Arnaud YVON

Person

Saint-Cyr sur Loire, FR

People

Patents Grantslast 30 patents

Information Patent Grant
Thin diodes
- Patent number 11,949,023
- Issue date Apr 2, 2024
- STMicroelectronics (Tours) SAS
- Arnaud Yvon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic circuit comprising diodes
- Patent number 11,830,873
- Issue date Nov 28, 2023
- STMicroelectronics (Tours) SAS
- Arnaud Yvon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monolithic component comprising a gallium nitride power transistor
- Patent number 11,810,911
- Issue date Nov 7, 2023
- STMicroelectronics Application GmbH
- Mathieu Rouviere
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for treating a gallium nitride layer comprising dislocations
- Patent number 9,991,341
- Issue date Jun 5, 2018
- STMicroelectronics (Tours) SAS
- Arnaud Yvon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-voltage gallium nitride schottky diode
- Patent number 9,735,292
- Issue date Aug 15, 2017
- STMicroelectronics (Tours) SAS
- Arnaud Yvon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for treating a gallium nitride layer comprising dislocations
- Patent number 9,536,747
- Issue date Jan 3, 2017
- STMicroelectronics (Tours) SAS
- Arnaud Yvon
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
RECESSED GATE HEMT PROCESSING WITH REVERSED ETCHING
- Publication number 20250081494
- Publication date Mar 6, 2025
- STMicroelectronics International N.V.
- Arnaud YVON
Information Patent Application
THIN DIODES
- Publication number 20240204112
- Publication date Jun 20, 2024
- STMicroelectronics (Tours) SAS
- Arnaud YVON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MONOLITHIC COMPONENT COMPRISING A GALLIUM NITRIDE POWER TRANSISTOR
- Publication number 20240021604
- Publication date Jan 18, 2024
- STMicroelectronics Application GmbH
- Mathieu ROUVIERE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THIN DIODES
- Publication number 20220209024
- Publication date Jun 30, 2022
- STMicroelectronics (Tours) SAS
- Arnaud YVON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MONOLITHIC COMPONENT COMPRISING A GALLIUM NITRIDE POWER TRANSISTOR
- Publication number 20200402975
- Publication date Dec 24, 2020
- STMICROELECTRONICS GMBH
- Mathieu ROUVIERE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC CIRCUIT COMPRISING DIODES
- Publication number 20200105749
- Publication date Apr 2, 2020
- STMicroelectronics (Tours) SAS
- Arnaud YVON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR TREATING A GALLIUM NITRIDE LAYER COMPRISING DISLOCATIONS
- Publication number 20170077225
- Publication date Mar 16, 2017
- STMicroelectronics (Tours) SAS
- Arnaud YVON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-VOLTAGE GALLIUM NITRIDE SCHOTTKY DIODE
- Publication number 20170062625
- Publication date Mar 2, 2017
- STMicroelectronics (Tours) SAS
- Arnaud YVON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL GALLIUM NITRIDE SCHOTTKY DIODE
- Publication number 20150221782
- Publication date Aug 6, 2015
- STMicroelectronics (Tours) SAS
- Arnaud YVON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR TREATING A GALLIUM NITRIDE LAYER COMPRISING DISLOCATIONS
- Publication number 20150064881
- Publication date Mar 5, 2015
- STMicroelectronics (Tours) SAS
- Arnaud YVON
- H01 - BASIC ELECTRIC ELEMENTS

Arnaud YVON

Person

Patents Grantslast 30 patents

Thin diodes

Electronic circuit comprising diodes

Monolithic component comprising a gallium nitride power transistor

Method for treating a gallium nitride layer comprising dislocations

High-voltage gallium nitride schottky diode

Method for treating a gallium nitride layer comprising dislocations

Patents Applicationslast 30 patents

RECESSED GATE HEMT PROCESSING WITH REVERSED ETCHING

THIN DIODES

MONOLITHIC COMPONENT COMPRISING A GALLIUM NITRIDE POWER TRANSISTOR

THIN DIODES

MONOLITHIC COMPONENT COMPRISING A GALLIUM NITRIDE POWER TRANSISTOR

ELECTRONIC CIRCUIT COMPRISING DIODES

METHOD FOR TREATING A GALLIUM NITRIDE LAYER COMPRISING DISLOCATIONS

HIGH-VOLTAGE GALLIUM NITRIDE SCHOTTKY DIODE

VERTICAL GALLIUM NITRIDE SCHOTTKY DIODE

METHOD FOR TREATING A GALLIUM NITRIDE LAYER COMPRISING DISLOCATIONS