Atsuya AKIBA

Person

Kariya-shi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Silicon carbide semiconductor device and manufacturing method therefor
- Patent number 10,784,335
- Issue date Sep 22, 2020
- Denso Corporation
- Yuichi Takeuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device
- Patent number 10,714,611
- Issue date Jul 14, 2020
- Denso Corporation
- Yuichi Takeuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compound semiconductor device and production method for the same
- Patent number 10,643,851
- Issue date May 5, 2020
- Denso Corporation
- Yuichi Takeuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compound semiconductor device and method for manufacturing the same
- Patent number 10,593,750
- Issue date Mar 17, 2020
- Denso Corporation
- Yuichi Takeuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing compound semiconductor device and compound...
- Patent number 10,580,851
- Issue date Mar 3, 2020
- Denso Corporation
- Yuichi Takeuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing same
- Patent number 10,134,593
- Issue date Nov 20, 2018
- Denso Corporation
- Takeshi Endo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Schottky barrier diode and method for manufacturing the same
- Patent number 9,825,123
- Issue date Nov 21, 2017
- Toyota Jidosha Kabushiki Kaisha
- Tatsuji Nagaoka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor incorporating a Schottky diode
- Patent number 9,391,190
- Issue date Jul 12, 2016
- Toyota Jidosha Kabushiki Kaisha
- Yukihiko Watanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 9,214,526
- Issue date Dec 15, 2015
- Toyota Jidosha Kabushiki Kaisha
- Hidefumi Takaya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing silicon carbide semiconductor device
- Patent number 7,989,231
- Issue date Aug 2, 2011
- Denso Corporation
- Atsuya Akiba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making silicon carbide semiconductor device
- Patent number 7,947,555
- Issue date May 24, 2011
- Denso Corporation
- Atsuya Akiba
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR
- Publication number 20190386096
- Publication date Dec 19, 2019
- Denso Corporation
- Yuichi TAKEUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE
- Publication number 20190334030
- Publication date Oct 31, 2019
- DENSO CORPORATION
- Yuichi TAKEUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING COMPOUND SEMICONDUCTOR DEVICE AND COMPOUND...
- Publication number 20190035883
- Publication date Jan 31, 2019
- Denso Corporation
- Yuichi TAKEUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPOUND SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20190035882
- Publication date Jan 31, 2019
- Denso Corporation
- Yuichi TAKEUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPOUND SEMICONDUCTOR DEVICE AND PRODUCTION METHOD FOR THE SAME
- Publication number 20190019680
- Publication date Jan 17, 2019
- Denso Corporation
- Yuichi TAKEUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
- Publication number 20180151366
- Publication date May 31, 2018
- Denso Corporation
- Takeshi ENDO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCHOTTKY BARRIER DIODE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20160181355
- Publication date Jun 23, 2016
- Toyota Jidosha Kabushiki Kaisha
- Tatsuji Nagaoka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20150171175
- Publication date Jun 18, 2015
- Toyota Jidosha Kabushiki Kaisha
- Hidefumi TAKAYA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR INCORPORATING A SCHOTTKY DIODE
- Publication number 20150021680
- Publication date Jan 22, 2015
- Toyota Jidosha Kabushiki Kaisha
- Yukihiko WATANABE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of manufacturing silicon carbide seminconductor device
- Publication number 20100233832
- Publication date Sep 16, 2010
- DENSO CORPORATION
- Atsuya Akiba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of making silicon carbide semiconductor device
- Publication number 20090280609
- Publication date Nov 12, 2009
- DENSO CORPORATION
- Atsuya Akiba
- H01 - BASIC ELECTRIC ELEMENTS

Atsuya AKIBA

Person

Patents Grantslast 30 patents

Silicon carbide semiconductor device and manufacturing method therefor

Silicon carbide semiconductor device

Compound semiconductor device and production method for the same

Compound semiconductor device and method for manufacturing the same

Method for manufacturing compound semiconductor device and compound...

Semiconductor device and method for manufacturing same

Schottky barrier diode and method for manufacturing the same

Field effect transistor incorporating a Schottky diode

Semiconductor device

Method of manufacturing silicon carbide semiconductor device

Method of making silicon carbide semiconductor device

Patents Applicationslast 30 patents

SILICON CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

SILICON CARBIDE SEMICONDUCTOR DEVICE

METHOD FOR MANUFACTURING COMPOUND SEMICONDUCTOR DEVICE AND COMPOUND...

COMPOUND SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

COMPOUND SEMICONDUCTOR DEVICE AND PRODUCTION METHOD FOR THE SAME

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

SCHOTTKY BARRIER DIODE AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE

FIELD EFFECT TRANSISTOR INCORPORATING A SCHOTTKY DIODE

Method of manufacturing silicon carbide seminconductor device

Method of making silicon carbide semiconductor device