Antonio Vellei

Person

Villach, AT

People

Patents Grantslast 30 patents

Information Patent Grant
Chip package, method of forming a chip package and method of formin...
- Patent number 12,033,972
- Issue date Jul 9, 2024
- Infineon Technologies AG
- Joachim Mahler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device having a barrier region
- Patent number 12,034,066
- Issue date Jul 9, 2024
- Infineon Technologies AG
- Antonio Vellei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of processing a power semiconductor device
- Patent number 11,594,621
- Issue date Feb 28, 2023
- Infineon Technologies AG
- Antonio Vellei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IGBT with dV/dt controllability
- Patent number 11,581,428
- Issue date Feb 14, 2023
- Infineon Technologies AG
- Alexander Philippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RC IGBT
- Patent number 11,469,317
- Issue date Oct 11, 2022
- Infineon Technologies Austria AG
- Frank Dieter Pfirsch
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Method of forming an electrical contact and method of forming a chi...
- Patent number 10,978,418
- Issue date Apr 13, 2021
- Infineon Technologies AG
- Joachim Mahler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IGBT having a barrier region
- Patent number 10,930,772
- Issue date Feb 23, 2021
- Infineon Technologies AG
- Alexander Philippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device having trench electrodes biased at three...
- Patent number 10,910,487
- Issue date Feb 2, 2021
- Infineon Technologies AG
- Alexander Philippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing IGBT with dV/dt controllability
- Patent number 10,854,739
- Issue date Dec 1, 2020
- Infineon Technologies AG
- Antonio Vellei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IGBT with dV/dt controllability
- Patent number 10,840,362
- Issue date Nov 17, 2020
- Infineon Technologies AG
- Alexander Philippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing IGBT with dV/dt controllability
- Patent number 10,615,272
- Issue date Apr 7, 2020
- Infineon Technologies AG
- Antonio Vellei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench transistor device
- Patent number 10,608,104
- Issue date Mar 31, 2020
- Infineon Technologies AG
- Alexander Philippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Chip package and method of forming a chip package with a metal cont...
- Patent number 10,461,056
- Issue date Oct 29, 2019
- Infineon Technologies AG
- Joachim Mahler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IGBT with dV/dt controllability
- Patent number 10,439,055
- Issue date Oct 8, 2019
- Infineon Technologies AG
- Alexander Philippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device with dV/dt controllability through selec...
- Patent number 10,347,754
- Issue date Jul 9, 2019
- Infineon Technologies AG
- Alexander Philippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor device with an emitter having two types of emitt...
- Patent number 10,224,206
- Issue date Mar 5, 2019
- Infineon Technologies AG
- Roman Baburske
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor transistor having increased bipolar amplification
- Patent number 9,899,504
- Issue date Feb 20, 2018
- Infineon Technologies AG
- Roman Baburske
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor device with an emitter having two types of emitt...
- Patent number 9,741,571
- Issue date Aug 22, 2017
- Infineon Technologies AG
- Roman Baburske
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing an insulated gate bipolar transistor with m...
- Patent number 9,653,568
- Issue date May 16, 2017
- Infineon Technologies AG
- Johannes Georg Laven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with auxiliary structure including deep level...
- Patent number 9,647,100
- Issue date May 9, 2017
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and insulated gate bipolar transistor with bar...
- Patent number 9,553,179
- Issue date Jan 24, 2017
- Infineon Technologies AG
- Antonio Vellei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS-transistor with separated electrodes arranged in a trench
- Patent number 9,263,552
- Issue date Feb 16, 2016
- Infineon Technologies AG
- Antonio Vellei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate bipolar transistor with mesa sections between cell t...
- Patent number 9,076,838
- Issue date Jul 7, 2015
- Infineon Technologies AG
- Johannes Georg Laven
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE WITH A SILICON CARBIDE PORTION AND A GLASS STR...
- Publication number 20250096149
- Publication date Mar 20, 2025
- INFINEON TECHNOLOGIES AG
- Rudolf Elpelt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING MACRO CELLS
- Publication number 20230290827
- Publication date Sep 14, 2023
- INFINEON TECHNOLOGIES AG
- Antonio Vellei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device Having a Barrier Region
- Publication number 20230207673
- Publication date Jun 29, 2023
- INFINEON TECHNOLOGIES AG
- Antonio Vellei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RC IGBT
- Publication number 20210296479
- Publication date Sep 23, 2021
- Frank Dieter Pfirsch
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
CHIP PACKAGE, METHOD OF FORMING A CHIP PACKAGE AND METHOD OF FORMIN...
- Publication number 20210082861
- Publication date Mar 18, 2021
- INFINEON TECHNOLOGIES AG
- Joachim Mahler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Processing a Power Semiconductor Device
- Publication number 20210050436
- Publication date Feb 18, 2021
- Antonio Vellei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IGBT with dV/dt Controllability
- Publication number 20210043759
- Publication date Feb 11, 2021
- INFINEON TECHNOLOGIES AG
- Alexander Philippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Producing IGBT with dV/dt Controllability
- Publication number 20200235232
- Publication date Jul 23, 2020
- INFINEON TECHNOLOGIES AG
- Antonio Vellei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHIP PACKAGE AND METHOD OF FORMING A CHIP PACKAGE WITH A METAL CONT...
- Publication number 20200013749
- Publication date Jan 9, 2020
- INFINEON TECHNOLOGIES AG
- Joachim Mahler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IGBT Having a Barrier Region
- Publication number 20200006539
- Publication date Jan 2, 2020
- Alexander Philippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE WITH DV/DT CONTROLLABILITY
- Publication number 20190319122
- Publication date Oct 17, 2019
- INFINEON TECHNOLOGIES AG
- Alexander Philippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Producing IGBT with dV/dt Controllability
- Publication number 20190123185
- Publication date Apr 25, 2019
- INFINEON TECHNOLOGIES AG
- Antonio Vellei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IGBT with dV/dt Controllability
- Publication number 20190123186
- Publication date Apr 25, 2019
- INFINEON TECHNOLOGIES AG
- Alexander Philippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IGBT with dV/dt Controllability
- Publication number 20180286971
- Publication date Oct 4, 2018
- INFINEON TECHNOLOGIES AG
- Alexander Philippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE WITH DV/DT CONTROLLABILITY
- Publication number 20180076309
- Publication date Mar 15, 2018
- INFINEON TECHNOLOGIES AG
- Alexander Philippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Bipolar Transistor Device With an Emitter Having Two Types of Emitt...
- Publication number 20180012764
- Publication date Jan 11, 2018
- INFINEON TECHNOLOGIES AG
- Roman Baburske
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHIP PACKAGE, METHOD OF FORMING A CHIP PACKAGE AND METHOD OF FORMIN...
- Publication number 20170338169
- Publication date Nov 23, 2017
- INFINEON TECHNOLOGIES AG
- Joachim Mahler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Transistor Having Increased Bipolar Amplification
- Publication number 20170148904
- Publication date May 25, 2017
- INFINEON TECHNOLOGIES AG
- Roman Baburske
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Bipolar Transistor Device With an Emitter Having Two Types of Emitt...
- Publication number 20160284803
- Publication date Sep 29, 2016
- INFINEON TECHNOLOGIES AG
- Roman Baburske
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Auxiliary Structure Including Deep Level...
- Publication number 20160111528
- Publication date Apr 21, 2016
- INFINEON TECHNOLOGIES AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOS-Transistor with Separated Electrodes Arranged in a Trench
- Publication number 20150357437
- Publication date Dec 10, 2015
- INFINEON TECHNOLOGIES AG
- Antonio Vellei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH TRANSISTOR DEVICE
- Publication number 20150279985
- Publication date Oct 1, 2015
- INFINEON TECHNOLOGIES AG
- Alexander Philippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Manufacturing an Insulated Gate Bipolar Transistor with M...
- Publication number 20150270369
- Publication date Sep 24, 2015
- INFINEON TECHNOLOGIES AG
- Johannes Georg Laven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Insulated Gate Bipolar Transistor with Bar...
- Publication number 20150221756
- Publication date Aug 6, 2015
- INFINEON TECHNOLOGIES AG
- Antonio Vellei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Insulated Gate Bipolar Transistor with Mesa Sections Between Cell T...
- Publication number 20150076554
- Publication date Mar 19, 2015
- INFINEON TECHNOLOGIES AG
- Johannes Georg Laven
- H01 - BASIC ELECTRIC ELEMENTS

