Atsushi Kinoshita

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Hyogo, JP

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Patents Grantslast 30 patents

Information Patent Grant
Bipolar transistor formed by a high energy ion implantation method
- Patent number 5,856,218
- Issue date Jan 5, 1999
- Mitsubishi Denki Kabushiki Kaisha
- Atsushi Kinoshita
- H01 - BASIC ELECTRIC ELEMENTS