Anthony Mowry

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Dresden, DE

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device having a strained semiconductor alloy concentr...
- Patent number 7,939,399
- Issue date May 10, 2011
- GLOBALFOUNDRIES Inc.
- Anthony Mowry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Blocking pre-amorphization of a gate electrode of a transistor
- Patent number 7,879,667
- Issue date Feb 1, 2011
- GLOBALFOUNDRIES Inc.
- Anthony Mowry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for creating tensile strain by repeatedly applied stress mem...
- Patent number 7,790,537
- Issue date Sep 7, 2010
- GLOBALFOUNDRIES Inc.
- Andy Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a semiconductor structure comprising a field effe...
- Patent number 7,772,077
- Issue date Aug 10, 2010
- Advanced Micro Devices, Inc.
- Andreas Gehring
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
BLOCKING PRE-AMORPHIZATION OF A GATE ELECTRODE OF A TRANSISTOR
- Publication number 20090001371
- Publication date Jan 1, 2009
- Anthony Mowry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR CREATING TENSILE STRAIN BY REPEATEDLY APPLIED STRESS MEM...
- Publication number 20080237723
- Publication date Oct 2, 2008
- Andy Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING A STRAINED SEMICONDUCTOR ALLOY CONCENTR...
- Publication number 20080203427
- Publication date Aug 28, 2008
- Anthony Mowry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A SEMICONDUCTOR STRUCTURE COMPRISING A FIELD EFFE...
- Publication number 20080102590
- Publication date May 1, 2008
- Andreas Gehring
- H01 - BASIC ELECTRIC ELEMENTS