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NORMALLY-ON GAN HEMT INTEGRATION ON MONOLITHIC P-GAN INTEGRATED CIR...
- Publication number 20250142862
- Publication date May 1, 2025
- STMicroelectronics International N.V.
- Giovanni GIORGINO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IN SITU PLASMA TREATMENT BEFORE AL2O3 DEPOSITION FOR IMPROVED RON
- Publication number 20250142864
- Publication date May 1, 2025
- STMicroelectronics International N.V.
- Ferdinando IUCOLANO
Information Patent Application
ISOLATION OF P-GAN HEMT BY USE OF GATE RING
- Publication number 20250142865
- Publication date May 1, 2025
- STMicroelectronics International N.V.
- Aurore CONSTANT
- H01 - BASIC ELECTRIC ELEMENTS
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HEMT DEVICE HAVING AN IMPROVED CONDUCTIVITY AND MANUFACTURING PROCE...
- Publication number 20240405115
- Publication date Dec 5, 2024
- STMicroelectronics International N.V.
- Maria Eloisa CASTAGNA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HEMT DEVICE HAVING AN IMPROVED GATE STRUCTURE AND MANUFACTURING PRO...
- Publication number 20240332413
- Publication date Oct 3, 2024
- STMicroelectronics International N.V.
- Ferdinando IUCOLANO
- H01 - BASIC ELECTRIC ELEMENTS
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HEMT DEVICE HAVING A REDUCED ON-RESISTANCE AND MANUFACTURING PROCES...
- Publication number 20240304711
- Publication date Sep 12, 2024
- STMicroelectronics International N.V.
- Cristina TRINGALI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HEMT DEVICE HAVING IMPROVED ON-STATE PERFORMANCE AND MANUFACTURING...
- Publication number 20240304710
- Publication date Sep 12, 2024
- STMicroelectronics International N.V.
- Cristina TRINGALI
- H01 - BASIC ELECTRIC ELEMENTS
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HEMT DEVICE HAVING A REDUCED GATE LEAKAGE AND MANUFACTURING PROCESS...
- Publication number 20240304713
- Publication date Sep 12, 2024
- STMicroelectronics International N.V.
- Ferdinando IUCOLANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HEMT TRANSISTOR
- Publication number 20240274702
- Publication date Aug 15, 2024
- STMicroelectronics International N.V.
- Aurore CONSTANT
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
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- Publication number 20240266425
- Publication date Aug 8, 2024
- STMicroelectronics International N.V.
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- H01 - BASIC ELECTRIC ELEMENTS
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- Publication number 20240194763
- Publication date Jun 13, 2024
- STMicroelectronics International N.V.
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Patents Applicationslast 30 patents

NORMALLY-ON GAN HEMT INTEGRATION ON MONOLITHIC P-GAN INTEGRATED CIR...

IN SITU PLASMA TREATMENT BEFORE AL2O3 DEPOSITION FOR IMPROVED RON

ISOLATION OF P-GAN HEMT BY USE OF GATE RING

HEMT DEVICE HAVING AN IMPROVED CONDUCTIVITY AND MANUFACTURING PROCE...

HEMT DEVICE HAVING AN IMPROVED GATE STRUCTURE AND MANUFACTURING PRO...

HEMT DEVICE HAVING A REDUCED ON-RESISTANCE AND MANUFACTURING PROCES...

HEMT DEVICE HAVING IMPROVED ON-STATE PERFORMANCE AND MANUFACTURING...

HEMT DEVICE HAVING A REDUCED GATE LEAKAGE AND MANUFACTURING PROCESS...

HEMT TRANSISTOR

HEMT TRANSISTOR

HEMT TRANSISTOR