Atsushi Itsuki

Person

Iwaki-shi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Hafnium-containing material for film formation, method for producin...
- Patent number 7,196,211
- Issue date Mar 27, 2007
- Mitsubishi Materials Corporation
- Atsushi Itsuki
- C07 - ORGANIC CHEMISTRY
Information Patent Grant
Organometallic compound, its synthesis method, and solution raw mat...
- Patent number 7,148,367
- Issue date Dec 12, 2006
- Mitsubishi Materials Corporation
- Atsushi Itsuki
- C07 - ORGANIC CHEMISTRY
Information Patent Grant
Solution raw material for forming composite oxide type dielectric t...
- Patent number 6,485,554
- Issue date Nov 26, 2002
- Mitsubishi Materials Corporation
- Atsushi Itsuki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Organic titanium compound suitable for MOCVD
- Patent number 6,355,097
- Issue date Mar 12, 2002
- Mitsubishi Materials Corporation
- Atsushi Itsuki
- C07 - ORGANIC CHEMISTRY
Information Patent Grant
Organic copper compound, liquid mixture containing the compound, an...
- Patent number 6,310,228
- Issue date Oct 30, 2001
- Mitsubishi Materials Corporation
- Atsushi Itsuki
- C07 - ORGANIC CHEMISTRY
Information Patent Grant
Organic titanium compound suitable for MOCVD
- Patent number 6,280,518
- Issue date Aug 28, 2001
- Mitsubishi Materials Corporation
- Atsushi Itsuki
- C07 - ORGANIC CHEMISTRY
Information Patent Grant
High-purity TI complexes, methods for producing the same and BST fi...
- Patent number 5,767,302
- Issue date Jun 16, 1998
- Mitsubishi Materials Corporation
- Katsumi Ogi
- C07 - ORGANIC CHEMISTRY
Information Patent Grant
Composition for formation of electrode pattern
- Patent number 5,696,384
- Issue date Dec 9, 1997
- Mitsubishi Materials Corporation
- Katsumi Ogi
- C07 - ORGANIC CHEMISTRY

Patents Applicationslast 30 patents

Information Patent Application
Raw Material Solution for Metal Organic Chemical Vapor Deposition M...
- Publication number 20080299312
- Publication date Dec 4, 2008
- Atsushi Itsuki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Raw Material Solution for Metal Organic Chemical Vapor Deposition a...
- Publication number 20080072792
- Publication date Mar 27, 2008
- MITSUBISHI MATERIALS CORPORATION
- Akio Yanagisawa
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Capacitor Film Forming Material
- Publication number 20070231251
- Publication date Oct 4, 2007
- MITSUBISHI MATERIALS CORPORATION
- Atsushi Itsuki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Hafnium-containing material for film formation, method for producin...
- Publication number 20050065358
- Publication date Mar 24, 2005
- Atsushi Itsuki
- C07 - ORGANIC CHEMISTRY
Information Patent Application
Organometallic compound, its synthesis method, and solution raw mat...
- Publication number 20040210071
- Publication date Oct 21, 2004
- MITSUBISHI MATERIALS CORPORATION
- Atsushi Itsuki
- C07 - ORGANIC CHEMISTRY
Information Patent Application
Method of forming Si-containing thin film
- Publication number 20040203255
- Publication date Oct 14, 2004
- MITSUBISHI MATERIALS CORPORATION
- Atsushi Itsuki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Novel organic titanium compound suitable for MOCVD
- Publication number 20010050028
- Publication date Dec 13, 2001
- MITSUBISHI MATERIALS CORPORATION
- Atsushi Itsuki
- C07 - ORGANIC CHEMISTRY

Atsushi Itsuki

Person

Patents Grantslast 30 patents

Hafnium-containing material for film formation, method for producin...

Organometallic compound, its synthesis method, and solution raw mat...

Solution raw material for forming composite oxide type dielectric t...

Organic titanium compound suitable for MOCVD

Organic copper compound, liquid mixture containing the compound, an...

Organic titanium compound suitable for MOCVD

High-purity TI complexes, methods for producing the same and BST fi...

Composition for formation of electrode pattern

Patents Applicationslast 30 patents

Raw Material Solution for Metal Organic Chemical Vapor Deposition M...

Raw Material Solution for Metal Organic Chemical Vapor Deposition a...

Capacitor Film Forming Material

Hafnium-containing material for film formation, method for producin...

Organometallic compound, its synthesis method, and solution raw mat...

Method of forming Si-containing thin film

Novel organic titanium compound suitable for MOCVD