Asai Makoto

Person

Ama-gun, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Light-emitting semiconductor device using group III nitrogen compound
- Patent number 7,867,800
- Issue date Jan 11, 2011
- Toyoda Gosei Co., Ltd.
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light-emitting semiconductor device using group III nitrogen compound
- Patent number 7,332,366
- Issue date Feb 19, 2008
- Toyoda Gosei Co., Ltd.
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light-emitting semiconductor device using group III nitrogen compound
- Patent number 7,138,286
- Issue date Nov 21, 2006
- Toyoda Gosei Co., Ltd.
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride compound semiconductor device and method for form...
- Patent number 7,018,915
- Issue date Mar 28, 2006
- Toyoda Gosei Co., Ltd.
- Naoki Shibata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride compound semiconductor device having a superlatti...
- Patent number 7,015,515
- Issue date Mar 21, 2006
- Toyoda Gosei Co., Ltd.
- Tetsuya Taki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light-emitting aluminum gallium indium nitride compound semiconduct...
- Patent number 7,001,790
- Issue date Feb 21, 2006
- Toyoda Gosei Co., Ltd.
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optical semiconductor device
- Patent number 6,933,169
- Issue date Aug 23, 2005
- Toyoda Gosei Co., Ltd.
- Naoki Shibata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride compound semiconductor light-emitting device
- Patent number 6,861,663
- Issue date Mar 1, 2005
- Toyoda Gosei Co., Ltd.
- Katsuhisa Sawazaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III nitride compound semiconductor element an electrode forming method
- Patent number 6,806,571
- Issue date Oct 19, 2004
- Toyoda Gosei Co., Ltd.
- Naoki Shibata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing group III nitride compound semiconductor li...
- Patent number 6,762,070
- Issue date Jul 13, 2004
- Toyoda Gosei Co., Ltd
- Naoki Kaneyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optical semiconductor device
- Patent number 6,573,114
- Issue date Jun 3, 2003
- Toyoda Gosei Co., Ltd.
- Naoki Shibata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride compound semiconductor light-emitting device havi...
- Patent number 6,452,214
- Issue date Sep 17, 2002
- Toyoda Gosei Co., Ltd.
- Naoki Kaneyama
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Light-emitting aluminum gallium indium nitride compound semiconduct...
- Patent number 6,265,726
- Issue date Jul 24, 2001
- Toyoda Gosei Co., Ltd.
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optical semiconductor device
- Patent number 6,191,436
- Issue date Feb 20, 2001
- Toyoda Gosei Co., Ltd.
- Naoki Shibata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and devices related to electrodes for p-type group III nitr...
- Patent number 6,121,127
- Issue date Sep 19, 2000
- Toyoda Gosei Co., Ltd
- Naoki Shibata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrodes for p-type group III nitride compound semiconductors
- Patent number 6,008,539
- Issue date Dec 28, 1999
- Toyoda Gosei Co., Ltd
- Naoki Shibata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light-emitting semiconductor device using group III Nitrogen compou...
- Patent number 6,005,258
- Issue date Dec 21, 1999
- Toyoda Gosei Co., Ltd.
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having group III nitride compound and enabling...
- Patent number 5,650,641
- Issue date Jul 22, 1997
- Toyoda Gosei Co., Ltd.
- Michinari Sassa
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
LIGHT-EMITTING SEMICONDUCTOR DEVICE USING GROUP III NITROGEN COMPOUND
- Publication number 20140239313
- Publication date Aug 28, 2014
- Toyoda Gosei Co., Ltd.
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LIGHT-EMITTING SEMICONDUCTOR DEVICE USING GROUP III NITROGEN COMPOUND
- Publication number 20120217510
- Publication date Aug 30, 2012
- Toyoda Gosei Co., Ltd.
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Light-emitting semiconductor device using group III nitrogen compound
- Publication number 20110101412
- Publication date May 5, 2011
- Toyoda Gosei Co., Ltd.
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Light-emitting semiconductor device using group III nitrogen compound
- Publication number 20080173880
- Publication date Jul 24, 2008
- TOYODA GOSEI
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Light-emitting diode and process for producing the same
- Publication number 20060273324
- Publication date Dec 7, 2006
- Makoto Asai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Light-emitting semiconductor device using group III nitrogen compound
- Publication number 20060118821
- Publication date Jun 8, 2006
- Toyoda Gosei Co., Ltd.
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LIght-emitting semiconductor device using group III nitrogen compound
- Publication number 20050224834
- Publication date Oct 13, 2005
- Toyoda Gosei Co., Ltd.
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Group lll nitride compound semiconductor device and method for form...
- Publication number 20040222499
- Publication date Nov 11, 2004
- Toyoda Gosei Co., Ltd.
- Naoki Shibata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for producing group III nitride compounds semiconductor
- Publication number 20040169192
- Publication date Sep 2, 2004
- Hisaki Kato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III nitride compound semiconductor element an electrode forming method
- Publication number 20030155575
- Publication date Aug 21, 2003
- Naoki Shibata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Optical semiconductor device
- Publication number 20030122251
- Publication date Jul 3, 2003
- Toyoda Gosei Co., Ltd.
- Naoki Shibata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for producing group III nitride compound semiconductor device
- Publication number 20020197827
- Publication date Dec 26, 2002
- Tetsuya Taki
- C30 - CRYSTAL GROWTH
Information Patent Application
Method of manufacturing group III nitride compound semiconductor li...
- Publication number 20020175332
- Publication date Nov 28, 2002
- Toyoda Gosei Co., Ltd.
- Naoki Kaneyama
- B82 - NANO-TECHNOLOGY
Information Patent Application
Group III nitride compound semiconductor light-emitting device
- Publication number 20020056836
- Publication date May 16, 2002
- Katsuhisa Sawazaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Group III nitride compound semiconductor light-emitting device
- Publication number 20020014632
- Publication date Feb 7, 2002
- Naoki Kaneyama
- B82 - NANO-TECHNOLOGY
Information Patent Application
Light-emitting aluminum gallium indium nitride compound semiconduct...
- Publication number 20010019849
- Publication date Sep 6, 2001
- TOTODA GOSEI CO. LTD.
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS

