Ashima B. Chakravarti

Person

Hopewell Junction, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Selective deposition of germanium spacers on nitride
- Patent number 8,900,961
- Issue date Dec 2, 2014
- International Business Machines Corporation
- Ashima B. Chakravarti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial growth of silicon doped with carbon and phosphorus using...
- Patent number 8,685,845
- Issue date Apr 1, 2014
- International Business Machines Corporation
- Abhishek Dube
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure for PMOS devices with high K metal gate integr...
- Patent number 8,575,655
- Issue date Nov 5, 2013
- International Business Machines Corporation
- Stephen W. Bedell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Technique to create a buried plate in embedded dynamic random acces...
- Patent number 8,563,446
- Issue date Oct 22, 2013
- International Business Machines Corporation
- Ashima B. Chakravarti
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method and structure for PMOS devices with high K metal gate integr...
- Patent number 8,440,547
- Issue date May 14, 2013
- International Business Machines Corporation
- Stephen W. Bedell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon germanium film formation method and structure
- Patent number 8,389,352
- Issue date Mar 5, 2013
- International Business Machines Corporation
- Ashima B. Chakravarti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon germanium film formation method and structure
- Patent number 8,354,314
- Issue date Jan 15, 2013
- International Business Machines Corporation
- Ashima B. Chakravarti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Technique to create a buried plate in embedded dynamic random acces...
- Patent number 8,236,710
- Issue date Aug 7, 2012
- International Business Machines Corporation
- Ashima B. Chakravarti
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Process for epitaxially growing epitaxial material regions
- Patent number 8,173,524
- Issue date May 8, 2012
- International Business Machines Corporation
- Ashima B. Chakravarti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit system with carbon and non-carbon silicon
- Patent number 8,105,955
- Issue date Jan 31, 2012
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Jin Ping Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabricating semiconductor structures
- Patent number 8,080,451
- Issue date Dec 20, 2011
- International Business Machines Corporation
- Thomas N. Adam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective deposition of germanium spacers on nitride
- Patent number 7,888,241
- Issue date Feb 15, 2011
- International Business Machines Corporation
- Ashima B. Chakravarti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Raised STI structure and superdamascene technique for NMOSFET perfo...
- Patent number 7,838,932
- Issue date Nov 23, 2010
- International Business Machines Corporation
- Ashima B. Chakravarti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for improving semiconductor surfaces
- Patent number 7,776,624
- Issue date Aug 17, 2010
- International Business Machines Corporation
- Ashima B. Chakravarti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Protection of SiGe during etch and clean operations
- Patent number 7,767,579
- Issue date Aug 3, 2010
- International Business Machines Corporation
- Ashima B Chakravarti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Pattern independent Si:C selective epitaxy
- Patent number 7,759,213
- Issue date Jul 20, 2010
- International Business Machines Corporation
- Abhishek Dube
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective deposition of germanium spacers on nitride
- Patent number 7,705,385
- Issue date Apr 27, 2010
- International Business Machines Corporation
- Ashima Chakravarti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a semiconductor structures and structures th...
- Patent number 7,687,804
- Issue date Mar 30, 2010
- International Business Machines Corporation
- Thomas N. Adam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a doped nitride film, doped oxide film and oth...
- Patent number 7,595,010
- Issue date Sep 29, 2009
- International Business Machines Corporation
- Ashima B. Chakravarti
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Raised STI structure and superdamascene technique for NMOSFET perfo...
- Patent number 7,473,594
- Issue date Jan 6, 2009
- International Business Machines Corporation
- Ashima B. Chakravarti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped nitride film, doped oxide film and other doped films
