Armin Willmeroth

Person

Friedberg, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Power semiconductor device having vertically parallel p-n layers fo...
- Patent number 12,119,376
- Issue date Oct 15, 2024
- Infineon Technologies Austria AG
- Armin Willmeroth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Half-bridge circuit including integrated level shifter transistor
- Patent number 12,002,804
- Issue date Jun 4, 2024
- Infineon Technologies Austria AG
- Armin Willmeroth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a transistor device having a superjunction str...
- Patent number 11,527,608
- Issue date Dec 13, 2022
- Infineon Technologies Dresden GmbH & Co. KG
- Franz Hirler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a superjunction semiconductor device
- Patent number 11,329,126
- Issue date May 10, 2022
- Infineon Technologies Austria AG
- Armin Tilke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of producing the same
- Patent number 11,309,434
- Issue date Apr 19, 2022
- Infineon Technologies Dresden GmbH & Co. KG
- Ahmed Mahmoud
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a superjunction transistor device
- Patent number 10,971,582
- Issue date Apr 6, 2021
- Infineon Technologies Dresden GmbH & Co. KG
- Franz Hirler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power converter circuit having a controller for generating a drive...
- Patent number 10,950,691
- Issue date Mar 16, 2021
- Infineon Technologies Austria AG
- Giulio Fragiacomo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Half-bridge circuit including a low-side transistor and a level shi...
- Patent number 10,833,066
- Issue date Nov 10, 2020
- Infineon Technologies Austria AG
- Armin Willmeroth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and methods for forming semiconductor devices
- Patent number 10,516,065
- Issue date Dec 24, 2019
- Infineon Technologies AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Charge-compensation semiconductor device and a manufacturing method...
- Patent number 10,490,656
- Issue date Nov 26, 2019
- Infineon Technologies Austria AG
- Armin Willmeroth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor device with high avalanche robustness
- Patent number 10,475,880
- Issue date Nov 12, 2019
- Infineon Technologies Austria AG
- Giulio Fragiacomo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
VDMOS having a drift zone with a compensation structure
- Patent number 10,468,479
- Issue date Nov 5, 2019
- Infineon Technologies Austria AG
- Armin Willmeroth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor having a lightly doped drift and buffer layer
- Patent number RE47710
- Issue date Nov 5, 2019
- Infineon Technologies Austria AG
- Markus Zundel
Information Patent Grant
Semiconductor devices and methods for forming a semiconductor device
- Patent number 10,276,655
- Issue date Apr 30, 2019
- Infineon Technologies Austria AG
- Armin Willmeroth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor device with increased gate-drain capacitance
- Patent number 10,128,367
- Issue date Nov 13, 2018
- Infineon Technologies Austria AG
- Armin Willmeroth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including an edge construction with straight s...
- Patent number 10,014,367
- Issue date Jul 3, 2018
- Infineon Technologies Austria AG
- Armin Willmeroth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device arrangement with a first semiconductor device...
- Patent number 9,972,619
- Issue date May 15, 2018
- Infineon Technologies Austria AG
- Rolf Weis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect semiconductor device having pillar regions of differen...
- Patent number 9,947,741
- Issue date Apr 17, 2018
- Infineon Technologies Austria AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 9,899,510
- Issue date Feb 20, 2018
- Infineon Technologies Austria AG
- Winfried Kaindl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Super junction semiconductor device with field extension zones
- Patent number 9,825,127
- Issue date Nov 21, 2017
- Infineon Technologies Austria AG
- Armin Willmeroth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Super junction semiconductor device having columnar super junction...
- Patent number 9,722,020
- Issue date Aug 1, 2017
- Infineon Technologies Austria AG
- Armin Willmeroth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench transistor having a doped semiconductor region
- Patent number 9,711,621
- Issue date Jul 18, 2017
- Infineon Technologies AG
- Franz Hirler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having switchable regions with different trans...
- Patent number 9,679,895
- Issue date Jun 13, 2017
- Infineon Technologies Austria AG
- Christian Fachmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Super junction semiconductor device having strip structures in a ce...
- Patent number 9,627,471
- Issue date Apr 18, 2017
- Infineon Technologies Austria AG
- Franz Hirler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Super junction semiconductor device having a compensation structure
- Patent number 9,570,596
- Issue date Feb 14, 2017
- Infineon Technologies Austria AG
- Stefan Gamerith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect semiconductor device having alternating n-type and p-t...
- Patent number 9,570,607
- Issue date Feb 14, 2017
- Infineon Technologies Austria AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor arrangement with active drift zone
- Patent number 9,530,764
- Issue date Dec 27, 2016
- Infineon Technologies Dresden GmbH
- Rolf Weis
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Semiconductor device
- Patent number 9,524,966
- Issue date Dec 20, 2016
- Infineon Technologies Austria AG
- Winfried Kaindl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Super junction semiconductor device with a nominal breakdown voltag...
- Patent number 9,515,137
- Issue date Dec 6, 2016
- Infineon Technologies Austria AG
- Armin Willmeroth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a super junction semiconductor device having stri...
- Patent number 9,484,400
- Issue date Nov 1, 2016
- Infineon Technologies Austria AG
- Armin Willmeroth
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Semiconductor Device with Compensation Structure
- Publication number 20240413198
