Ashish Baraskar

Person

Santa Clara, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Three-dimensional memory device including III-V compound semiconduc...
- Patent number 11,778,817
- Issue date Oct 3, 2023
- SanDisk Technologies LLC
- Ashish Kumar Baraskar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device including a silicon-germanium sourc...
- Patent number 11,721,727
- Issue date Aug 8, 2023
- SanDisk Technologies LLC
- Ashish Baraskar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device with high mobility channels and nic...
- Patent number 11,538,828
- Issue date Dec 27, 2022
- SanDisk Technologies LLC
- Ashish Baraskar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device containing III-V compound semicondu...
- Patent number 11,508,748
- Issue date Nov 22, 2022
- SanDisk Technologies LLC
- Ashish Baraskar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device with high mobility channels and nic...
- Patent number 11,495,613
- Issue date Nov 8, 2022
- SanDisk Technologies LLC
- Ashish Baraskar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for reusing substrates during manufacture of a bonded assem...
- Patent number 11,398,451
- Issue date Jul 26, 2022
- SanDisk Technologies LLC
- Ashish Baraskar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device containing III-V compound semicondu...
- Patent number 11,374,020
- Issue date Jun 28, 2022
- SanDisk Technologies LLC
- Ashish Baraskar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device including a silicon-germanium sourc...
- Patent number 11,322,509
- Issue date May 3, 2022
- SanDisk Technologies LLC
- Ashish Baraskar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device including III-V compound semiconduc...
- Patent number 11,302,713
- Issue date Apr 12, 2022
- SanDisk Technologies LLC
- Ashish Kumar Baraskar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device containing III-V compound semicondu...
- Patent number 11,282,857
- Issue date Mar 22, 2022
- SanDisk Technologies LLC
- Ashish Baraskar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device containing plural work function wor...
- Patent number 11,101,288
- Issue date Aug 24, 2021
- SanDisk Technologies LLC
- Yanli Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device containing plural work function wor...
- Patent number 11,063,063
- Issue date Jul 13, 2021
- SanDisk Technologies LLC
- Yanli Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-pass programming process for memory device which omits verify...
- Patent number 11,037,640
- Issue date Jun 15, 2021
- SanDisk Technologies LLC
- Ashish Baraskar
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device with compensation for program speed variations due to...
- Patent number 11,024,387
- Issue date Jun 1, 2021
- SanDisk Technologies LLC
- Ching-Huang Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reprogramming memory cells to tighten threshold voltage distributio...
- Patent number 10,964,402
- Issue date Mar 30, 2021
- SanDisk Technologies LLC
- Han-Ping Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device with compensation for erase speed variations due to b...
- Patent number 10,923,197
- Issue date Feb 16, 2021
- SanDisk Technologies LLC
- Ching-Huang Lu
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device with compensation for program speed variations due to...
- Patent number 10,878,914
- Issue date Dec 29, 2020
- SanDisk Technologies LLC
- Ching-Huang Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-pass programming process for memory device which omits verify...
- Patent number 10,811,109
- Issue date Oct 20, 2020
- SanDisk Technologies LLC
- Ashish Baraskar
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensional memory devices using carbon-doped aluminum oxide...
