Ashish Verma Penumatcha

Person

Hillsboro, OR, US

People

Patents Grantslast 30 patents

Information Patent Grant
Transition metal dichalcogenide nanowires and methods of fabrication
- Patent number 12,176,388
- Issue date Dec 24, 2024
- Intel Corporation
- Kevin O'Brien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistor (FET) with self-aligned ferroelectric capac...
- Patent number 12,166,122
- Issue date Dec 10, 2024
- Intel Corporation
- Shriram Shivaraman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Piezo-resistive transistor based resonator with anti-ferroelectric...
- Patent number 12,125,893
- Issue date Oct 22, 2024
- Intel Corporation
- Tanay Gosavi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transition metal dichalcogenide (TMD) layer stack for transistor ap...
- Patent number 12,125,895
- Issue date Oct 22, 2024
- Intel Corporation
- Chelsey Dorow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Piezo-resistive transistor based resonator with ferroelectric gate...
- Patent number 12,113,117
- Issue date Oct 8, 2024
- Intel Corporation
- Tanay Gosavi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cells with ferroelectric capacitors separate from transistor...
- Patent number 11,980,037
- Issue date May 7, 2024
- Intel Corporation
- Nazila Haratipour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
TMD inverted nanowire integration
- Patent number 11,935,956
- Issue date Mar 19, 2024
- Intel Corporation
- Kevin P. O'Brien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Charge-transfer spacers for stacked nanoribbon 2D transistors
- Patent number 11,908,950
- Issue date Feb 20, 2024
- Intel Corporation
- Kirby Maxey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MFM capacitor and process for forming such
- Patent number 11,901,400
- Issue date Feb 13, 2024
- Intel Corporation
- Nazila Haratipour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MFM capacitor with multilayered oxides and metals and processes for...
- Patent number 11,769,789
- Issue date Sep 26, 2023
- Intel Corporation
- Nazila Haratipour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multilayer high-k gate dielectric for a high performance logic tran...
- Patent number 11,742,407
- Issue date Aug 29, 2023
- Intel Corporation
- Seung Hoon Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate stacks for FinFET transistors
- Patent number 11,695,051
- Issue date Jul 4, 2023
- Intel Corporation
- Ashish Penumatcha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FeFET with embedded conductive sidewall spacers and process for for...
- Patent number 11,653,502
- Issue date May 16, 2023
- Intel Corporation
- Shriram Shivaraman
- G11 - INFORMATION STORAGE
Information Patent Grant
Piezo-resistive transistor based resonator with anti-ferroelectric...
- Patent number 11,646,356
- Issue date May 9, 2023
- Intel Corporation
- Tanay Gosavi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric transistors to store multiple states of resistances f...
- Patent number 11,646,374
- Issue date May 9, 2023
- Intel Corporation
- Ashish Verma Penumatcha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor device with (anti)ferroelectric spacer structures
- Patent number 11,640,984
- Issue date May 2, 2023
- Intel Corporation
- Jack Kavalieros
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Piezo-resistive transistor based resonator with ferroelectric gate...
- Patent number 11,637,191
- Issue date Apr 25, 2023
- Intel Corporation
- Tanay Gosavi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor device with variously conformal gate dielectric layers
- Patent number 11,616,130
- Issue date Mar 28, 2023
- Intel Corporation
- Seung Hoon Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric resonator
- Patent number 11,605,624
- Issue date Mar 14, 2023
- Intel Corporation
- Tanay Gosavi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ultra-dense ferroelectric memory with self-aligned patterning
- Patent number 11,532,439
- Issue date Dec 20, 2022
- Intel Corporation
- Chia-Ching Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Relaxor ferroelectric capacitors and methods of fabrication
- Patent number 11,316,027
- Issue date Apr 26, 2022
- Intel Corporation
- Sou-Chi Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory devices based on capacitors with built-in electric field
- Patent number 11,171,145
- Issue date Nov 9, 2021
- Intel Corporation
- Sou-Chi Chang
- G11 - INFORMATION STORAGE
Information Patent Grant
Vertical memory control circuitry located in interconnect layers
- Patent number 10,886,286
- Issue date Jan 5, 2021
- Intel Corporation
- Ashish Verma Penumatcha
- G11 - INFORMATION STORAGE
Information Patent Grant
Integrated circuit device with a two-dimensional semiconductor mate...
- Patent number 10,886,265
- Issue date Jan 5, 2021
- Intel Corporation
- Ashish Verma Penumatcha
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEEDED GROWTH FOR 2D NANORIBBON TRANSISTORS
- Publication number 20240222428
- Publication date Jul 4, 2024
- Intel Corporation
- Chelsey Dorow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BEOL CONTACT METALS FOR 2D TRANSISTORS
- Publication number 20240222461
- Publication date Jul 4, 2024
- Intel Corporation
- Ande Kitamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR STRUCTURES HAVING A DOPING LAYER ON TRANSITION METAL DIC...
- Publication number 20240222482
- Publication date Jul 4, 2024
- Intel Corporation
- Kevin P. O'Brien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH CHANNEL MATERIAL IN A STACK WITH INSULATOR MATERIAL...
