Atsushi ERA

Person

Tokyo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Method for producing photosemiconductor device
- Patent number 12,136,795
- Issue date Nov 5, 2024
- Mitsubishi Electric Corporation
- Atsushi Era
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing semiconductor device and semiconductor device
- Patent number 11,444,172
- Issue date Sep 13, 2022
- Mitsubishi Electric Corporation
- Atsushi Era
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing group III-V nitride semiconductor epitaxia...
- Patent number 10,199,218
- Issue date Feb 5, 2019
- Mitsubishi Electric Corporation
- Atsushi Era
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
GaN semiconductor device comprising carbon and iron
- Patent number 9,793,363
- Issue date Oct 17, 2017
- Mitsubishi Electric Corporation
- Atsushi Era
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN semiconductor device comprising carbon and iron
- Patent number 9,728,611
- Issue date Aug 8, 2017
- Mitsubishi Electric Corporation
- Atsushi Era
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor element
- Patent number 9,478,418
- Issue date Oct 25, 2016
- Mitsubishi Electric Corporation
- Atsushi Era
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of high electron mobility transistor
- Patent number 9,355,841
- Issue date May 31, 2016
- Mitsubishi Electric Corporation
- Takahiro Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR LASER DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCT...
- Publication number 20240380182
- Publication date Nov 14, 2024
- Mitsubishi Electric Corporation
- Atsushi ERA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL WAFER, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING...
- Publication number 20230054861
- Publication date Feb 23, 2023
- Mitsubishi Electric Corporation
- Atsushi ERA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING PHOTOSEMICONDUCTOR DEVICE
- Publication number 20220190548
- Publication date Jun 16, 2022
- Mitsubishi Electric Corporation
- Atsushi ERA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20220020870
- Publication date Jan 20, 2022
- Mitsubishi Electric Corporation
- Ryohei NONODA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
- Publication number 20200243668
- Publication date Jul 30, 2020
- Mitsubishi Electric Corporation
- Atsushi ERA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING GROUP III-V NITRIDE SEMICONDUCTOR EPITAXIA...
- Publication number 20180166271
- Publication date Jun 14, 2018
- Mitsubishi Electric Corporation
- Atsushi ERA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GaN SEMICONDUCTOR DEVICE COMPRISING CARBON AND IRON
- Publication number 20170301761
- Publication date Oct 19, 2017
- Mitsubishi Electric Corporation
- Atsushi ERA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20170117404
- Publication date Apr 27, 2017
- Mitsubishi Electric Corporation
- Atsushi ERA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD OF HIGH ELECTRON MOBILITY TRANSISTOR
- Publication number 20160071727
- Publication date Mar 10, 2016
- Mitsubishi Electric Corporation
- Takahiro YAMAMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR ELEMENT
- Publication number 20150348780
- Publication date Dec 3, 2015
- Mitsubishi Electric Corporation
- Atsushi ERA
- H01 - BASIC ELECTRIC ELEMENTS

Atsushi ERA

Person

Patents Grantslast 30 patents

Method for producing photosemiconductor device

Method for producing semiconductor device and semiconductor device

Method for manufacturing group III-V nitride semiconductor epitaxia...

GaN semiconductor device comprising carbon and iron

GaN semiconductor device comprising carbon and iron

Method of manufacturing semiconductor element

Manufacturing method of high electron mobility transistor

Patents Applicationslast 30 patents

SEMICONDUCTOR LASER DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCT...

EPITAXIAL WAFER, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING...

METHOD FOR PRODUCING PHOTOSEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

METHOD FOR PRODUCING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE

METHOD FOR MANUFACTURING GROUP III-V NITRIDE SEMICONDUCTOR EPITAXIA...

GaN SEMICONDUCTOR DEVICE COMPRISING CARBON AND IRON

SEMICONDUCTOR DEVICE

MANUFACTURING METHOD OF HIGH ELECTRON MOBILITY TRANSISTOR

METHOD OF MANUFACTURING SEMICONDUCTOR ELEMENT