Arthur V. Pohm

Person

Ames, IA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Circuit selection of magnetic memory cells and related cell structures
- Patent number RE47583
- Issue date Aug 27, 2019
- NVE Corporation
- James M. Daughton
Information Patent Grant
Current switched magnetoresistive memory cell
- Patent number RE44878
- Issue date May 6, 2014
- NVE Corporation
- James M. Daughton
- 257 - Active solid-state devices
Information Patent Grant
Magnetic memory layers thermal pulse transitions
- Patent number 7,813,165
- Issue date Oct 12, 2010
- NVE Corporation
- James M. Daughton
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory layers thermal pulse transitions
- Patent number 7,266,013
- Issue date Sep 4, 2007
- NVE Corporation
- James M. Daughton
- G11 - INFORMATION STORAGE
Information Patent Grant
magnetic memory layers thermal pulse transitions
- Patent number 7,177,178
- Issue date Feb 13, 2007
- NVE Corporation
- James M. Daughton
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive memory SOI cell
- Patent number 7,148,531
- Issue date Dec 12, 2006
- NVE Corporation
- James M. Daughton
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory layers thermal pulse transitions
- Patent number 7,023,723
- Issue date Apr 4, 2006
- NVE Corporation
- James M. Daughton
- G11 - INFORMATION STORAGE
Information Patent Grant
Thermally operated switch control memory cell
- Patent number 6,963,098
- Issue date Nov 8, 2005
- NVE Corporation
- James M. Daughton
- G11 - INFORMATION STORAGE
Information Patent Grant
Antiparallel magnetoresistive memory cells
- Patent number 6,777,730
- Issue date Aug 17, 2004
- NVE Corporation
- James M. Daughton
- G11 - INFORMATION STORAGE
Information Patent Grant
Current switched magnetoresistive memory cell
- Patent number 6,744,086
- Issue date Jun 1, 2004
- NVE Corporation
- James M. Daughton
- G11 - INFORMATION STORAGE
Information Patent Grant
Stabilization of GMR devices
- Patent number 6,709,696
- Issue date Mar 23, 2004
- Seagate Technology LLC
- Brenda A. Everitt
- G11 - INFORMATION STORAGE
Information Patent Grant
Circuit selected joint magnetoresistive junction tunneling-giant ma...
- Patent number 6,674,664
- Issue date Jan 6, 2004
- NVE Corporation
- Arthur V. Pohm
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Circuit selection of magnetic memory cells and related cell structures
- Patent number 6,538,921
- Issue date Mar 25, 2003
- NVE Corporation
- James M. Daughton
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory coincident thermal pulse data storage
- Patent number 6,535,416
- Issue date Mar 18, 2003
- NVE Corporation
- James M. Daughton
- G11 - INFORMATION STORAGE
Information Patent Grant
Stabilization of GMR devices
- Patent number 6,455,177
- Issue date Sep 24, 2002
- Seagate Technology LLC
- Brenda A. Everitt
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Read heads in planar monolithic integrated circuit chips
- Patent number 6,404,191
- Issue date Jun 11, 2002
- NVE Corporation
- James M. Daughton
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Spin dependent tunneling memory
- Patent number 6,349,053
- Issue date Feb 19, 2002
- NVE Corporation
- James M. Daughton
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetic field sensor with a plurality of magnetoresistive thin-fil...
- Patent number 6,340,886
- Issue date Jan 22, 2002
- Nonvolatile Electronics, Incorporated
- James M. Daughton
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Spin dependent tunneling memory
- Patent number 6,275,411
- Issue date Aug 14, 2001
- Nonvolatile Electronics, Incorporated
- James M. Daughton
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Spin dependent tunneling memory
- Patent number 6,147,900
- Issue date Nov 14, 2000
- Nonvolatile Electronics, Incorporated
- Arthur V. Pohm
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Spin dependent tunneling sensor
- Patent number 6,072,382
- Issue date Jun 6, 2000
- Nonvolatile Electronics, Incorporated
- James M. Daughton
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Spin dependent tunneling memory
- Patent number 6,021,065
- Issue date Feb 1, 2000
- Nonvolatile Electronics Incorporated
- James M. Daughton
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetic field sensor with a plurality of magnetoresistive thin-fil...
- Patent number 5,969,522
- Issue date Oct 19, 1999
- James M. Daughton
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Giant magnetoresistive effect memory cell
- Patent number 5,966,322
- Issue date Oct 12, 1999
- Nonvolatile Electronics, Incorporated
- Arthur V. Pohm
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Giant magnetoresistive effect memory cell
- Patent number 5,949,707
- Issue date Sep 7, 1999
- Nonvolatile Electronics, Incorporated
- Arthur V. Pohm
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetoresistive memory using large fraction of memory cell films f...
- Patent number 5,892,708
- Issue date Apr 6, 1999
- Nonvolatile Electronics, Incorporated
- Arthur V. Pohm
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive memory using large fractions of memory cell films...
- Patent number 5,768,180
- Issue date Jun 16, 1998
- Nonvolatile Electronics, Incorporated
- Arthur V. Pohm
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive memory using large fractions of memory cell films...
- Patent number 5,636,159
- Issue date Jun 3, 1997
- Nonvolatile Electronics, Incorporated
- Arthur V. Pohm
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for forming offset magnetoresistive memory structures
- Patent number 5,424,236
- Issue date Jun 13, 1995
- Nonvolatile Electronics, Incorporated
- James M. Daughton
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method for sensing data in a magnetoresistive memory using large fr...
- Patent number 5,420,819
- Issue date May 30, 1995
- Nonvolatile Electronics, Incorporated
- Arthur V. Pohm
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
High Dielectric, Non-Linear Capacitor
- Publication number 20080002329
- Publication date Jan 3, 2008
- Arthur V. Pohm
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
Magnetic memory layers thermal pulse transitions
- Publication number 20070268743
- Publication date Nov 22, 2007
- NVE Corporation
- James M. Daughton
- G11 - INFORMATION STORAGE
Information Patent Application
High Dielectric, Non-Linear Nano-Capacitor
- Publication number 20070206342
- Publication date Sep 6, 2007
- Andrew L. Tipton
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
Magnetic memory layers thermal pulse transitions
- Publication number 20070109842
- Publication date May 17, 2007
- NVE Corporation
- James M. Daughton
- G11 - INFORMATION STORAGE
Information Patent Application
Nano-Reflectors for Thin, Flat Display Devices
- Publication number 20060291278
- Publication date Dec 28, 2006
- NANO-ELECTROCHEM, INC.
- Andrew Tipton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Magnetic memory layers thermal pulse transitions
- Publication number 20060083056
- Publication date Apr 20, 2006
- NVE Corporation
- James M. Daughton
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetoresistive memory SOI cell
- Publication number 20050242382
- Publication date Nov 3, 2005
- NVE Corporation
- James M. Daughton
- G11 - INFORMATION STORAGE
Information Patent Application
Thermally operated switch control memory cell
- Publication number 20050002267
- Publication date Jan 6, 2005
- NVE Corporation
- James M. Daughton
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetic memory layers thermal pulse transitions
- Publication number 20040125673
- Publication date Jul 1, 2004
- NVE Corporation
- James M. Daughton
- G11 - INFORMATION STORAGE
Information Patent Application
Antiparallel magnetoresistive memory cells
- Publication number 20030048676
- Publication date Mar 13, 2003
- NVE Corporation
- James M. Daughton
- B82 - NANO-TECHNOLOGY
Information Patent Application
Current switched magnetoresistive memory cell
- Publication number 20030007398
- Publication date Jan 9, 2003
- NVE Corporation
- James M. Daughton
- B82 - NANO-TECHNOLOGY
Information Patent Application
Circuit selected joint magnetoresistive junction tunneling-giant ma...
- Publication number 20020171100
- Publication date Nov 21, 2002
- NVE Corporation
- Arthur V. Pohm
- B82 - NANO-TECHNOLOGY
Information Patent Application
Stabilization of GMR devices
- Publication number 20020150675
- Publication date Oct 17, 2002
- Brenda A. Everitt
- B82 - NANO-TECHNOLOGY
Information Patent Application
Circuit selection of magnetic memory cells and related cell structures
- Publication number 20020036919
- Publication date Mar 28, 2002
- James M. Daughton
- B82 - NANO-TECHNOLOGY
Information Patent Application
Read heads in planar monolithic integrated circuit chips
- Publication number 20010017543
- Publication date Aug 30, 2001
- NVE Corporation
- James M. Daughton
- B82 - NANO-TECHNOLOGY