- Publication date Dec 12, 2024
- Infineon Technologies Austria AG
- Armin Willmeroth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HALF-BRIDGE CIRCUIT INCLUDING INTEGRATED LEVEL SHIFTER TRANSISTOR
- Publication number 20210020626
- Publication date Jan 21, 2021
- Armin Willmeroth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method of Producing the Same
- Publication number 20200295202
- Publication date Sep 17, 2020
- Infineon Technologies Dresden GmbH & Co. KG
- Ahmed Mahmoud
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Forming a Superjunction Transistor Device
- Publication number 20200044019
- Publication date Feb 6, 2020
- Infineon Technologies Dresden GmbH & Co. KG
- Franz Hirler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Converter Circuit Having a Controller for Generating a Drive...
- Publication number 20200044020
- Publication date Feb 6, 2020
- Giulio Fragiacomo
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Application
Semiconductor Device with Compensation Structure
- Publication number 20200027949
- Publication date Jan 23, 2020
- Armin Willmeroth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Charge-Compensation Semiconductor Device and a Manufacturing Method...
- Publication number 20190019887
- Publication date Jan 17, 2019
- Infineon Technologies Austria AG
- Armin Willmeroth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Manufacturing a Superjunction Semiconductor Device
- Publication number 20180374919
- Publication date Dec 27, 2018
- Infineon Technologies Austria AG
- Armin Tilke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistor Device with High Avalanche Robustness
- Publication number 20180061938
- Publication date Mar 1, 2018
- Infineon Technologies Austria AG
- Giulio Fragiacomo
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Application
Semiconductor Devices, Electrical Devices and Methods for Forming a...
- Publication number 20180033886
- Publication date Feb 1, 2018
- Infineon Technologies Austria AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Devices and Methods for Forming Semiconductor Devices
- Publication number 20180013013
- Publication date Jan 11, 2018
- INFINEON TECHNOLOGIES AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Devices and Methods for Forming a Semiconductor Device
- Publication number 20170345893
- Publication date Nov 30, 2017
- Infineon Technologies Austria AG
- Armin Willmeroth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Including an Edge Construction with Straight S...
- Publication number 20170200791
- Publication date Jul 13, 2017
- Infineon Technologies Austria AG
- Armin Willmeroth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistor Device with Increased Gate-Drain Capacitance
- Publication number 20170154992
- Publication date Jun 1, 2017
- Infineon Technologies Austria AG
- Armin Willmeroth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field-Effect Semiconductor Device Having Pillar Regions of Differen...
- Publication number 20170148872
- Publication date May 25, 2017
- Infineon Technologies Austria AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20170062605
- Publication date Mar 2, 2017
- Infineon Technologies Austria AG
- Winfried Kaindl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE ARRANGEMENT WITH A FIRST SEMICONDUCTOR DEVICE...
- Publication number 20160372466
- Publication date Dec 22, 2016
- Infineon Technologies Austria AG
- Rolf Weis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Super Junction Semiconductor Device Having Columnar Super Junction...
- Publication number 20160268370
- Publication date Sep 15, 2016
- Infineon Technologies Austria AG
- Armin Willmeroth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with a Super Junction Structure and a Field Ex...
- Publication number 20160218174
- Publication date Jul 28, 2016
- Infineon Technologies Austria AG
- Armin Willmeroth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Having Switchable Regions with Different Trans...
- Publication number 20160190125
- Publication date Jun 30, 2016
- Infineon Technologies Austria AG
- Christian Fachmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Forming a Super Junction Semiconductor Device Having Stri...
- Publication number 20160104768
- Publication date Apr 14, 2016
- Infineon Technologies Austria AG
- Armin Willmeroth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field-Effect Semiconductor Device Having Alternating N-Type and P-T...
- Publication number 20160064554
- Publication date Mar 3, 2016
- Infineon Technologies Austria AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Charge Compensation Structure and Manufacturing Therefor
- Publication number 20150380542
- Publication date Dec 31, 2015
- Infineon Technologies Austria AG
- Joachim Weyers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Switching Devices with Different Local Transconductance
- Publication number 20150372087
- Publication date Dec 24, 2015
- Infineon Technologies Austria AG
- Christian Fachmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH COMPENSATION STRUCTURE
- Publication number 20150333169
- Publication date Nov 19, 2015
- Infineon Technologies Austria AG
- Armin Willmeroth
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Application
Super Junction Semiconductor Device having Strip Structures in a Ce...
- Publication number 20150325641
- Publication date Nov 12, 2015
- Infineon Technologies Austria AG
- Franz Hirler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Arrangement with a First Semiconductor Device...
- Publication number 20150243645
- Publication date Aug 27, 2015
- Infineon Technologies Austria AG
- Rolf Weis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Super Junction Semiconductor Device having a Compensation Structure
- Publication number 20150214348
- Publication date Jul 30, 2015
- Infineon Technologies Austria AG
- Stefan Gamerith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPER JUNCTION SEMICONDUCTOR DEVICE HAVING COLUMNAR SUPER JUNCTION...
- Publication number 20150145038
- Publication date May 28, 2015
- Infineon Technologies Austria AG
- Armin Willmeroth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device
- Publication number 20150115354
- Publication date Apr 30, 2015
- Infineon Technologies Austria AG
- Winfried Kaindl
- H01 - BASIC ELECTRIC ELEMENTS

