Atsushi Yagishita

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Somers, NY, US

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device having fins FET and manufacturing method thereof
- Patent number 7,820,551
- Issue date Oct 26, 2010
- Kabushiki Kaisha Toshiba
- Atsushi Yagishita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET pMOS double gate semiconductor device with uniaxial tensile...
- Patent number 7,755,104
- Issue date Jul 13, 2010
- Kabushiki Kaisha Toshiba
- Atsushi Yagishita
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Semiconductor device having fins FET and manufacturing method thereof
- Publication number 20110012201
- Publication date Jan 20, 2011
- Kabushiki Kaisha Toshiba
- Atsushi Yagishita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING FINS FET AND MANUFACTURING METHOD THEREOF
- Publication number 20080191271
- Publication date Aug 14, 2008
- Atsushi YAGISHITA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of manufacturing the same
- Publication number 20080006884
- Publication date Jan 10, 2008
- Atsushi Yagishita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor memory device and method of manufacturing the same
- Publication number 20070290223
- Publication date Dec 20, 2007
- Atsushi Yagishita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and manufacturing method for semiconductor device
- Publication number 20070252211
- Publication date Nov 1, 2007
- Atsushi Yagishita
- H01 - BASIC ELECTRIC ELEMENTS