Antonio Luis Pacheco Rotondaro

Person

Dallas, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device with gate-undercutting recessed region
- Patent number 8,329,589
- Issue date Dec 11, 2012
- Texas Instruments Incorporated
- Antonio Luis Pacheco Rotondaro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with gate-undercutting recessed region
- Patent number 8,288,805
- Issue date Oct 16, 2012
- Texas Instruments Incorporated
- Antonio Luis Pacheco Rotondaro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with gate-undercutting recessed region
- Patent number 8,049,254
- Issue date Nov 1, 2011
- Texas Instruments Incorporated
- Antonio Luis Pacheco Rotondaro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Work function control of metals
- Patent number 7,291,527
- Issue date Nov 6, 2007
- Texas Instruments Incorporated
- James Joseph Chambers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Systems and methods for low leakage strained-channel transistor
- Patent number 7,026,232
- Issue date Apr 11, 2006
- Texas Instruments Incorporated
- Elisabeth Marley Koontz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-K gate dielectric defect gettering using dopants
- Patent number 7,015,088
- Issue date Mar 21, 2006
- Texas Instruments Incorporated
- Luigi Colombo
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE WITH GATE-UNDERCUTTING RECESSED REGION
- Publication number 20110316089
- Publication date Dec 29, 2011
- TEXAS INSTRUMENTS INCORPORATED
- Antonio Luis Pacheco Rotondaro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH GATE-UNDERCUTTING RECESSED REGION
- Publication number 20090174005
- Publication date Jul 9, 2009
- TEXAS INSTRUMENTS INCORPORATED
- Antonio Luis Pacheco Rotondaro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method to Reduce Transistor Gate to Source/Drain Overlap Capacitanc...
- Publication number 20070166906
- Publication date Jul 19, 2007
- TEXAS INSTRUMENTS INCORPORATED
- Majid Movahed Mansoori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for reduced circuit area and improved gate length control
- Publication number 20060113604
- Publication date Jun 1, 2006
- TEXAS INSTRUMENTS INCORPORATED
- Howard Lee Tigelaar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method to selectively strain NMOS devices using a cap poly layer
- Publication number 20060073650
- Publication date Apr 6, 2006
- Seetharaman Sridhar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for forming interfacial layer for deposition of high-k diel...
- Publication number 20040126944
- Publication date Jul 1, 2004
- Antonio Luis Pacheco Rotondaro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Noval chemistry and method for the selective removal of high-k diel...
- Publication number 20030109106
- Publication date Jun 12, 2003
- Antonio Luis Pacheco Rotondaro
- H01 - BASIC ELECTRIC ELEMENTS

Antonio Luis Pacheco Rotondaro

Person

Patents Grantslast 30 patents

Semiconductor device with gate-undercutting recessed region

Semiconductor device with gate-undercutting recessed region

Semiconductor device with gate-undercutting recessed region

Work function control of metals

Systems and methods for low leakage strained-channel transistor

High-K gate dielectric defect gettering using dopants

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE WITH GATE-UNDERCUTTING RECESSED REGION

SEMICONDUCTOR DEVICE WITH GATE-UNDERCUTTING RECESSED REGION

Method to Reduce Transistor Gate to Source/Drain Overlap Capacitanc...

Methods for reduced circuit area and improved gate length control

Method to selectively strain NMOS devices using a cap poly layer

Methods for forming interfacial layer for deposition of high-k diel...

Noval chemistry and method for the selective removal of high-k diel...