Uzma B. Rana
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Local interconnect layer with device within second dielectric mater...
- Patent number 11,574,863
- Issue date Feb 7, 2023
- GLOBALFOUNDRIES U.S. INC.
- Anthony K. Stamper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Photodetectors with a lateral composition gradient
- Patent number 11,569,405
- Issue date Jan 31, 2023
- GLOBALFOUNDRIES U.S. INC.
- Steven M. Shank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shear-mode chemical/physical sensor for liquid environment sensing...
- Patent number 11,549,913
- Issue date Jan 10, 2023
- VANGUARD INTERNATIONAL SEMICONDUCTOR SINGAPORE PTE. LTD.
- Humberto Campanella-Pineda
- G01 - MEASURING TESTING
Information Patent Grant
Gate contacts with airgap isolation
- Patent number 11,545,548
- Issue date Jan 3, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Steven M. Shank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bulk substrates with a self-aligned buried polycrystalline layer
- Patent number 11,527,432
- Issue date Dec 13, 2022
- GLOBALFOUNDRIES U.S. INC.
- Steven M. Shank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-V compound semiconductor layer stacks with electrical isolation...
- Patent number 11,515,397
- Issue date Nov 29, 2022
- GLOBALFOUNDRIES U.S. INC.
- Anthony K. Stamper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wafer with localized semiconductor on insulator regions with cavity...
- Patent number 11,488,980
- Issue date Nov 1, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Siva P. Adusumilli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structure and method for bipolar transistor stac...
- Patent number 11,488,950
- Issue date Nov 1, 2022
- GLOBALFOUNDRIES U.S. INC.
- Uzma B. Rana
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
HETEROJUNCTION BIPOLAR TRANSISTOR WITH BURIED TRAP RICH ISOLATION R...
- Publication number 20250015128
- Publication date Jan 9, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Vibhor JAIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR ON INSULATOR WAFER WITH CAVITY STRUCTURES
- Publication number 20240297216
- Publication date Sep 5, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Anthony K. STAMPER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROJUNCTION BIPOLAR TRANSISTOR WITH BURIED TRAP RICH ISOLATION R...
- Publication number 20230402453
- Publication date Dec 14, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Vibhor JAIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR WITH SHALLOW TRENCH ISOLATION FEATURES WITH...
- Publication number 20230378183
- Publication date Nov 23, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Anthony K. STAMPER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROJUNCTION BIPOLAR TRANSISTOR WITH BURIED TRAP RICH ISOLATION R...
- Publication number 20230299132
- Publication date Sep 21, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Vibhor JAIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IC STRUCTURE INCLUDING POROUS SEMICONDUCTOR LAYER IN BULK SUBSTRATE...
- Publication number 20230215869
- Publication date Jul 6, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Uzma B. Rana
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT-OVER-ACTIVE-GATE TRANSISTOR STRUCTURES WITH CONTACTS LANDED...
- Publication number 20230125886
- Publication date Apr 27, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Steven M. Shank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IC STRUCTURE INCLUDING POROUS SEMICONDUCTOR LAYER UNDER TRENCH ISOL...
- Publication number 20230114096
- Publication date Apr 13, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Uzma B. Rana
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IC STRUCTURE INCLUDING POROUS SEMICONDUCTOR LAYER UNDER TRENCH ISOL...
- Publication number 20230108712
- Publication date Apr 6, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Uzma B. Rana
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH AIR GAP UNDER RAISED SOURCE/DRAIN REGION IN BULK SE...
- Publication number 20230096544
- Publication date Mar 30, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Uzma B. Rana
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BULK SUBSTRATES WITH A SELF-ALIGNED BURIED POLYCRYSTALLINE LAYER
- Publication number 20230063731