- Patent number 7,361,611
- Issue date Apr 22, 2008
- International Business Machines Corporation
- Ashima B. Chakravarti
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Polycrystalline silicon layer with nano-grain structure and method...
- Patent number 7,232,774
- Issue date Jun 19, 2007
- International Business Machines Corporation
- Ashima B. Chakravarti
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Deposition of carbon and nitrogen doped poly silicon films, and ret...
- Patent number 7,119,016
- Issue date Oct 10, 2006
- International Business Machines Corporation
- Ashima B. Chakravarti
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Material for contact etch layer to enhance device performance
- Patent number 7,001,844
- Issue date Feb 21, 2006
- International Business Machines Corporation
- Ashima B. Chakravarti
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
CMOS device structure with improved PFET gate electrode
- Patent number 6,838,695
- Issue date Jan 4, 2005
- International Business Machines Corporation
- Bruce B. Doris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RTCVD process and reactor for improved conformality and step-coverage
- Patent number 6,576,565
- Issue date Jun 10, 2003
- Infineon Technologies, AG
- Ashima Chakravarti
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for reducing the microloading effect in a chemical vapor dep...
- Patent number 6,555,166
- Issue date Apr 29, 2003
- International Business Machines
- Oleg Gluschenkov
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Simultaneous formation of deep trench capacitor and resistor
- Patent number 6,528,383
- Issue date Mar 4, 2003
- International Business Machines Corporation
- Satya N. Chakravarti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and materials for depositing films on semiconductor substrates
- Patent number 6,500,772
- Issue date Dec 31, 2002
- International Business Machines Corporation
- Ashima B. Chakravarti
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for reducing surface oxide in polysilicon processing
- Patent number 6,436,760
- Issue date Aug 20, 2002
- International Business Machines Corporation
- Kwong H. Wong
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SILICON GERMANIUM FILM FORMATION METHOD AND STRUCTURE
- Publication number 20130009211
- Publication date Jan 10, 2013
- International Business Machines Corporation
- Ashima B. Chakravarti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNIQUE TO CREATE A BURIED PLATE IN EMBEDDED DYNAMIC RANDOM ACCES...
- Publication number 20120228736
- Publication date Sep 13, 2012
- International Business Machines Corporation
- ASHIMA B. CHAKRAVARTI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON GERMANIUM FILM FORMATION METHOD AND STRUCTURE
- Publication number 20120205749
- Publication date Aug 16, 2012
- International Business Machines Corporation
- Ashima B. Chakravarti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND STRUCTURE FOR PMOS DEVICES WITH HIGH K METAL GATE INTEGR...
- Publication number 20120181631
- Publication date Jul 19, 2012
- International Business Machines Corporation
- Stephen W. Bedell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNIQUE TO CREATE A BURIED PLATE IN EMBEDDED DYNAMIC RANDOM ACCES...
- Publication number 20120086103
- Publication date Apr 12, 2012
- International Business Machines Corporation
- ASHIMA B. CHAKRAVARTI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL GROWTH OF SILICON DOPED WITH CARBON AND PHOSPHORUS USING...
- Publication number 20120043556
- Publication date Feb 23, 2012
- International Business Machines Corporation
- Abhishek Dube
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE DEPOSITION OF GERMANIUM SPACERS ON NITRIDE
- Publication number 20110034000
- Publication date Feb 10, 2011
- International Business Machines Corporation
- Ashima B. Chakravarti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND STRUCTURE FOR PMOS DEVICES WITH HIGH K METAL GATE INTEGR...
- Publication number 20100200937
- Publication date Aug 12, 2010
- International Business Machines Corporation
- Stephen W. Bedell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING SEMICONDUCTOR STRUCTURES
- Publication number 20100112762
- Publication date May 6, 2010
- Thomas N. Adam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PATTERN INDEPENDENT Si:C SELECTIVE EPITAXY
- Publication number 20100035419
- Publication date Feb 11, 2010
- International Business Machines Corporation