- Publication number 20240222484
- Publication date Jul 4, 2024
- Intel Corporation
- Chia-Ching Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PASSIVATION OF CRYSTALLINE SUBSTRATE FOR METAL CHALCOGEN MATERIAL S...
- Publication number 20240222113
- Publication date Jul 4, 2024
- Intel Corporation
- Carl H. Naylor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
2D NANORIBBONS UTILIZING SILICON SCAFFOLDING
- Publication number 20240222483
- Publication date Jul 4, 2024
- Intel Corporation
- Carl H. Naylor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TMD INVERTED NANOWIRE INTEGRATION
- Publication number 20240186416
- Publication date Jun 6, 2024
- Intel Corporation
- Kevin P. O'Brien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACK-END-OF-LINE 2D TRANSISTOR
- Publication number 20240006521
- Publication date Jan 4, 2024
- Intel Corporation
- Chia-Ching LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT ARCHITECTURE FOR 2D STACKED NANORIBBON TRANSISTOR
- Publication number 20240006484
- Publication date Jan 4, 2024
- Intel Corporation
- Ashish Verma PENUMATCHA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ALTERNATING SACRIFICIAL LAYER MATERIALS FOR MECHANICALLY STABLE 2D...
- Publication number 20240006481
- Publication date Jan 4, 2024
- Intel Corporation
- Chelsey DOROW
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACK-END-OF-LINE 2D MEMORY CELL
- Publication number 20240008290
- Publication date Jan 4, 2024
- Intel Corporation
- Chia-Ching LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ASSEMBLED MONOLAYER ON A DIELECTRIC FOR TRANSITION METAL DICHA...
- Publication number 20230420510
- Publication date Dec 28, 2023
- Intel Corporation
- Carl H. NAYLOR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
2D LAYERED GATE OXIDE
- Publication number 20230420514
- Publication date Dec 28, 2023
- Intel Corporation
- Chelsey DOROW
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MICROELECTRONIC DIE WITH TWO DIMENSIONAL (2D) COMPLEMENTARY METAL O...
- Publication number 20230420364
- Publication date Dec 28, 2023
- Intel Corporation
- Kevin P. O'Brien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED SINGLE CRYSTAL TRANSITION-METAL DICHALCOGENIDE USING SEEDED...
- Publication number 20230420511
- Publication date Dec 28, 2023
- Intel Corporation
- Carl H. NAYLOR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TWO-DIMENSIONAL PMOS DEVICES FOR PROVIDING CMOS IN BACK-END LAYERS...
- Publication number 20230411390
- Publication date Dec 21, 2023
- Intel Corporation
- Kevin P. O'Brien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNOLOGIES FOR TRANSISTORS WITH A FERROELECTRIC GATE DIELECTRIC
- Publication number 20230352584
- Publication date Nov 2, 2023
- Dmitri Evgenievich Nikonov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LAYERED 2D SEMICONDUCTORS
- Publication number 20230317783
- Publication date Oct 5, 2023
- Intel Corporation
- Kirby MAXEY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PIEZO-RESISTIVE TRANSISTOR BASED RESONATOR WITH ANTI-FERROELECTRIC...
- Publication number 20230253475
- Publication date Aug 10, 2023
- Intel Corporation
- Tanay Gosavi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PIEZO-RESISTIVE TRANSISTOR BASED RESONATOR WITH FERROELECTRIC GATE...
- Publication number 20230238444
- Publication date Jul 27, 2023
- Intel Corporation
- Tanay Gosavi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC OXIDE- AND FERROELECTRIC MONOCHALCOGENIDE-BASED CAPAC...
- Publication number 20230200079
- Publication date Jun 22, 2023
- Intel Corporation
- Chia-Ching Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUITS WITH MAX OR MX CONDUCTIVE MATERIALS
- Publication number 20230197836
- Publication date Jun 22, 2023
- Intel Corporation
- Carl Hugo Naylor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL CHALCOGENIDE TRANSISTORS WITH DEFECTED CHANNEL TRANSITION LAYER
- Publication number 20230197860
- Publication date Jun 22, 2023
- Intel Corporation
- Carl H. Naylor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYNTHETIC ANTIFERROMAGNET-BASED PROBABILISTIC COMPUTING DEVICES
- Publication number 20230189659
- Publication date Jun 15, 2023
- Intel Corporation
- Punyashloka Debashis
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
OXIDE LAYER DOPING ON A SUB CHANNEL OF A TRANSISTOR STRUCTURE
- Publication number 20230111323
- Publication date Apr 13, 2023
- Intel Corporation
- Rahul RAMAMURTHY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THIN FILM TRANSISTORS HAVING CMOS FUNCTIONALITY INTEGRATED WITH 2D...
- Publication number 20230113614
- Publication date Apr 13, 2023
- Intel Corporation
- Kevin P. O'BRIEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES WITH TRANSITION METAL DICHALCOGENI...
- Publication number 20230101604
- Publication date Mar 30, 2023
- Intel Corporation
- Ashish Verma PENUMATCHA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED 2D CMOS WITH INTER METAL LAYERS
- Publication number 20230101760
- Publication date Mar 30, 2023
- Intel Corporation
- Kevin P. O'BRIEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THIN FILM TRANSISTORS HAVING MULTI-LAYER GATE DIELECTRIC STRUCTURES...
- Publication number 20230101370
- Publication date Mar 30, 2023
- Intel Corporation
- Sudarat LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURES WITH GRAPHENE CONTACTS
- Publication number 20230102695
- Publication date Mar 30, 2023
- Intel Corporation
- Carl H. NAYLOR
- H01 - BASIC ELECTRIC ELEMENTS