- Publication date Mar 2, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Steven M. Shank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE CONTACTS WITH AIRGAP ISOLATION
- Publication number 20220416020
- Publication date Dec 29, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Steven M. Shank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR WITH SHALLOW TRENCH ISOLATION FEATURES WITH...
- Publication number 20220399372
- Publication date Dec 15, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Anthony K. STAMPER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR
- Publication number 20220384659
- Publication date Dec 1, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Anthony K. STAMPER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE INCLUDING OPTOFLUIDIC SENSOR WITH INTEGRATED PHOTODIODE
- Publication number 20220291126
- Publication date Sep 15, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Vibhor Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH EMBEDDED ISOLATION LAYER IN BULK SUBSTRATE
- Publication number 20220262900
- Publication date Aug 18, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Uzma RANA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURE AND METHOD FOR BIPOLAR TRANSISTOR STAC...
- Publication number 20220254774
- Publication date Aug 11, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Uzma B. Rana
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOCAL INTERCONNECT LAYER WITH DEVICE WITHIN SECOND DIELECTRIC MATER...
- Publication number 20220254715
- Publication date Aug 11, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Anthony K. Stamper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR (FET) STACK AND METHODS TO FORM SAME
- Publication number 20220223688
- Publication date Jul 14, 2022
- GlobalFoundries U.S. INC.
- Steven M. Shank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BULK WAFER SWITCH ISOLATION
- Publication number 20220208599
- Publication date Jun 30, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Uzma RANA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL-FREE FUSE STRUCTURES
- Publication number 20220199525
- Publication date Jun 23, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Anthony K. STAMPER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH AIR GAP UNDER SOURCE/DRAIN REGION IN BULK SEMICONDU...
- Publication number 20220190108
- Publication date Jun 16, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Uzma B. Rana
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THERMALLY AND ELECTRICALLY CONDUCTIVE INTERCONNECTS
- Publication number 20220189877
- Publication date Jun 16, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Anthony K. STAMPER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURES WITH A SUBSTRATE BIASING SCHEME
- Publication number 20220181317
- Publication date Jun 9, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Anthony K. Stamper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROJUNCTION BIPOLAR TRANSISTOR WITH BURIED TRAP RICH ISOLATION R...
- Publication number 20220123107
- Publication date Apr 21, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Vibhor JAIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROJUNCTION BIPOLAR TRANSISTOR WITH BURIED TRAP RICH ISOLATION R...
- Publication number 20220122968
- Publication date Apr 21, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Vibhor JAIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BULK WAFER SWITCH ISOLATION
- Publication number 20220115262
- Publication date Apr 14, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Uzma RANA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR ON INSULATOR WAFER WITH CAVITY STRUCTURES
- Publication number 20220093731
- Publication date Mar 24, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Anthony K. STAMPER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE COMPRISING AN OPTOFLUIDIC SENSOR WITH INTEGRATED PHOTODIODE
- Publication number 20220062896
- Publication date Mar 3, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Steven M. Shank
- B01 - PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
Information Patent Application
WAFER WITH LOCALIZED SEMICONDUCTOR ON INSULATOR REGIONS WITH CAVITY...
- Publication number 20220068975
- Publication date Mar 3, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Siva P. ADUSUMILLI
- H01 - BASIC ELECTRIC ELEMENTS

