Atsushi Kamata

Person

Yokohama, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Composite material substrate for solar cells, and solar cell
- Patent number 6,121,540
- Issue date Sep 19, 2000
- Kabushiki Kaisha Toshiba
- Hiromitsu Takeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming polycrystalline silicon thin layer
- Patent number 6,086,945
- Issue date Jul 11, 2000
- Kabushiki Kaisha Toshiba
- Atsushi Kamata
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of forming semiconductor thin film and method of fabricating...
- Patent number 5,866,471
- Issue date Feb 2, 1999
- Kabushiki Kaisha Toshiba
- Tatsuro Beppu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light-emitting semiconductor device
- Patent number 5,696,389
- Issue date Dec 9, 1997
- Kabushiki Kaisha Toshiba
- Masayuki Ishikawa
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Electroluminescent semiconductor device having chalcogenide layer a...
- Patent number 5,324,963
- Issue date Jun 28, 1994
- Kabushiki Kaisha Toshiba
- Atsushi Kamata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optical semiconductor device
- Patent number 5,281,831
- Issue date Jan 25, 1994
- Kabushiki Kaisha Toshiba
- Tsutomu Uemoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
P-type II-VI compound semiconductor doped
- Patent number 5,150,191
- Issue date Sep 22, 1992
- Kabushiki Kaisha Toshiba
- Nawoto Motegi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor light emitting device using group I and group VII dop...
- Patent number 4,868,615
- Issue date Sep 19, 1989
- Kabushiki Kaisha Toshiba
- Atsushi Kamata
- H01 - BASIC ELECTRIC ELEMENTS

Atsushi Kamata

Person

Patents Grantslast 30 patents

Composite material substrate for solar cells, and solar cell

Method of forming polycrystalline silicon thin layer

Method of forming semiconductor thin film and method of fabricating...

Light-emitting semiconductor device

Electroluminescent semiconductor device having chalcogenide layer a...

Optical semiconductor device

P-type II-VI compound semiconductor doped

Semiconductor light emitting device using group I and group VII dop...