Ashish Verma Penumatcha

Person

Patents Grantslast 30 patents

Transition metal dichalcogenide nanowires and methods of fabrication

Field-effect transistor (FET) with self-aligned ferroelectric capac...

Piezo-resistive transistor based resonator with anti-ferroelectric...

Transition metal dichalcogenide (TMD) layer stack for transistor ap...

Piezo-resistive transistor based resonator with ferroelectric gate...

Memory cells with ferroelectric capacitors separate from transistor...

TMD inverted nanowire integration

Charge-transfer spacers for stacked nanoribbon 2D transistors

MFM capacitor and process for forming such

MFM capacitor with multilayered oxides and metals and processes for...

Multilayer high-k gate dielectric for a high performance logic tran...

Gate stacks for FinFET transistors

FeFET with embedded conductive sidewall spacers and process for for...

Piezo-resistive transistor based resonator with anti-ferroelectric...

Ferroelectric transistors to store multiple states of resistances f...

Transistor device with (anti)ferroelectric spacer structures

Piezo-resistive transistor based resonator with ferroelectric gate...

Transistor device with variously conformal gate dielectric layers

Ferroelectric resonator

Ultra-dense ferroelectric memory with self-aligned patterning

Relaxor ferroelectric capacitors and methods of fabrication

Memory devices based on capacitors with built-in electric field

Vertical memory control circuitry located in interconnect layers

Integrated circuit device with a two-dimensional semiconductor mate...

Patents Applicationslast 30 patents

SEEDED GROWTH FOR 2D NANORIBBON TRANSISTORS

BEOL CONTACT METALS FOR 2D TRANSISTORS

TRANSISTOR STRUCTURES HAVING A DOPING LAYER ON TRANSITION METAL DIC...

TRANSISTOR WITH CHANNEL MATERIAL IN A STACK WITH INSULATOR MATERIAL...

PASSIVATION OF CRYSTALLINE SUBSTRATE FOR METAL CHALCOGEN MATERIAL S...

2D NANORIBBONS UTILIZING SILICON SCAFFOLDING

TMD INVERTED NANOWIRE INTEGRATION

BACK-END-OF-LINE 2D TRANSISTOR

CONTACT ARCHITECTURE FOR 2D STACKED NANORIBBON TRANSISTOR

ALTERNATING SACRIFICIAL LAYER MATERIALS FOR MECHANICALLY STABLE 2D...

BACK-END-OF-LINE 2D MEMORY CELL

SELF-ASSEMBLED MONOLAYER ON A DIELECTRIC FOR TRANSITION METAL DICHA...

2D LAYERED GATE OXIDE

MICROELECTRONIC DIE WITH TWO DIMENSIONAL (2D) COMPLEMENTARY METAL O...

STACKED SINGLE CRYSTAL TRANSITION-METAL DICHALCOGENIDE USING SEEDED...

TWO-DIMENSIONAL PMOS DEVICES FOR PROVIDING CMOS IN BACK-END LAYERS...

TECHNOLOGIES FOR TRANSISTORS WITH A FERROELECTRIC GATE DIELECTRIC

LAYERED 2D SEMICONDUCTORS

PIEZO-RESISTIVE TRANSISTOR BASED RESONATOR WITH ANTI-FERROELECTRIC...

PIEZO-RESISTIVE TRANSISTOR BASED RESONATOR WITH FERROELECTRIC GATE...

FERROELECTRIC OXIDE- AND FERROELECTRIC MONOCHALCOGENIDE-BASED CAPAC...

INTEGRATED CIRCUITS WITH MAX OR MX CONDUCTIVE MATERIALS

METAL CHALCOGENIDE TRANSISTORS WITH DEFECTED CHANNEL TRANSITION LAYER

SYNTHETIC ANTIFERROMAGNET-BASED PROBABILISTIC COMPUTING DEVICES

OXIDE LAYER DOPING ON A SUB CHANNEL OF A TRANSISTOR STRUCTURE

THIN FILM TRANSISTORS HAVING CMOS FUNCTIONALITY INTEGRATED WITH 2D...

THREE-DIMENSIONAL MEMORY DEVICES WITH TRANSITION METAL DICHALCOGENI...

STACKED 2D CMOS WITH INTER METAL LAYERS

THIN FILM TRANSISTORS HAVING MULTI-LAYER GATE DIELECTRIC STRUCTURES...

INTEGRATED CIRCUIT STRUCTURES WITH GRAPHENE CONTACTS