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Avinash K. Gupta
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Basking Ridge, NJ, US
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Patents Grants
last 30 patents
Information
Patent Grant
Large diameter silicon carbide single crystals and apparatus and me...
Patent number
11,905,618
Issue date
Feb 20, 2024
II-VI ADVANCED MATERIALS, LLC
Xueping Xu
C01 - INORGANIC CHEMISTRY
Information
Patent Grant
SiC single crystal sublimation growth apparatus
Patent number
11,761,117
Issue date
Sep 19, 2023
II-VI DELAWARE, INC.
Avinash Gupta
C30 - CRYSTAL GROWTH
Information
Patent Grant
SiC single crystal sublimation growth apparatus
Patent number
11,149,359
Issue date
Oct 19, 2021
II-VI DELAWARE, INC.
Avinash Gupta
C30 - CRYSTAL GROWTH
Information
Patent Grant
Large diameter silicon carbide single crystals and apparatus and me...
Patent number
11,035,054
Issue date
Jun 15, 2021
II-VI DELAWARE, INC.
Xueping Xu
C01 - INORGANIC CHEMISTRY
Information
Patent Grant
Vanadium compensated, SI SiC single crystals of NU and PI type and...
Patent number
RE48378
Issue date
Jan 5, 2021
II-VI DELAWARE, INC.
Ilya Zwieback
Information
Patent Grant
High quality silicon carbide crystals and method of making the same
Patent number
10,793,972
Issue date
Oct 6, 2020
II-VI DELAWARE, INC.
Xueping Xu
C30 - CRYSTAL GROWTH
Information
Patent Grant
SiC single crystal sublimation growth method and apparatus
Patent number
10,294,584
Issue date
May 21, 2019
II-VI Incorporated
Avinash K. Gupta
C30 - CRYSTAL GROWTH
Information
Patent Grant
Large diameter, high quality SiC single crystals, method and apparatus
Patent number
RE46315
Issue date
Feb 21, 2017
II-VI Incorporated
Ilya Zwieback
Information
Patent Grant
Method for synthesizing ultrahigh-purity silicon carbide
Patent number
9,388,509
Issue date
Jul 12, 2016
II-VI Incorporated
Ilya Zwieback
Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information
Patent Grant
Vanadium doped SiC single crystals and method thereof
Patent number
9,322,110
Issue date
Apr 26, 2016
II-VI Incorporated
Ilya Zwieback
C30 - CRYSTAL GROWTH
Information
Patent Grant
Vanadium compensated, SI SiC single crystals of NU and PI type and...
Patent number
9,090,989
Issue date
Jul 28, 2015
II-VI Incorporated
Ilya Zwieback
C30 - CRYSTAL GROWTH
Information
Patent Grant
Intra-cavity gettering of nitrogen in SiC crystal growth
Patent number
9,017,629
Issue date
Apr 28, 2015
II-VI Incorporated
Ilya Zwieback
C30 - CRYSTAL GROWTH
Information
Patent Grant
SiC single crystals with reduced dislocation density grown by step-...
Patent number
8,871,025
Issue date
Oct 28, 2014
II-VI Incorporated
Avinash Gupta
C30 - CRYSTAL GROWTH
Information
Patent Grant
Silicon carbide with low nitrogen content and method for preparation
Patent number
8,858,709
Issue date
Oct 14, 2014
II-VI Incorporated
Ilya Zwieback
C30 - CRYSTAL GROWTH
Information
Patent Grant
Large diameter, high quality SiC single crystals, method and apparatus
Patent number
8,741,413
Issue date
Jun 3, 2014
II-VI Incorporated
Ilya Zwieback
B28 - WORKING CEMENT, CLAY, OR STONE
Information
Patent Grant
Halosilane assisted PVT growth of SiC
Patent number
8,512,471
Issue date
Aug 20, 2013
II-VI Incorporated
Ilya Zwieback
C30 - CRYSTAL GROWTH
Information
Patent Grant
Silicon carbide single crystals with low boron content
Patent number
8,361,227
Issue date
Jan 29, 2013
II-VI Incorporated
Ilya Zwieback
C30 - CRYSTAL GROWTH
Information
Patent Grant
Guided diameter SiC sublimation growth with multi-layer growth guide
Patent number
8,313,720
Issue date
Nov 20, 2012
II-VI Incorporated
Ilya Zwieback
C30 - CRYSTAL GROWTH
Information
Patent Grant
System for forming SiC crystals having spatially uniform doping imp...