Armin Willmeroth

Person

Patents Grantslast 30 patents

Power semiconductor device having vertically parallel p-n layers fo...

Half-bridge circuit including integrated level shifter transistor

Method for producing a transistor device having a superjunction str...

Method of manufacturing a superjunction semiconductor device

Semiconductor device and method of producing the same

Method for forming a superjunction transistor device

Power converter circuit having a controller for generating a drive...

Half-bridge circuit including a low-side transistor and a level shi...

Semiconductor devices and methods for forming semiconductor devices

Charge-compensation semiconductor device and a manufacturing method...

Transistor device with high avalanche robustness

VDMOS having a drift zone with a compensation structure

Power semiconductor having a lightly doped drift and buffer layer

Semiconductor devices and methods for forming a semiconductor device

Transistor device with increased gate-drain capacitance

Semiconductor device including an edge construction with straight s...

Semiconductor device arrangement with a first semiconductor device...

Field-effect semiconductor device having pillar regions of differen...

Semiconductor device

Super junction semiconductor device with field extension zones

Super junction semiconductor device having columnar super junction...

Trench transistor having a doped semiconductor region

Semiconductor device having switchable regions with different trans...

Super junction semiconductor device having strip structures in a ce...

Super junction semiconductor device having a compensation structure

Field-effect semiconductor device having alternating n-type and p-t...

Semiconductor arrangement with active drift zone

Semiconductor device

Super junction semiconductor device with a nominal breakdown voltag...

Method of forming a super junction semiconductor device having stri...

Patents Applicationslast 30 patents

Semiconductor Device with Compensation Structure

HALF-BRIDGE CIRCUIT INCLUDING INTEGRATED LEVEL SHIFTER TRANSISTOR

Semiconductor Device and Method of Producing the Same

Method for Forming a Superjunction Transistor Device

Power Converter Circuit Having a Controller for Generating a Drive...

Semiconductor Device with Compensation Structure

Charge-Compensation Semiconductor Device and a Manufacturing Method...

Method of Manufacturing a Superjunction Semiconductor Device

Transistor Device with High Avalanche Robustness

Semiconductor Devices, Electrical Devices and Methods for Forming a...

Semiconductor Devices and Methods for Forming Semiconductor Devices

Semiconductor Devices and Methods for Forming a Semiconductor Device

Semiconductor Device Including an Edge Construction with Straight S...

Transistor Device with Increased Gate-Drain Capacitance

Field-Effect Semiconductor Device Having Pillar Regions of Differen...

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE ARRANGEMENT WITH A FIRST SEMICONDUCTOR DEVICE...

Super Junction Semiconductor Device Having Columnar Super Junction...

Semiconductor Device with a Super Junction Structure and a Field Ex...

Semiconductor Device Having Switchable Regions with Different Trans...

Method of Forming a Super Junction Semiconductor Device Having Stri...

Field-Effect Semiconductor Device Having Alternating N-Type and P-T...

Charge Compensation Structure and Manufacturing Therefor

Semiconductor Switching Devices with Different Local Transconductance

SEMICONDUCTOR DEVICE WITH COMPENSATION STRUCTURE

Super Junction Semiconductor Device having Strip Structures in a Ce...

Semiconductor Device Arrangement with a First Semiconductor Device...

Super Junction Semiconductor Device having a Compensation Structure

SUPER JUNCTION SEMICONDUCTOR DEVICE HAVING COLUMNAR SUPER JUNCTION...

Semiconductor Device