Aritra DASGUPTA

Person

Wappingers Falls, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Multiple nanosecond laser pulse anneal processes and resultant semi...
- Patent number 11,201,061
- Issue date Dec 14, 2021
- International Business Machines Corporation
- Aritra Dasgupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multiple nanosecond laser pulse anneal processes and resultant semi...
- Patent number 10,553,439
- Issue date Feb 4, 2020
- International Business Machines Corporation
- Aritra Dasgupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structures with thinned dielectric material
- Patent number 10,361,132
- Issue date Jul 23, 2019
- GLOBALFOUNDRIES Inc.
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal resistor forming method using ion implantation
- Patent number 10,263,065
- Issue date Apr 16, 2019
- GLOBALFOUNDRIES Inc.
- Domingo A. Ferrer Luppi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate stack formed with interrupted deposition processes and laser a...
- Patent number 9,997,361
- Issue date Jun 12, 2018
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate stack formed with interrupted deposition processes and laser a...
- Patent number 9,997,610
- Issue date Jun 12, 2018
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench metal insulator metal capacitor with oxygen gettering layer
- Patent number 9,911,597
- Issue date Mar 6, 2018
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multiple nanosecond laser pulse anneal processes and resultant semi...
- Patent number 9,859,121
- Issue date Jan 2, 2018
- International Business Machines Corporation
- Aritra Dasgupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate stack for integrated circuit structure and method of forming same
- Patent number 9,748,235
- Issue date Aug 29, 2017
- GLOBALFOUNDRIES Inc.
- Aritra Dasgupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench metal-insulator-metal capacitor with oxygen gettering layer
- Patent number 9,653,534
- Issue date May 16, 2017
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate stack formed with interrupted deposition processes and laser a...
- Patent number 9,613,870
- Issue date Apr 4, 2017
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate stack formed with interrupted deposition processes and laser a...
- Patent number 9,613,866
- Issue date Apr 4, 2017
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of finFET junction
- Patent number 9,431,485
- Issue date Aug 30, 2016
- GLOBALFOUNDRIES, INC.
- Shafaat Ahmed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-layer work function metal replacement gate
- Patent number 8,659,077
- Issue date Feb 25, 2014
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-layer work function metal replacement gate
- Patent number 8,647,972
- Issue date Feb 11, 2014
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MULTIPLE NANOSECOND LASER PULSE ANNEAL PROCESSES AND RESULTANT SEMI...
- Publication number 20190385857
- Publication date Dec 19, 2019
- International Business Machines Corporation
- Aritra DASGUPTA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTIPLE NANOSECOND LASER PULSE ANNEAL PROCESSES AND RESULTANT SEMI...
- Publication number 20180090328
- Publication date Mar 29, 2018
- International Business Machines Corporation
- Aritra DASGUPTA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH METAL INSULATOR METAL CAPACITOR WITH OXYGEN GETTERING LAYER
- Publication number 20170250073
- Publication date Aug 31, 2017
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE STACK FOR INTEGRATED CIRCUIT STRUCTURE AND METHOD OF FORMING SAME
- Publication number 20170221889
- Publication date Aug 3, 2017
- GLOBALFOUNDRIES INC.
- Aritra Dasgupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURES WITH THINNED DIELECTRIC MATERIAL
- Publication number 20170207134
- Publication date Jul 20, 2017
- GLOBALFOUNDRIES INC.
- Ruqiang BAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE STACK FORMED WITH INTERRUPTED DEPOSITION PROCESSES AND LASER A...
- Publication number 20170140940
- Publication date May 18, 2017
- International Business Machines Corporation
- Takashi ANDO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE STACK FORMED WITH INTERRUPTED DEPOSITION PROCESSES AND LASER A...
- Publication number 20170133477
- Publication date May 11, 2017
- International Business Machines Corporation
- Takashi ANDO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL RESISTOR FORMING METHOD USING ION IMPLANTATION
- Publication number 20170125509
- Publication date May 4, 2017
- GLOBALFOUNDRIES INC.
- Domingo A. Ferrer Luppi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURES WITH THINNED DIELECTRIC MATERIAL
- Publication number 20170110376
- Publication date Apr 20, 2017
- GLOBALFOUNDRIES INC.
- Ruqiang BAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE STACK FORMED WITH INTERRUPTED DEPOSITION PROCESSES AND LASER A...
- Publication number 20170005006
- Publication date Jan 5, 2017
- International Business Machines Corporation
- Takashi ANDO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE STACK FORMED WITH INTERRUPTED DEPOSITION PROCESSES AND LASER A...
- Publication number 20170005003
- Publication date Jan 5, 2017
- International Business Machines Corporation
- Takashi ANDO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTIPLE NANOSECOND LASER PULSE ANNEAL PROCESSES AND RESULTANT SEMI...
- Publication number 20160379830
- Publication date Dec 29, 2016
- International Business Machines Corporation
- Aritra DASGUPTA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND STRUCTURE FOR FORMATION OF REPLACEMENT METAL GATE FIELD...
- Publication number 20160351453
- Publication date Dec 1, 2016
- GLOBALFOUNDRIES INC.
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH METAL-INSULATOR-METAL CAPACITOR WITH OXYGEN GETTERING LAYER
- Publication number 20160181353
- Publication date Jun 23, 2016
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMATION OF FINFET JUNCTION
- Publication number 20160181367
- Publication date Jun 23, 2016
- International Business Machines Corporation
- Shafaat Ahmed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-LAYER WORK FUNCTION METAL REPLACEMENT GATE
- Publication number 20140070307
- Publication date Mar 13, 2014
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS

