Atsushi Azuma

Person

Yokohama-shi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device
- Patent number 7,880,237
- Issue date Feb 1, 2011
- Kabushiki Kaisha Toshiba
- Atsushi Azuma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device comprising buried channel region and method fo...
- Patent number 7,288,470
- Issue date Oct 30, 2007
- Kabushiki Kaisha Toshiba
- Satoshi Matsuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having gate electrode of stacked structure inc...
- Patent number 6,897,534
- Issue date May 24, 2005
- Kabushiki Kaisha Toshiba
- Kazuya Ohuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same including...
- Patent number 6,649,462
- Issue date Nov 18, 2003
- Kabushiki Kaisha Toshiba
- Atsushi Azuma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having gate electrode of stacked structure inc...
- Patent number 6,642,585
- Issue date Nov 4, 2003
- Kabushiki Kaisha Toshiba
- Kazuya Ohuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device comprising buried channel region
- Patent number 6,642,581
- Issue date Nov 4, 2003
- Kabushiki Kaisha Toshiba
- Satoshi Matsuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same including...
- Patent number 6,515,320
- Issue date Feb 4, 2003
- Kabushiki Kaisha Toshiba
- Atsushi Azuma
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20090140344
- Publication date Jun 4, 2009
- Kabushiki Kaisha Toshiba
- Atsushi Azuma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device comprising buried channel region and method fo...
- Publication number 20070184623
- Publication date Aug 9, 2007
- Kabushiki Kaisha Toshiba
- Satoshi Matsuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having gate electrode of staked structure incl...
- Publication number 20050189600
- Publication date Sep 1, 2005
- Kabushiki Kaisha Toshiba
- Kazuya Ohuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device comprising buried channel region and method fo...
- Publication number 20040084731
- Publication date May 6, 2004
- Kabushiki Kaisha Toshiba
- Satoshi Matsuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having gate electrode of stacked structure inc...
- Publication number 20040041213
- Publication date Mar 4, 2004
- KABUSHIKI KAISHA TOSHIBA
- Kazuya Ohuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of manufacturing the same
- Publication number 20030073273
- Publication date Apr 17, 2003
- Kabushiki Kaisha Toshiba
- Atsushi Azuma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20030022448
- Publication date Jan 30, 2003
- Kabushiki Kaisha Toshiba
- Atsushi Azuma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device comprising buried channel region and method fo...
- Publication number 20020142529
- Publication date Oct 3, 2002
- Satoshi Matsuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING GATE ELECTRODE OF STACKED STRUCTURE INC...
- Publication number 20020030234
- Publication date Mar 14, 2002
- KAZUYA OHUCHI
- H01 - BASIC ELECTRIC ELEMENTS

Atsushi Azuma

Person

Patents Grantslast 30 patents

Semiconductor device

Semiconductor device comprising buried channel region and method fo...

Semiconductor device having gate electrode of stacked structure inc...

Semiconductor device and method of manufacturing the same including...

Semiconductor device having gate electrode of stacked structure inc...

Semiconductor device comprising buried channel region

Semiconductor device and method of manufacturing the same including...

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE

Semiconductor device comprising buried channel region and method fo...

Semiconductor device having gate electrode of staked structure incl...

Semiconductor device comprising buried channel region and method fo...

Semiconductor device having gate electrode of stacked structure inc...

Semiconductor device and method of manufacturing the same

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

Semiconductor device comprising buried channel region and method fo...

SEMICONDUCTOR DEVICE HAVING GATE ELECTRODE OF STACKED STRUCTURE INC...