- Patent number 10,804,282
- Issue date Oct 13, 2020
- SanDisk Technologies LLC
- Ashish Baraskar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device with compensation for erase speed variations due to b...
- Patent number 10,741,253
- Issue date Aug 11, 2020
- SanDisk Technologies LLC
- Ching-Huang Lu
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device with compensation for program speed variations due to...
- Patent number 10,665,301
- Issue date May 26, 2020
- SanDisk Technologies LLC
- Ching-Huang Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory with reduced program speed variation
- Patent number 10,497,711
- Issue date Dec 3, 2019
- SanDisk Technologies LLC
- Ashish Baraskar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reducing charge loss in data memory cell adjacent to dummy memory cell
- Patent number 10,121,552
- Issue date Nov 6, 2018
- SanDisk Technologies LLC
- Ashish Baraskar
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensional memory device containing structurally reinforced...
- Patent number 10,115,730
- Issue date Oct 30, 2018
- SanDisk Technologies LLC
- Ashish Baraskar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Channel pre-charge to suppress disturb of select gate transistors d...
- Patent number 10,068,651
- Issue date Sep 4, 2018
- SanDisk Technologies LLC
- Vinh Diep
- G11 - INFORMATION STORAGE
Information Patent Grant
Forming memory cell film in stack opening
- Patent number 10,020,314
- Issue date Jul 10, 2018
- SanDisk Technologies LLC
- Ashish Baraskar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory hole size variation in a 3D stacked memory
- Patent number 9,812,462
- Issue date Nov 7, 2017
- SanDisk Technologies LLC
- Liang Pang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating 3D NAND
- Patent number 9,779,948
- Issue date Oct 3, 2017
- SanDisk Technologies LLC
- Ashish Baraskar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device with select transistor having charg...
- Patent number 9,748,266
- Issue date Aug 29, 2017
- SanDisk Technologies LLC
- Ashish Baraskar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming memory cell film
- Patent number 9,673,216
- Issue date Jun 6, 2017
- SanDisk Technologies LLC
- Ashish Baraskar
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE WITH HIGH MOBILITY CHANNELS AND NIC...
- Publication number 20220045087
- Publication date Feb 10, 2022
- SANDISK TECHNOLOGIES LLC
- Ashish BARASKAR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE WITH HIGH MOBILITY CHANNELS AND NIC...
- Publication number 20220045088
- Publication date Feb 10, 2022
- SANDISK TECHNOLOGIES LLC
- Ashish BARASKAR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE INCLUDING III-V COMPOUND SEMICONDUC...
- Publication number 20210408033
- Publication date Dec 30, 2021
- SANDISK TECHNOLOGIES LLC
- Ashish Kumar BARASKAR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE INCLUDING III-V COMPOUND SEMICONDUC...
- Publication number 20210408032
- Publication date Dec 30, 2021
- SANDISK TECHNOLOGIES LLC
- Ashish Kumar BARASKAR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE CONTAINING III-V COMPOUND SEMICONDU...
- Publication number 20210375908
- Publication date Dec 2, 2021
- SANDISK TECHNOLOGIES LLC
- Ashish BARASKAR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE CONTAINING III-V COMPOUND SEMICONDU...
- Publication number 20210375910
- Publication date Dec 2, 2021
- SANDISK TECHNOLOGIES LLC
- Ashish BARASKAR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE CONTAINING III-V COMPOUND SEMICONDU...
- Publication number 20210375909
- Publication date Dec 2, 2021
- SANDISK TECHNOLOGIES LLC
- Ashish BARASKAR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MODIFIED VERIFY SCHEME FOR PROGRAMMING A MEMORY APPARATUS
