Atsuhiro Fujii

Person

Tokyo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Ion implantation apparatus, ion implantation method and semiconduct...
- Patent number 6,140,656
- Issue date Oct 31, 2000
- Mitsubishi Denki Kabushiki Kaisha
- Atsuhiro Fujii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Jig for use in CVD and method of manufacturing jig for use in CVD
- Patent number 5,882,418
- Issue date Mar 16, 1999
- Mitsubishi Denki Kabushiki Kaisha
- Atsuhiro Fujii
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of treating a substrate wherein the flow rates of the treatm...
- Patent number 5,262,356
- Issue date Nov 16, 1993
- Mitsubishi Denki Kabushiki Kaisha
- Atsuhiro Fujii
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of manufacturing semiconductor device including interlaying...
- Patent number 5,250,468
- Issue date Oct 5, 1993
- Mitsubishi Denki Kabushiki Kaisha
- Masazumi Matsuura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including interlayer insulating film
- Patent number 5,132,774
- Issue date Jul 21, 1992
- Mitsubishi Denki Kabushiki Kaisha
- Masazumi Matsuura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device with a planar interl...
- Patent number 5,077,238
- Issue date Dec 31, 1991
- Mitsubishi Denki Kabushiki Kaisha
- Atsuhiro Fujii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ozone generating method
- Patent number 5,047,127
- Issue date Sep 10, 1991
- Mitsubishi Denki Kabushiki Kaisha
- Isao Tottori
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Semiconductor device having a plurality of conductive layers and ma...
- Patent number 4,984,055
- Issue date Jan 8, 1991
- Mitsubishi Denki Kabushiki Kaisha
- Yoshinori Okumura
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
DEUTERIUM RECOVERY METHOD AND DEUTERIUM RECOVERY EQUIPMENT
- Publication number 20240239655
- Publication date Jul 18, 2024
- Taiyo Nippon Sanso Corporation
- Naoki KOMURA
- C01 - INORGANIC CHEMISTRY

Atsuhiro Fujii

Person

Patents Grantslast 30 patents

Ion implantation apparatus, ion implantation method and semiconduct...

Jig for use in CVD and method of manufacturing jig for use in CVD

Method of treating a substrate wherein the flow rates of the treatm...

Method of manufacturing semiconductor device including interlaying...

Semiconductor device including interlayer insulating film

Method of manufacturing a semiconductor device with a planar interl...

Ozone generating method

Semiconductor device having a plurality of conductive layers and ma...

Patents Applicationslast 30 patents

DEUTERIUM RECOVERY METHOD AND DEUTERIUM RECOVERY EQUIPMENT