Arthur V. Pohm

Person

Patents Grantslast 30 patents

Circuit selection of magnetic memory cells and related cell structures

Current switched magnetoresistive memory cell

Magnetic memory layers thermal pulse transitions

Magnetic memory layers thermal pulse transitions

magnetic memory layers thermal pulse transitions

Magnetoresistive memory SOI cell

Magnetic memory layers thermal pulse transitions

Thermally operated switch control memory cell

Antiparallel magnetoresistive memory cells

Current switched magnetoresistive memory cell

Stabilization of GMR devices

Circuit selected joint magnetoresistive junction tunneling-giant ma...

Circuit selection of magnetic memory cells and related cell structures

Magnetic memory coincident thermal pulse data storage

Stabilization of GMR devices

Read heads in planar monolithic integrated circuit chips

Spin dependent tunneling memory

Magnetic field sensor with a plurality of magnetoresistive thin-fil...

Spin dependent tunneling memory

Spin dependent tunneling memory

Spin dependent tunneling sensor

Spin dependent tunneling memory

Magnetic field sensor with a plurality of magnetoresistive thin-fil...

Giant magnetoresistive effect memory cell

Giant magnetoresistive effect memory cell

Magnetoresistive memory using large fraction of memory cell films f...

Magnetoresistive memory using large fractions of memory cell films...

Magnetoresistive memory using large fractions of memory cell films...

Method for forming offset magnetoresistive memory structures

Method for sensing data in a magnetoresistive memory using large fr...

Patents Applicationslast 30 patents

High Dielectric, Non-Linear Capacitor

Magnetic memory layers thermal pulse transitions

High Dielectric, Non-Linear Nano-Capacitor

Magnetic memory layers thermal pulse transitions

Nano-Reflectors for Thin, Flat Display Devices

Magnetic memory layers thermal pulse transitions

Magnetoresistive memory SOI cell

Thermally operated switch control memory cell

Magnetic memory layers thermal pulse transitions

Antiparallel magnetoresistive memory cells

Current switched magnetoresistive memory cell

Circuit selected joint magnetoresistive junction tunneling-giant ma...

Stabilization of GMR devices

Circuit selection of magnetic memory cells and related cell structures

Read heads in planar monolithic integrated circuit chips