Atsushi Ikari

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Tsukuba, JP

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Patents Grantslast 30 patents

Information Patent Grant
Method for production of dislocation-free silicon single crystal
- Patent number 6,080,237
- Issue date Jun 27, 2000
- Nippon Steel Corporation
- Toshio Iwasaki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Growth of silicon crystal from melt having extraordinary eddy flows...
- Patent number 5,704,974
- Issue date Jan 6, 1998
- Research Development Corporation of Japan
- Koji Izunome
- C30 - CRYSTAL GROWTH
Information Patent Grant
Growth of silicon single crystal having uniform impurity distributi...
- Patent number 5,700,320
- Issue date Dec 23, 1997
- Research Development Corporation of Japan
- Koji Izunome
- C30 - CRYSTAL GROWTH
Information Patent Grant
Growth of silicon single crystal
- Patent number 5,683,504
- Issue date Nov 4, 1997
- Research Development Corporation of Japan
- Koji Izunome
- C30 - CRYSTAL GROWTH