Arun Madan

Person

Birmingham, MI, US

People

Patents Grantslast 30 patents

Information Patent Grant
Fluorinated precursors from which to fabricate amorphous semiconduc...
- Patent number 4,839,312
- Issue date Jun 13, 1989
- Energy Conversion Devices, Inc.
- Stanford R. Ovshinsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wide band gap semiconductor alloy material
- Patent number 4,710,786
- Issue date Dec 1, 1987
- Stanford R. Ovshinsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Photodetection and current control devices
- Patent number 4,703,336
- Issue date Oct 27, 1987
- Energy Conversion Devices, Inc.
- Stanford R. Ovshinsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Amorphous semiconductors equivalent to crystalline semiconductors
- Patent number 4,520,380
- Issue date May 28, 1985
- Sovonics Solar Systems
- Stanford R. Ovshinsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
P-type semiconductor material having a wide band gap
- Patent number 4,469,715
- Issue date Sep 4, 1984
- Energy Conversion Devices, Inc.
- Arun Madan
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
P-Type semiconductor material having a wide band gap
- Patent number 4,441,113
- Issue date Apr 3, 1984
- Energy Conversion Devices, Inc.
- Arun Madan
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Amorphous semiconductors equivalent to crystalline semiconductors
- Patent number 4,409,605
- Issue date Oct 11, 1983
- Energy Conversion Devices, Inc.
- Stanford R. Ovshinsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Current enhanced photovoltaic device
- Patent number 4,379,943
- Issue date Apr 12, 1983
- Energy Conversion Devices, Inc.
- Chi C. Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Amorphous semiconductors equivalent to crystalline semiconductors p...
- Patent number 4,226,898
- Issue date Oct 7, 1980
- Energy Conversion Devices, Inc.
- Stanford R. Ovshinsky
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Person

Patents Grantslast 30 patents

Fluorinated precursors from which to fabricate amorphous semiconduc...

Wide band gap semiconductor alloy material

Photodetection and current control devices

Amorphous semiconductors equivalent to crystalline semiconductors

P-type semiconductor material having a wide band gap

P-Type semiconductor material having a wide band gap

Amorphous semiconductors equivalent to crystalline semiconductors

Current enhanced photovoltaic device

Amorphous semiconductors equivalent to crystalline semiconductors p...