Anthony K. Stamper

Person

Patents Grantslast 30 patents

Heterojunction bipolar transistor with buried trap rich isolation r...

Field effect transistor

IC structure including porous semiconductor layer in bulk substrate...

IC structure including porous semiconductor layer under trench isol...

Semiconductor on insulator wafer with cavity structures

Heterojunction bipolar transistors with stress material for improve...

Heterojunction bipolar transistor with emitter base junction oxide...

Bulk wafer switch isolation

Transistor with air gap under raised source/drain region in bulk se...

Heterojunction bipolar transistor with buried trap rich isolation r...

Field effect transistor with shallow trench isolation features with...

Bulk substrates with a self-aligned buried polycrystalline layer

Transistor with embedded isolation layer in bulk substrate

Dual thickness fuse structures

Vertically stacked field effect transistors

Heterojunction bipolar transistor with buried trap rich isolation r...

Integrated circuit structure with semiconductor-based isolation str...

IC structure including porous semiconductor layer under trench isol...

Semiconductor device structures with a substrate biasing scheme

Device including optofluidic sensor with integrated photodiode

Thermally and electrically conductive interconnects

Transistor with air gap under source/drain region in bulk semicondu...

Local interconnect layer with device within second dielectric mater...

Photodetectors with a lateral composition gradient

Shear-mode chemical/physical sensor for liquid environment sensing...

Gate contacts with airgap isolation

Bulk substrates with a self-aligned buried polycrystalline layer

III-V compound semiconductor layer stacks with electrical isolation...

Wafer with localized semiconductor on insulator regions with cavity...

Integrated circuit structure and method for bipolar transistor stac...

Patents Applicationslast 30 patents

HETEROJUNCTION BIPOLAR TRANSISTOR WITH BURIED TRAP RICH ISOLATION R...

SEMICONDUCTOR ON INSULATOR WAFER WITH CAVITY STRUCTURES

HETEROJUNCTION BIPOLAR TRANSISTOR WITH BURIED TRAP RICH ISOLATION R...

FIELD EFFECT TRANSISTOR WITH SHALLOW TRENCH ISOLATION FEATURES WITH...

HETEROJUNCTION BIPOLAR TRANSISTOR WITH BURIED TRAP RICH ISOLATION R...

IC STRUCTURE INCLUDING POROUS SEMICONDUCTOR LAYER IN BULK SUBSTRATE...

CONTACT-OVER-ACTIVE-GATE TRANSISTOR STRUCTURES WITH CONTACTS LANDED...

IC STRUCTURE INCLUDING POROUS SEMICONDUCTOR LAYER UNDER TRENCH ISOL...

IC STRUCTURE INCLUDING POROUS SEMICONDUCTOR LAYER UNDER TRENCH ISOL...

TRANSISTOR WITH AIR GAP UNDER RAISED SOURCE/DRAIN REGION IN BULK SE...

BULK SUBSTRATES WITH A SELF-ALIGNED BURIED POLYCRYSTALLINE LAYER

GATE CONTACTS WITH AIRGAP ISOLATION

FIELD EFFECT TRANSISTOR WITH SHALLOW TRENCH ISOLATION FEATURES WITH...

FIELD EFFECT TRANSISTOR

DEVICE INCLUDING OPTOFLUIDIC SENSOR WITH INTEGRATED PHOTODIODE

TRANSISTOR WITH EMBEDDED ISOLATION LAYER IN BULK SUBSTRATE

INTEGRATED CIRCUIT STRUCTURE AND METHOD FOR BIPOLAR TRANSISTOR STAC...

LOCAL INTERCONNECT LAYER WITH DEVICE WITHIN SECOND DIELECTRIC MATER...

FIELD EFFECT TRANSISTOR (FET) STACK AND METHODS TO FORM SAME

BULK WAFER SWITCH ISOLATION

METAL-FREE FUSE STRUCTURES

TRANSISTOR WITH AIR GAP UNDER SOURCE/DRAIN REGION IN BULK SEMICONDU...

THERMALLY AND ELECTRICALLY CONDUCTIVE INTERCONNECTS

SEMICONDUCTOR DEVICE STRUCTURES WITH A SUBSTRATE BIASING SCHEME

HETEROJUNCTION BIPOLAR TRANSISTOR WITH BURIED TRAP RICH ISOLATION R...

HETEROJUNCTION BIPOLAR TRANSISTOR WITH BURIED TRAP RICH ISOLATION R...

BULK WAFER SWITCH ISOLATION

SEMICONDUCTOR ON INSULATOR WAFER WITH CAVITY STRUCTURES

DEVICE COMPRISING AN OPTOFLUIDIC SENSOR WITH INTEGRATED PHOTODIODE

WAFER WITH LOCALIZED SEMICONDUCTOR ON INSULATOR REGIONS WITH CAVITY...