Aryan Afzalian

Person

Chastre, BE

People

Patents Grantslast 30 patents

Information Patent Grant
Dynamically doped field-effect transistor and a method for controll...
- Patent number 12,154,979
- Issue date Nov 26, 2024
- Imec VZW
- Aryan Afzalian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,894,451
- Issue date Feb 6, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Aryan Afzalian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor device
- Patent number 11,688,771
- Issue date Jun 27, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Aryan Afzalian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hetero-tunnel field-effect transistor (TFET) having a tunnel barrie...
- Patent number 11,264,452
- Issue date Mar 1, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Aryan Afzalian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor device
- Patent number 11,024,729
- Issue date Jun 1, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Aryan Afzalian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 11,018,226
- Issue date May 25, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Aryan Afzalian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating semiconductor device
- Patent number 10,896,974
- Issue date Jan 19, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Aryan Afzalian
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor device and method of fabricating the same
- Patent number 10,861,962
- Issue date Dec 8, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Aryan Afzalian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanowire FinFET Transistor
- Patent number 10,541,303
- Issue date Jan 21, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Aryan Afzalian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 10,483,380
- Issue date Nov 19, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd
- Aryan Afzalian
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor device and method of fabricating the same
- Patent number 10,475,908
- Issue date Nov 12, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd
- Aryan Afzalian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Leakage current suppression methods and related structures
- Patent number 10,276,566
- Issue date Apr 30, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Aryan Afzalian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin semiconductor device and method of manufacture with source/drai...
- Patent number 10,269,944
- Issue date Apr 23, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Blandine Duriez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanowire FinFet transistor
- Patent number 10,008,567
- Issue date Jun 26, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Aryan Afzalian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Leakage current suppression methods and related structures
- Patent number 9,818,744
- Issue date Nov 14, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Aryan Afzalian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin semiconductor device and method of manufacture with source/drai...
- Patent number 9,685,528
- Issue date Jun 20, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Blandine Duriez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistors and methods of forming same
- Patent number 9,679,968
- Issue date Jun 13, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Aryan Afzalian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanowire CMOS structure and formation methods
- Patent number 9,472,468
- Issue date Oct 18, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Mark van Dal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistors and methods of forming same
- Patent number 9,349,860
- Issue date May 24, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Aryan Afzalian
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Tunneling Enabled Feedback FET
- Publication number 20240213321
- Publication date Jun 27, 2024
- IMEC vzw
- Aryan Afzalian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240178308
- Publication date May 30, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Aryan AFZALIAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING A FET DEVICE
- Publication number 20230178635
- Publication date Jun 8, 2023
- IMEC vzw
- Aryan Afzalian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD-EFFECT TRANSISTOR DEVICE
- Publication number 20230178640
- Publication date Jun 8, 2023
- IMEC vzw
- Aryan Afzalian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DYNAMICALLY DOPED FIELD-EFFECT TRANSISTOR AND A METHOD FOR CONTROLL...
- Publication number 20220115523
- Publication date Apr 14, 2022
- IMEC vzw
- Aryan AFZALIAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20210288168
- Publication date Sep 16, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Aryan AFZALIAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20210280675
- Publication date Sep 9, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Aryan AFZALIAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20200105914
- Publication date Apr 2, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Aryan AFZALIAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING SEMICONDUCTOR DEVICE
- Publication number 20200091321
- Publication date Mar 19, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Aryan AFZALIAN
- B82 - NANO-TECHNOLOGY
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20200075749
- Publication date Mar 5, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Aryan AFZALIAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20200058738
- Publication date Feb 20, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Aryan AFZALIAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20180308960
- Publication date Oct 25, 2018
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Aryan AFZALIAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20180308959
- Publication date Oct 25, 2018
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Aryan AFZALIAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nanowire FinFET Transistor
- Publication number 20180277627
- Publication date Sep 27, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Aryan Afzalian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Leakage Current Suppression Methods and Related Structures
- Publication number 20180068999
- Publication date Mar 8, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Aryan Afzalian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE WITH SOURCE/DRAI...
- Publication number 20170278946
- Publication date Sep 28, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Blandine Duriez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field Effect Transistors and Methods of Forming Same
- Publication number 20170263709
- Publication date Sep 14, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Aryan Afzalian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OFF-STATE LEAKAGE CURRENT SUPPRESSION
- Publication number 20170186839
- Publication date Jun 29, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Aryan Afzalian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method of Manufacture
- Publication number 20170005178
- Publication date Jan 5, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Blandine Duriez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field Effect Transistors and Methods of Forming Same
- Publication number 20160293703
- Publication date Oct 6, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Aryan Afzalian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOWIRE CMOS STRUCTURE AND FORMATION METHODS
- Publication number 20160172246
- Publication date Jun 16, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Mark van Dal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LEAKAGE CURRENT SUPPRESSION METHODS AND RELATED STRUCTURES
- Publication number 20160071965
- Publication date Mar 10, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Aryan Afzalian
- H01 - BASIC ELECTRIC ELEMENTS

Aryan Afzalian

Person

Patents Grantslast 30 patents

Dynamically doped field-effect transistor and a method for controll...

Semiconductor device

Method for manufacturing semiconductor device

Hetero-tunnel field-effect transistor (TFET) having a tunnel barrie...

Method for manufacturing semiconductor device

Semiconductor device and manufacturing method thereof

Method of fabricating semiconductor device

Semiconductor device and method of fabricating the same

Nanowire FinFET Transistor

Semiconductor device and method of manufacturing the same

Semiconductor device and method of fabricating the same

Leakage current suppression methods and related structures

Fin semiconductor device and method of manufacture with source/drai...

Nanowire FinFet transistor

Leakage current suppression methods and related structures

Fin semiconductor device and method of manufacture with source/drai...

Field effect transistors and methods of forming same

Nanowire CMOS structure and formation methods

Field effect transistors and methods of forming same

Patents Applicationslast 30 patents

Tunneling Enabled Feedback FET

SEMICONDUCTOR DEVICE

METHOD FOR FORMING A FET DEVICE

FIELD-EFFECT TRANSISTOR DEVICE

DYNAMICALLY DOPED FIELD-EFFECT TRANSISTOR AND A METHOD FOR CONTROLL...

SEMICONDUCTOR DEVICE

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

METHOD OF FABRICATING SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

Nanowire FinFET Transistor

Leakage Current Suppression Methods and Related Structures

FIN SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE WITH SOURCE/DRAI...

Field Effect Transistors and Methods of Forming Same

OFF-STATE LEAKAGE CURRENT SUPPRESSION

Semiconductor Device and Method of Manufacture

Field Effect Transistors and Methods of Forming Same

NANOWIRE CMOS STRUCTURE AND FORMATION METHODS

LEAKAGE CURRENT SUPPRESSION METHODS AND RELATED STRUCTURES