Aritra DASGUPTA

Person

Patents Grantslast 30 patents

Multiple nanosecond laser pulse anneal processes and resultant semi...

Multiple nanosecond laser pulse anneal processes and resultant semi...

Structures with thinned dielectric material

Metal resistor forming method using ion implantation

Gate stack formed with interrupted deposition processes and laser a...

Gate stack formed with interrupted deposition processes and laser a...

Trench metal insulator metal capacitor with oxygen gettering layer

Multiple nanosecond laser pulse anneal processes and resultant semi...

Gate stack for integrated circuit structure and method of forming same

Trench metal-insulator-metal capacitor with oxygen gettering layer

Gate stack formed with interrupted deposition processes and laser a...

Gate stack formed with interrupted deposition processes and laser a...

Formation of finFET junction

Multi-layer work function metal replacement gate

Multi-layer work function metal replacement gate

Patents Applicationslast 30 patents

MULTIPLE NANOSECOND LASER PULSE ANNEAL PROCESSES AND RESULTANT SEMI...

MULTIPLE NANOSECOND LASER PULSE ANNEAL PROCESSES AND RESULTANT SEMI...

TRENCH METAL INSULATOR METAL CAPACITOR WITH OXYGEN GETTERING LAYER

GATE STACK FOR INTEGRATED CIRCUIT STRUCTURE AND METHOD OF FORMING SAME

STRUCTURES WITH THINNED DIELECTRIC MATERIAL

GATE STACK FORMED WITH INTERRUPTED DEPOSITION PROCESSES AND LASER A...

GATE STACK FORMED WITH INTERRUPTED DEPOSITION PROCESSES AND LASER A...

METAL RESISTOR FORMING METHOD USING ION IMPLANTATION

STRUCTURES WITH THINNED DIELECTRIC MATERIAL

GATE STACK FORMED WITH INTERRUPTED DEPOSITION PROCESSES AND LASER A...

GATE STACK FORMED WITH INTERRUPTED DEPOSITION PROCESSES AND LASER A...

MULTIPLE NANOSECOND LASER PULSE ANNEAL PROCESSES AND RESULTANT SEMI...

METHOD AND STRUCTURE FOR FORMATION OF REPLACEMENT METAL GATE FIELD...

TRENCH METAL-INSULATOR-METAL CAPACITOR WITH OXYGEN GETTERING LAYER

FORMATION OF FINFET JUNCTION

MULTI-LAYER WORK FUNCTION METAL REPLACEMENT GATE