- ABHISHEK DUBE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR IMPROVING SEMICONDUCTOR SURFACES
- Publication number 20100009524
- Publication date Jan 14, 2010
- International Business Machines
- Ashima B. Chakravarti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POLYGRAIN ENGINEERING BY ADDING IMPURITIES IN THE GAS PHASE DURING...
- Publication number 20090269926
- Publication date Oct 29, 2009
- International Business Machines Corporation
- Abhishek Dube
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING CARBON SILICON ALLOY (CSA) AND STRUCTURES THEREOF
- Publication number 20090267118
- Publication date Oct 29, 2009
- International Business Machines Corporation
- Ashima B. Chakravarti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING A SEMICONDUCTOR STRUCTURES AND STRUCTURES TH...
- Publication number 20090173941
- Publication date Jul 9, 2009
- International Business Machines Corporation
- Thomas N. Adam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROTECTION OF SIGE DURING ETCH AND CLEAN OPERATIONS
- Publication number 20090155969
- Publication date Jun 18, 2009
- International Business Machines Corporation
- ASHIMA B. CHAKRAVARTI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELIMINATE NOTCHING IN SI POST SI-RECESS RIE TO IMPROVE EMBEDDED DOP...
- Publication number 20090001430
- Publication date Jan 1, 2009
- International Business Machines Corporation
- Ashima B. Chakravarti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Selective Deposition of Germanium Spacers on Nitride
- Publication number 20080242041
- Publication date Oct 2, 2008
- International Business Machines Corporation
- Ashima B. Chakravarti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RAISED STI STRUCTURE AND SUPERDAMASCENE TECHNIQUE FOR NMOSFET PERFO...
- Publication number 20080128712
- Publication date Jun 5, 2008
- Ashima B. Chakravarti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT SYSTEM WITH CARBON AND NON-CARBON SILICON
- Publication number 20080121926
- Publication date May 29, 2008
- Chartered Semiconductor Manufacturing LTD.
- Jin Ping Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPED NITRIDE FILM, DOPED OXIDE FILM AND OTHER DOPED FILMS
- Publication number 20080054228
- Publication date Mar 6, 2008
- Ashima B. Chakravarti
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
RAISED STI STRUCTURE AND SUPERDAMASCENE TECHNIQUE FOR NMOSFET PERFO...
- Publication number 20080026516
- Publication date Jan 31, 2008
- International Business Machines Corporation
- Ashima B. Chakravarti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE DEPOSITION OF GERMANIUM SPACERS ON NITRIDE
- Publication number 20070059894
- Publication date Mar 15, 2007
- International Business Machines Corporation
- Ashima B. Chakravarti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPED NITRIDE FILM, DOPED OXIDE FILM AND OTHER DOPED FILMS AND DEPO...
- Publication number 20060237846
- Publication date Oct 26, 2006
- International Business Machines Corporation
- Ashima B. Chakravarti
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Doped nitride film, doped oxide film and other doped films
- Publication number 20060138566
- Publication date Jun 29, 2006
- Ashima B. Chakravarti
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Material for contact etch layer to enhance device performance
- Publication number 20060040497
- Publication date Feb 23, 2006
- Ashima B. Chakravarti
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
DOPED NITRIDE FILM, DOPED OXIDE FILM AND OTHER DOPED FILMS
- Publication number 20050287747
- Publication date Dec 29, 2005
- International Business Machines Corporation
- Ashima B. Chakravarti
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Material for contact etch layer to enhance device performance
- Publication number 20050245081
- Publication date Nov 3, 2005
- Ashima B. Chakravarti
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Polycrystalline Silicon Layer With Nano-grain Structure and Method...
- Publication number 20050158924
- Publication date Jul 21, 2005
- International Business Machines Corporation
- Ashima B. Chakravarti
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Deposition of carbon and nitrogen doped poly silicon films, and ret...
- Publication number 20050085054
- Publication date Apr 21, 2005
- Ashima B. Chakravarti
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
CMOS device structure with improved PFET gate electrode
- Publication number 20040099860
- Publication date May 27, 2004
- International Business Machines Corporation
- Bruce B. Doris
- H01 - BASIC ELECTRIC ELEMENTS

