Aryadeep Mrinal

Person

New Taipei, TW

People

Patents Grantslast 30 patents

Information Patent Grant
High voltage edge termination structure for power semiconductor dev...
- Patent number 12,199,153
- Issue date Jan 14, 2025
- TAIWAN SEMICONDUCTOR CO., LTD.
- Hamza Yilmaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage edge termination structure for power semiconductor dev...
- Patent number 12,154,955
- Issue date Nov 26, 2024
- Taiwan Semiconductor Co., Ltd.
- Hamza Yilmaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage edge termination structure for power semiconductor dev...
- Patent number 12,087,831
- Issue date Sep 10, 2024
- Taiwan Semiconductor Co., Ltd.
- Hamza Yilmaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor having electrode coated sequentially by oxi...
- Patent number 9,960,244
- Issue date May 1, 2018
- Taiwan Semiconductor Co., Ltd.
- Yi-Lung Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor having a multi-width electrode structure an...
- Patent number 9,905,690
- Issue date Feb 27, 2018
- Taiwan Semiconductor Co., Ltd.
- Yi-Lung Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor having electrode coated sequentially by oxi...
- Patent number 9,799,742
- Issue date Oct 24, 2017
- Taiwan Semiconductor Co., Ltd.
- Yi-Lung Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing field effect transistor having widened trench
- Patent number 9,741,825
- Issue date Aug 22, 2017
- Taiwan Semiconductor Co., Ltd.
- Yi-Lung Tsai
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
HIGH VOLTAGE EDGE TERMINATION STRUCTURE FOR POWER SEMICONDUCTOR DEV...
- Publication number 20230108668
- Publication date Apr 6, 2023
- TAIWAN SEMICONDUCTOR CO., LTD.
- Hamza YILMAZ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE EDGE TERMINATION STRUCTURE FOR POWER SEMICONDUCTOR DEV...
- Publication number 20230104778
- Publication date Apr 6, 2023
- TAIWAN SEMICONDUCTOR CO., LTD.
- Hamza YILMAZ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE EDGE TERMINATION STRUCTURE FOR POWER SEMICONDUCTOR DEV...
- Publication number 20230103304
- Publication date Apr 6, 2023
- TAIWAN SEMICONDUCTOR CO., LTD.
- Hamza YILMAZ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE EDGE TERMINATION STRUCTURE FOR POWER SEMICONDCUTOR DEV...
- Publication number 20220157951
- Publication date May 19, 2022
- TAIWAN SEMICONDUCTOR CO., LTD.
- Hamza YILMAZ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR HAVING ELECTRODE COATED SEQUENTIALLY BY OXI...
- Publication number 20180090580
- Publication date Mar 29, 2018
- TAIWAN SEMICONDUCTOR CO., LTD.
- Yi-Lung TSAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR HAVING A MULTI-WIDTH ELECTRODE STRUCTURE AN...
- Publication number 20180053849
- Publication date Feb 22, 2018
- TAIWAN SEMICONDUCTOR CO., LTD.
- Yi-Lung TSAI
- H01 - BASIC ELECTRIC ELEMENTS

Aryadeep Mrinal

Person

Patents Grantslast 30 patents

High voltage edge termination structure for power semiconductor dev...

High voltage edge termination structure for power semiconductor dev...

High voltage edge termination structure for power semiconductor dev...

Field effect transistor having electrode coated sequentially by oxi...

Field effect transistor having a multi-width electrode structure an...

Field effect transistor having electrode coated sequentially by oxi...

Method for manufacturing field effect transistor having widened trench

Patents Applicationslast 30 patents

HIGH VOLTAGE EDGE TERMINATION STRUCTURE FOR POWER SEMICONDUCTOR DEV...

HIGH VOLTAGE EDGE TERMINATION STRUCTURE FOR POWER SEMICONDUCTOR DEV...

HIGH VOLTAGE EDGE TERMINATION STRUCTURE FOR POWER SEMICONDUCTOR DEV...

HIGH VOLTAGE EDGE TERMINATION STRUCTURE FOR POWER SEMICONDCUTOR DEV...

FIELD EFFECT TRANSISTOR HAVING ELECTRODE COATED SEQUENTIALLY BY OXI...

FIELD EFFECT TRANSISTOR HAVING A MULTI-WIDTH ELECTRODE STRUCTURE AN...