Asen ASENOV

Person

GLASGOW, GB

People

Patents Grantslast 30 patents

Information Patent Grant
Reduced local threshold voltage variation MOSFET using multiple lay...
- Patent number 11,757,002
- Issue date Sep 12, 2023
- SemiWise Limited
- Asen Asenov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduced local threshold voltage variation MOSFET using multiple lay...
- Patent number 11,049,939
- Issue date Jun 29, 2021
- SemiWise Limited
- Asen Asenov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device simulation
- Patent number 10,740,525
- Issue date Aug 11, 2020
- Synopsys, Inc.
- Asen Asenov
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Memory device
- Patent number 9,922,713
- Issue date Mar 20, 2018
- The University Court of the University of Glasgow
- Leroy Cronin
- G11 - INFORMATION STORAGE
Information Patent Grant
Fluctuation resistant FinFET
- Patent number 9,847,404
- Issue date Dec 19, 2017
- SemiWise Limited
- Robert J. Strain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing variation resistant metal-oxide-semiconduct...
- Patent number 9,373,684
- Issue date Jun 21, 2016
- SemiWise Limited
- Asen Asenov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacture of a variation resistant metal-oxide-semiconductor fiel...
- Patent number 9,312,362
- Issue date Apr 12, 2016
- SemiWise Limited
- Asen Asenov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate recessed FDSOI transistor with sandwich of active and etch con...
- Patent number 9,269,804
- Issue date Feb 23, 2016
- SemiWise Limited
- Asen Asenov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fluctuation resistant low access resistance fully depleted SOI tran...
- Patent number 9,263,568
- Issue date Feb 16, 2016
- SemiWise Limited
- Asen Asenov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fluctuation resistant FDSOI transistor with implanted subchannel
- Patent number 9,190,485
- Issue date Nov 17, 2015
- Gold Standard Simulations Ltd.
- Asen Asenov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Variation resistant MOSFETs with superior epitaxial properties
- Patent number 9,012,276
- Issue date Apr 21, 2015
- Gold Standard Simulations Ltd.
- Ashok K. Kapoor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Variation resistant metal-oxide-semiconductor field effect transist...
- Patent number 8,994,123
- Issue date Mar 31, 2015
- Gold Standard Simulations Ltd.
- Asen Asenov
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
A Memory Device Comprising an Electrically Floating Body Transistor
- Publication number 20230171944
- Publication date Jun 1, 2023
- Asen Asenov
Information Patent Application
Reduced Local Threshold Voltage Variation MOSFET Using Multiple Lay...
- Publication number 20210257456
- Publication date Aug 19, 2021
- SemiWise Limited
- Asen Asenov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE SIMULATION
- Publication number 20170103153
- Publication date Apr 13, 2017
- GOLD STANDARD SIMULATIONS LTD.
- Asen ASENOV
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Reduced Local Threshold Voltage Variation MOSFET Using Multiple Lay...
- Publication number 20170040449
- Publication date Feb 9, 2017
- SemiWise Limited
- Asen Asenov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Electronic Device
- Publication number 20160254058
- Publication date Sep 1, 2016
- THE UNIVERSITY COURT OF THE UNIVERSITY OF GLASGOW
- Leroy CRONIN
- G11 - INFORMATION STORAGE
Information Patent Application
Manufacture of a Variation Resistant Metal-Oxide-Semiconductor Fiel...
- Publication number 20150194505
- Publication date Jul 9, 2015
- GOLD STANDARD SIMULATIONS LTD.
- Asen Asenov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Variation Resistant MOSFETs with Superior Epitaxial Properties
- Publication number 20150011056
- Publication date Jan 8, 2015
- GOLD STANDARD SIMULATIONS LTD.
- Ashok K. Kapoor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fluctuation Resistant FinFET
- Publication number 20150008490
- Publication date Jan 8, 2015
- SEMI SOLUTIONS LLC
- Robert J. Strain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gate Recessed FDSOI Transistor with Sandwich of Active and Etch Con...
- Publication number 20140027818
- Publication date Jan 30, 2014
- GOLD STANDARD SIMULATIONS LTD.
- Asen Asenov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fluctuation Resistant Low Access Resistance Fully Depleted SOI Tran...
- Publication number 20140027853
- Publication date Jan 30, 2014
- GOLD STANDARD SIMULATIONS LTD.
- Asen Asenov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fluctuation Resistant FDSOI Transistor with Implanted Subchannel
- Publication number 20140027854
- Publication date Jan 30, 2014
- GOLD STANDARD SIMULATIONS LTD.
- Asen Asenov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Variation Resistant Metal-Oxide-Semiconductor Field Effect Transist...
- Publication number 20130249021
- Publication date Sep 26, 2013
- GOLD STANDARD SIMULATIONS LTD.
- Asen Asenov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Variation Resistant Metal-Oxide-Semiconductor Field Effect Transist...
- Publication number 20130049140
- Publication date Feb 28, 2013
- GOLD STANDARD SIMULATIONS LTD.
- Asen Asenov
- H01 - BASIC ELECTRIC ELEMENTS

Asen ASENOV

Person

Patents Grantslast 30 patents

Reduced local threshold voltage variation MOSFET using multiple lay...

Reduced local threshold voltage variation MOSFET using multiple lay...

Semiconductor device simulation

Memory device

Fluctuation resistant FinFET

Method of manufacturing variation resistant metal-oxide-semiconduct...

Manufacture of a variation resistant metal-oxide-semiconductor fiel...

Gate recessed FDSOI transistor with sandwich of active and etch con...

Fluctuation resistant low access resistance fully depleted SOI tran...

Fluctuation resistant FDSOI transistor with implanted subchannel

Variation resistant MOSFETs with superior epitaxial properties

Variation resistant metal-oxide-semiconductor field effect transist...

Patents Applicationslast 30 patents

A Memory Device Comprising an Electrically Floating Body Transistor

Reduced Local Threshold Voltage Variation MOSFET Using Multiple Lay...

SEMICONDUCTOR DEVICE SIMULATION

Reduced Local Threshold Voltage Variation MOSFET Using Multiple Lay...

Electronic Device

Manufacture of a Variation Resistant Metal-Oxide-Semiconductor Fiel...

Variation Resistant MOSFETs with Superior Epitaxial Properties

Fluctuation Resistant FinFET

Gate Recessed FDSOI Transistor with Sandwich of Active and Etch Con...

Fluctuation Resistant Low Access Resistance Fully Depleted SOI Tran...

Fluctuation Resistant FDSOI Transistor with Implanted Subchannel

Variation Resistant Metal-Oxide-Semiconductor Field Effect Transist...

Variation Resistant Metal-Oxide-Semiconductor Field Effect Transist...