Antonio Vellei

Person

Patents Grantslast 30 patents

Chip package, method of forming a chip package and method of formin...

Power semiconductor device having a barrier region

Method of processing a power semiconductor device

IGBT with dV/dt controllability

RC IGBT

Method of forming an electrical contact and method of forming a chi...

IGBT having a barrier region

Power semiconductor device having trench electrodes biased at three...

Method for producing IGBT with dV/dt controllability

IGBT with dV/dt controllability

Method for producing IGBT with dV/dt controllability

Trench transistor device

Chip package and method of forming a chip package with a metal cont...

IGBT with dV/dt controllability

Power semiconductor device with dV/dt controllability through selec...

Bipolar transistor device with an emitter having two types of emitt...

Power semiconductor transistor having increased bipolar amplification

Bipolar transistor device with an emitter having two types of emitt...

Method of manufacturing an insulated gate bipolar transistor with m...

Semiconductor device with auxiliary structure including deep level...

Semiconductor device and insulated gate bipolar transistor with bar...

MOS-transistor with separated electrodes arranged in a trench

Insulated gate bipolar transistor with mesa sections between cell t...

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE WITH A SILICON CARBIDE PORTION AND A GLASS STR...

SEMICONDUCTOR DEVICE HAVING MACRO CELLS

Power Semiconductor Device Having a Barrier Region

RC IGBT

CHIP PACKAGE, METHOD OF FORMING A CHIP PACKAGE AND METHOD OF FORMIN...

Method of Processing a Power Semiconductor Device

IGBT with dV/dt Controllability

Method for Producing IGBT with dV/dt Controllability

CHIP PACKAGE AND METHOD OF FORMING A CHIP PACKAGE WITH A METAL CONT...

IGBT Having a Barrier Region

POWER SEMICONDUCTOR DEVICE WITH DV/DT CONTROLLABILITY

Method for Producing IGBT with dV/dt Controllability

IGBT with dV/dt Controllability

IGBT with dV/dt Controllability

POWER SEMICONDUCTOR DEVICE WITH DV/DT CONTROLLABILITY

Bipolar Transistor Device With an Emitter Having Two Types of Emitt...

CHIP PACKAGE, METHOD OF FORMING A CHIP PACKAGE AND METHOD OF FORMIN...

Power Semiconductor Transistor Having Increased Bipolar Amplification

Bipolar Transistor Device With an Emitter Having Two Types of Emitt...

Semiconductor Device with Auxiliary Structure Including Deep Level...

MOS-Transistor with Separated Electrodes Arranged in a Trench

TRENCH TRANSISTOR DEVICE

Method of Manufacturing an Insulated Gate Bipolar Transistor with M...

Semiconductor Device and Insulated Gate Bipolar Transistor with Bar...

Insulated Gate Bipolar Transistor with Mesa Sections Between Cell T...