Atsushi Tsuboi

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Patents Grantslast 30 patents

Information Patent Grant
Fabrication process flow of dielectric layer for isolation of nano-...
- Patent number 11,605,712
- Issue date Mar 14, 2023
- Tokyo Electron Limited
- Shimpei Yamaguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device utilizing a side wall to prevent deterioration...
- Patent number 6,528,881
- Issue date Mar 4, 2003
- NEC Corporation
- Atsushi Tsuboi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS type semiconductor device and manufacturing method thereof
- Patent number 6,413,841
- Issue date Jul 2, 2002
- NEC Corporation
- Atsushi Tsuboi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device having multilevel inte...
- Patent number 5,726,098
- Issue date Mar 10, 1998
- NEC Corporation
- Atsushi Tsuboi
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20220199463
- Publication date Jun 23, 2022
- TOKYO ELECTRON LIMITED
- Shimpei YAMAGUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION PROCESS FLOW OF DIELECTRIC LAYER FOR ISOLATION OF NANO-...
- Publication number 20210375684
- Publication date Dec 2, 2021
- TOKYO ELECTRON LIMITED
- Shimpei YAMAGUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUBSTRATE PROCESSING METHOD FOR FORMING INNER SPACERS IN A NANO-SHE...
- Publication number 20210376123
- Publication date Dec 2, 2021
- TOKYO ELECTRON LIMITED
- Shimpei YAMAGUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method for manufacturing the same
- Publication number 20030104686
- Publication date Jun 5, 2003
- NEC Corporation
- Atsushi Tsuboi
- H01 - BASIC ELECTRIC ELEMENTS