Atsuhiro Tsukune

Person

Kanagawa, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device having insulating layers containing oxygen and...
- Patent number 9,704,740
- Issue date Jul 11, 2017
- Fujitsu Semiconductor Limited
- Hirosato Ochimizu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device fabrication method
- Patent number 8,916,468
- Issue date Dec 23, 2014
- Fujitsu Semiconductor Limited
- Hirosato Ochimizu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having insulating layers containing oxygen and...
- Patent number 8,836,126
- Issue date Sep 16, 2014
- Fujitsu Semiconductor Limited
- Hirosato Ochimizu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 6,635,523
- Issue date Oct 21, 2003
- Fujitsu Limited
- Yuji Uchiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making ferroelectric film with protective cover film agai...
- Patent number 6,344,363
- Issue date Feb 5, 2002
- Fujitsu Limited
- Rika Shinohara
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor device manufacturing apparatus and its cleaning method
- Patent number 5,609,721
- Issue date Mar 11, 1997
- Fujitsu Limited
- Atsuhiro Tsukune
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Graphite columnar heating body for semiconductor wafer heating
- Patent number 5,233,163
- Issue date Aug 3, 1993
- Fujitsu Limited
- Fumitake Mieno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Chemical vapor deposition method using a plasma self-cleaning
- Patent number 5,041,311
- Issue date Aug 20, 1991
- Fujitsu Limited
- Atsuhiro Tsukune
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of selectively depositing tungsten upon a semiconductor subs...
- Patent number 4,804,560
- Issue date Feb 14, 1989
- Fujitsu Limited
- Yoshimi Shioya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for the formation of phosphosilicate glass coating
- Patent number 4,781,945
- Issue date Nov 1, 1988
- Fujitsu Limited
- Masahide Nishimura
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE HAVING INSULATING LAYERS CONTAINING OXYGEN AND...
- Publication number 20170047246
- Publication date Feb 16, 2017
- FUJITSU SEMICONDUCTOR LIMITED
- Hirosato OCHIMIZU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING INSULATING LAYERS CONTAINING OXYGEN AND...
- Publication number 20140353829
- Publication date Dec 4, 2014
- Hirosato OCHIMIZU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE FABRICATION METHOD
- Publication number 20130273701
- Publication date Oct 17, 2013
- Hirosato Ochimizu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20100038792
- Publication date Feb 18, 2010
- Fujitsu Microelectronics Limited
- Hirosato OCHIMIZU
- H01 - BASIC ELECTRIC ELEMENTS

Atsuhiro Tsukune

Person

Patents Grantslast 30 patents

Semiconductor device having insulating layers containing oxygen and...

Semiconductor device fabrication method

Semiconductor device having insulating layers containing oxygen and...

Semiconductor device and method of manufacturing the same

Method of making ferroelectric film with protective cover film agai...

Semiconductor device manufacturing apparatus and its cleaning method

Graphite columnar heating body for semiconductor wafer heating

Chemical vapor deposition method using a plasma self-cleaning

Method of selectively depositing tungsten upon a semiconductor subs...

Process for the formation of phosphosilicate glass coating

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE HAVING INSULATING LAYERS CONTAINING OXYGEN AND...

SEMICONDUCTOR DEVICE HAVING INSULATING LAYERS CONTAINING OXYGEN AND...

SEMICONDUCTOR DEVICE FABRICATION METHOD

SEMICONDUCTOR DEVICE