- Publication number 20210202022
- Publication date Jul 1, 2021
- SANDISK TECHNOLOGIES LLC
- Ashish Baraskar
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE CONTAINING PLURAL WORK FUNCTION WOR...
- Publication number 20210183883
- Publication date Jun 17, 2021
- SANDISK TECHNOLOGIES LLC
- Yanli ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE CONTAINING PLURAL WORK FUNCTION WOR...
- Publication number 20210183882
- Publication date Jun 17, 2021
- SANDISK TECHNOLOGIES LLC
- Yanli ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE WITH COMPENSATION FOR PROGRAM SPEED VARIATIONS DUE TO...
- Publication number 20210082515
- Publication date Mar 18, 2021
- SANDISK TECHNOLOGIES LLC
- Ching-Huang Lu
- G11 - INFORMATION STORAGE
Information Patent Application
METHODS FOR REUSING SUBSTRATES DURING MANUFACTURE OF A BONDED ASSEM...
- Publication number 20210082865
- Publication date Mar 18, 2021
- SANDISK TECHNOLOGIES LLC
- Ashish BARASKAR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE INCLUDING A SILICON-GERMANIUM SOURC...
- Publication number 20200388688
- Publication date Dec 10, 2020
- SANDISK TECHNOLOGIES LLC
- Ashish BARASKAR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE INCLUDING A SILICON-GERMANIUM SOURC...
- Publication number 20200388626
- Publication date Dec 10, 2020
- SANDISK TECHNOLOGIES LLC
- Ashish BARASKAR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE WITH COMPENSATION FOR ERASE SPEED VARIATIONS DUE TO B...
- Publication number 20200335168
- Publication date Oct 22, 2020
- SANDISK TECHNOLOGIES LLC
- Ching-Huang Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-PASS PROGRAMMING PROCESS FOR MEMORY DEVICE WHICH OMITS VERIFY...
- Publication number 20200312414
- Publication date Oct 1, 2020
- SANDISK TECHNOLOGIES LLC
- Ashish Baraskar
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE WITH COMPENSATION FOR ERASE SPEED VARIATIONS DUE TO B...
- Publication number 20200265897
- Publication date Aug 20, 2020
- SANDISK TECHNOLOGIES LLC
- Ching-Huang Lu
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES USING CARBON-DOPED ALUMINUM OXIDE...
- Publication number 20200258896
- Publication date Aug 13, 2020
- SANDISK TECHNOLOGIES LLC
- Ashish BARASKAR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE WITH COMPENSATION FOR PROGRAM SPEED VARIATIONS DUE TO...
- Publication number 20200243141
- Publication date Jul 30, 2020
- SANDISK TECHNOLOGIES LLC
- Ching-Huang Lu
- G11 - INFORMATION STORAGE
Information Patent Application
MULTI-PASS PROGRAMMING PROCESS FOR MEMORY DEVICE WHICH OMITS VERIFY...
- Publication number 20200211663
- Publication date Jul 2, 2020
- SANDISK TECHNOLOGIES LLC
- Ashish Baraskar
- G11 - INFORMATION STORAGE
Information Patent Application
Reducing Charge Loss In Data Memory Cell Adjacent To Dummy Memory Cell
- Publication number 20180308556
- Publication date Oct 25, 2018
- SanDisk Technologies LLC
- Ashish Baraskar
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY WITH REDUCED VARIATIONS IN GATE RESISTANCE
- Publication number 20180175054
- Publication date Jun 21, 2018
- SanDisk Technologies LLC
- Ashish Baraskar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-VOLATILE MEMORY WITH REDUCED PROGRAM SPEED VARIATION
- Publication number 20180122814
- Publication date May 3, 2018
- SanDisk Technologies LLC
- Ashish Baraskar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Non-Volatile Memory With Reduced Program Speed Variation
- Publication number 20180033794
- Publication date Feb 1, 2018
- SanDisk Technologies LLC
- Ashish Baraskar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-VOLATILE MEMORY WITH REDUCED VARIATIONS IN GATE RESISTANCE
- Publication number 20180033798
- Publication date Feb 1, 2018
- SanDisk Technologies LLC
- Ashish Baraskar
- H01 - BASIC ELECTRIC ELEMENTS