Asai Makoto

Person

Patents Grantslast 30 patents

Light-emitting semiconductor device using group III nitrogen compound

Light-emitting semiconductor device using group III nitrogen compound

Light-emitting semiconductor device using group III nitrogen compound

Group III nitride compound semiconductor device and method for form...

Group III nitride compound semiconductor device having a superlatti...

Light-emitting aluminum gallium indium nitride compound semiconduct...

Optical semiconductor device

Group III nitride compound semiconductor light-emitting device

III nitride compound semiconductor element an electrode forming method

Method of manufacturing group III nitride compound semiconductor li...

Optical semiconductor device

Group III nitride compound semiconductor light-emitting device havi...

Light-emitting aluminum gallium indium nitride compound semiconduct...

Optical semiconductor device

Methods and devices related to electrodes for p-type group III nitr...

Electrodes for p-type group III nitride compound semiconductors

Light-emitting semiconductor device using group III Nitrogen compou...

Semiconductor device having group III nitride compound and enabling...

Patents Applicationslast 30 patents

LIGHT-EMITTING SEMICONDUCTOR DEVICE USING GROUP III NITROGEN COMPOUND

LIGHT-EMITTING SEMICONDUCTOR DEVICE USING GROUP III NITROGEN COMPOUND

Light-emitting semiconductor device using group III nitrogen compound

Light-emitting semiconductor device using group III nitrogen compound

Light-emitting diode and process for producing the same

Light-emitting semiconductor device using group III nitrogen compound

LIght-emitting semiconductor device using group III nitrogen compound

Group lll nitride compound semiconductor device and method for form...

Method for producing group III nitride compounds semiconductor

III nitride compound semiconductor element an electrode forming method

Optical semiconductor device

Method for producing group III nitride compound semiconductor device

Method of manufacturing group III nitride compound semiconductor li...

Group III nitride compound semiconductor light-emitting device

Group III nitride compound semiconductor light-emitting device

Light-emitting aluminum gallium indium nitride compound semiconduct...