Ashima B. Chakravarti

Person

Patents Grantslast 30 patents

Selective deposition of germanium spacers on nitride

Epitaxial growth of silicon doped with carbon and phosphorus using...

Method and structure for PMOS devices with high K metal gate integr...

Technique to create a buried plate in embedded dynamic random acces...

Method and structure for PMOS devices with high K metal gate integr...

Silicon germanium film formation method and structure

Silicon germanium film formation method and structure

Technique to create a buried plate in embedded dynamic random acces...

Process for epitaxially growing epitaxial material regions

Integrated circuit system with carbon and non-carbon silicon

Fabricating semiconductor structures

Selective deposition of germanium spacers on nitride

Raised STI structure and superdamascene technique for NMOSFET perfo...

Method for improving semiconductor surfaces

Protection of SiGe during etch and clean operations

Pattern independent Si:C selective epitaxy

Selective deposition of germanium spacers on nitride

Method for fabricating a semiconductor structures and structures th...

Method for producing a doped nitride film, doped oxide film and oth...

Raised STI structure and superdamascene technique for NMOSFET perfo...

Doped nitride film, doped oxide film and other doped films

Polycrystalline silicon layer with nano-grain structure and method...

Deposition of carbon and nitrogen doped poly silicon films, and ret...

Material for contact etch layer to enhance device performance

CMOS device structure with improved PFET gate electrode

RTCVD process and reactor for improved conformality and step-coverage

Method for reducing the microloading effect in a chemical vapor dep...

Simultaneous formation of deep trench capacitor and resistor

Methods and materials for depositing films on semiconductor substrates

Method for reducing surface oxide in polysilicon processing

Patents Applicationslast 30 patents

SILICON GERMANIUM FILM FORMATION METHOD AND STRUCTURE

TECHNIQUE TO CREATE A BURIED PLATE IN EMBEDDED DYNAMIC RANDOM ACCES...

SILICON GERMANIUM FILM FORMATION METHOD AND STRUCTURE

METHOD AND STRUCTURE FOR PMOS DEVICES WITH HIGH K METAL GATE INTEGR...

TECHNIQUE TO CREATE A BURIED PLATE IN EMBEDDED DYNAMIC RANDOM ACCES...

EPITAXIAL GROWTH OF SILICON DOPED WITH CARBON AND PHOSPHORUS USING...

SELECTIVE DEPOSITION OF GERMANIUM SPACERS ON NITRIDE

METHOD AND STRUCTURE FOR PMOS DEVICES WITH HIGH K METAL GATE INTEGR...

METHOD FOR FABRICATING SEMICONDUCTOR STRUCTURES

PATTERN INDEPENDENT Si:C SELECTIVE EPITAXY

METHOD FOR IMPROVING SEMICONDUCTOR SURFACES

POLYGRAIN ENGINEERING BY ADDING IMPURITIES IN THE GAS PHASE DURING...

METHOD FOR FORMING CARBON SILICON ALLOY (CSA) AND STRUCTURES THEREOF

METHOD FOR FABRICATING A SEMICONDUCTOR STRUCTURES AND STRUCTURES TH...

PROTECTION OF SIGE DURING ETCH AND CLEAN OPERATIONS

ELIMINATE NOTCHING IN SI POST SI-RECESS RIE TO IMPROVE EMBEDDED DOP...

Selective Deposition of Germanium Spacers on Nitride

RAISED STI STRUCTURE AND SUPERDAMASCENE TECHNIQUE FOR NMOSFET PERFO...

INTEGRATED CIRCUIT SYSTEM WITH CARBON AND NON-CARBON SILICON

DOPED NITRIDE FILM, DOPED OXIDE FILM AND OTHER DOPED FILMS

RAISED STI STRUCTURE AND SUPERDAMASCENE TECHNIQUE FOR NMOSFET PERFO...

SELECTIVE DEPOSITION OF GERMANIUM SPACERS ON NITRIDE

DOPED NITRIDE FILM, DOPED OXIDE FILM AND OTHER DOPED FILMS AND DEPO...

Doped nitride film, doped oxide film and other doped films

Material for contact etch layer to enhance device performance

DOPED NITRIDE FILM, DOPED OXIDE FILM AND OTHER DOPED FILMS

Material for contact etch layer to enhance device performance

Polycrystalline Silicon Layer With Nano-grain Structure and Method...

Deposition of carbon and nitrogen doped poly silicon films, and ret...

CMOS device structure with improved PFET gate electrode