Ashish Baraskar

Person

Patents Grantslast 30 patents

Three-dimensional memory device including III-V compound semiconduc...

Three-dimensional memory device including a silicon-germanium sourc...

Three-dimensional memory device with high mobility channels and nic...

Three-dimensional memory device containing III-V compound semicondu...

Three-dimensional memory device with high mobility channels and nic...

Methods for reusing substrates during manufacture of a bonded assem...

Three-dimensional memory device containing III-V compound semicondu...

Three-dimensional memory device including a silicon-germanium sourc...

Three-dimensional memory device including III-V compound semiconduc...

Three-dimensional memory device containing III-V compound semicondu...

Three-dimensional memory device containing plural work function wor...

Three-dimensional memory device containing plural work function wor...

Multi-pass programming process for memory device which omits verify...

Memory device with compensation for program speed variations due to...

Reprogramming memory cells to tighten threshold voltage distributio...

Memory device with compensation for erase speed variations due to b...

Memory device with compensation for program speed variations due to...

Multi-pass programming process for memory device which omits verify...

Three-dimensional memory devices using carbon-doped aluminum oxide...

Memory device with compensation for erase speed variations due to b...

Memory device with compensation for program speed variations due to...

Non-volatile memory with reduced program speed variation

Reducing charge loss in data memory cell adjacent to dummy memory cell

Three-dimensional memory device containing structurally reinforced...

Channel pre-charge to suppress disturb of select gate transistors d...

Forming memory cell film in stack opening

Memory hole size variation in a 3D stacked memory

Method of fabricating 3D NAND

Three-dimensional memory device with select transistor having charg...

Method of forming memory cell film

Patents Applicationslast 30 patents

THREE-DIMENSIONAL MEMORY DEVICE WITH HIGH MOBILITY CHANNELS AND NIC...

THREE-DIMENSIONAL MEMORY DEVICE WITH HIGH MOBILITY CHANNELS AND NIC...

THREE-DIMENSIONAL MEMORY DEVICE INCLUDING III-V COMPOUND SEMICONDUC...

THREE-DIMENSIONAL MEMORY DEVICE INCLUDING III-V COMPOUND SEMICONDUC...

THREE-DIMENSIONAL MEMORY DEVICE CONTAINING III-V COMPOUND SEMICONDU...

THREE-DIMENSIONAL MEMORY DEVICE CONTAINING III-V COMPOUND SEMICONDU...

THREE-DIMENSIONAL MEMORY DEVICE CONTAINING III-V COMPOUND SEMICONDU...

MODIFIED VERIFY SCHEME FOR PROGRAMMING A MEMORY APPARATUS

THREE-DIMENSIONAL MEMORY DEVICE CONTAINING PLURAL WORK FUNCTION WOR...

THREE-DIMENSIONAL MEMORY DEVICE CONTAINING PLURAL WORK FUNCTION WOR...

MEMORY DEVICE WITH COMPENSATION FOR PROGRAM SPEED VARIATIONS DUE TO...

METHODS FOR REUSING SUBSTRATES DURING MANUFACTURE OF A BONDED ASSEM...

THREE-DIMENSIONAL MEMORY DEVICE INCLUDING A SILICON-GERMANIUM SOURC...

THREE-DIMENSIONAL MEMORY DEVICE INCLUDING A SILICON-GERMANIUM SOURC...

MEMORY DEVICE WITH COMPENSATION FOR ERASE SPEED VARIATIONS DUE TO B...

MULTI-PASS PROGRAMMING PROCESS FOR MEMORY DEVICE WHICH OMITS VERIFY...

MEMORY DEVICE WITH COMPENSATION FOR ERASE SPEED VARIATIONS DUE TO B...

THREE-DIMENSIONAL MEMORY DEVICES USING CARBON-DOPED ALUMINUM OXIDE...

MEMORY DEVICE WITH COMPENSATION FOR PROGRAM SPEED VARIATIONS DUE TO...

MULTI-PASS PROGRAMMING PROCESS FOR MEMORY DEVICE WHICH OMITS VERIFY...

Reducing Charge Loss In Data Memory Cell Adjacent To Dummy Memory Cell

NON-VOLATILE MEMORY WITH REDUCED VARIATIONS IN GATE RESISTANCE

NON-VOLATILE MEMORY WITH REDUCED PROGRAM SPEED VARIATION

Non-Volatile Memory With Reduced Program Speed Variation

NON-VOLATILE MEMORY WITH REDUCED VARIATIONS IN GATE RESISTANCE