Atsushi Nakagawa

Person

Kamifukuoka, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Nitride semiconductor device and manufacturing method thereof
- Patent number 7,635,877
- Issue date Dec 22, 2009
- New Japan Radio Co., Ltd.
- Eiji Waki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing nitride semiconductor device
- Patent number 7,601,573
- Issue date Oct 13, 2009
- New Japan Radio Co., Ltd.
- Atsushi Nakagawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device and manufacturing method thereof
- Patent number 7,352,017
- Issue date Apr 1, 2008
- New Japan Radio Co., Ltd.
- Atsushi Nakagawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device
- Patent number 7,304,330
- Issue date Dec 4, 2007
- New Japan Radio Co., Ltd.
- Atsushi Nakagawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gunn diode and method of manufacturing the same
- Patent number 6,686,647
- Issue date Feb 3, 2004
- New Japan Radio Co., Ltd.,
- Chikao Kimura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gunn diode, NRD guide Gunn oscillator, fabricating method of Gunn d...
- Patent number 6,514,832
- Issue date Feb 4, 2003
- New Japan Radio Co., Ltd.
- Atsushi Nakagawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gunn diode, NRD guide gunn oscillator, fabricating method of gunn d...
- Patent number 6,426,511
- Issue date Jul 30, 2002
- New Japan Radio Co., Ltd.
- Atsushi Nakagawa
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
NRD guide Gunn oscillator
- Patent number 6,369,663
- Issue date Apr 9, 2002
- New Japan Radio Co., Ltd.
- Atsushi Nakagawa
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Gunn diode, NRD guide gunn oscillator, fabricating method of gunn d...
- Patent number 6,344,658
- Issue date Feb 5, 2002
- New Japan Radio Co., Ltd.
- Atsushi Nakagawa
- H03 - BASIC ELECTRONIC CIRCUITRY

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR PRODUCING NITRIDE SEMICONDUCTOR DEVICE
- Publication number 20080026514
- Publication date Jan 31, 2008
- Atsushi Nakagawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nitride semiconductor device and manufacturing method thereof
- Publication number 20050236643
- Publication date Oct 27, 2005
- Atsushi Nakagawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nitride semiconductor device and manufacturing method thereof
- Publication number 20050236646
- Publication date Oct 27, 2005
- Eiji Waki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nitride semiconductor device and production process thereof
- Publication number 20050116248
- Publication date Jun 2, 2005
- Atsushi Nakagawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gunn diode and method of manufacturing the same
- Publication number 20020185709
- Publication date Dec 12, 2002
- NEW JAPAN RADIO CO., LTD.
- Chikao Kimura
- H01 - BASIC ELECTRIC ELEMENTS

Atsushi Nakagawa

Person

Patents Grantslast 30 patents

Nitride semiconductor device and manufacturing method thereof

Method for producing nitride semiconductor device

Nitride semiconductor device and manufacturing method thereof

Nitride semiconductor device

Gunn diode and method of manufacturing the same

Gunn diode, NRD guide Gunn oscillator, fabricating method of Gunn d...

Gunn diode, NRD guide gunn oscillator, fabricating method of gunn d...

NRD guide Gunn oscillator

Gunn diode, NRD guide gunn oscillator, fabricating method of gunn d...

Patents Applicationslast 30 patents

METHOD FOR PRODUCING NITRIDE SEMICONDUCTOR DEVICE

Nitride semiconductor device and manufacturing method thereof

Nitride semiconductor device and manufacturing method thereof

Nitride semiconductor device and production process thereof

Gunn diode and method of manufacturing the same