Patent number
8,216,369
Issue date
Jul 10, 2012
II-VI Incorporated
Avinash K. Gupta
Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information
Patent Grant
Method of annealing a sublimation grown crystal
Patent number
7,767,022
Issue date
Aug 3, 2010
II-VI Incorporated
Avinash K. Gupta
C30 - CRYSTAL GROWTH
Information
Patent Grant
Method of and system for forming SiC crystals having spatially unif...
Patent number
7,608,524
Issue date
Oct 27, 2009
II-VI Incorporated
Avinash K. Gupta
Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information
Patent Grant
Reduction of carbon inclusions in sublimation grown SiC single crys...
Patent number
7,547,360
Issue date
Jun 16, 2009
II-VI Incorporated
Avinash K. Gupta
C30 - CRYSTAL GROWTH
Patents Applications
last 30 patents
Information
Patent Application
LARGE DIAMETER SILICON CARBIDE SINGLE CRYSTALS AND APPARATUS AND ME...
Publication number
20240150931
Publication date
May 9, 2024
II-VI ADVANCED MATERIALS, LLC
Xueping XU
C30 - CRYSTAL GROWTH
Information
Patent Application
SiC Single Crystal Sublimation Growth Apparatus
Publication number
20220002906
Publication date
Jan 6, 2022
Avinash Gupta
C30 - CRYSTAL GROWTH
Information
Patent Application
LARGE DIAMETER SILICON CARBIDE SINGLE CRYSTALS AND APPARATUS AND ME...
Publication number
20210189591
Publication date
Jun 24, 2021
II-VI Delaware, Inc.
Xueping Xu
C30 - CRYSTAL GROWTH
Information
Patent Application
Large Diameter Silicon Carbide Single Crystals and Apparatus and Me...
Publication number
20190323145
Publication date
Oct 24, 2019
II-VI Incorporated
Xueping Xu
C01 - INORGANIC CHEMISTRY
Information
Patent Application
SiC Single Crystal Sublimation Growth Apparatus
Publication number
20190249332
Publication date
Aug 15, 2019
II-VI Incorporated
Avinash K. Gupta
C30 - CRYSTAL GROWTH
Information
Patent Application
Large Diameter Silicon Carbide Single Crystals and Apparatus and Me...
Publication number
20170321345
Publication date
Nov 9, 2017
II-VI Incorporated
Xueping Xu
C30 - CRYSTAL GROWTH
Information
Patent Application
Vanadium Doped SiC Single Crystals and Method Thereof
Publication number
20140234194
Publication date
Aug 21, 2014
II-VI Incorporated
Ilya Zwieback
C30 - CRYSTAL GROWTH
Information
Patent Application
Vanadium Compensated, SI SiC Single Crystals of NU and PI Type and...
Publication number
20130320275
Publication date
Dec 5, 2013
Ilya Zwieback
C30 - CRYSTAL GROWTH
Information
Patent Application
"Method for Synthesizing Ultrahigh-Purity Silicon Carbide"
Publication number
20130309496
Publication date
Nov 21, 2013
II-VI Incorporated
Ilya Zwieback
C30 - CRYSTAL GROWTH
Information
Patent Application
Large Diameter, High Quality SiC Single Crystals, Method and Apparatus
Publication number
20130280466
Publication date
Oct 24, 2013
Ilya Zwieback
C30 - CRYSTAL GROWTH
Information
Patent Application
SUBLIMATION GROWTH OF SIC SINGLE CRYSTALS
Publication number
20120285370
Publication date
Nov 15, 2012
II-VI Incorporated
Avinash K. Gupta
C30 - CRYSTAL GROWTH
Information
Patent Application
Halosilane Assisted PVT Growth of SiC
Publication number
20120225004
Publication date
Sep 6, 2012
II-VI Incorporated
Ilya Zwieback
C30 - CRYSTAL GROWTH
Information
Patent Application
SIC SINGLE CRYSTAL SUBLIMATION GROWTH METHOD AND APPARATUS
Publication number
20120103249
Publication date
May 3, 2012
II-VI Incorporated
Avinash K. Gupta
C30 - CRYSTAL GROWTH
Information
Patent Application
SiC Crystals Having Spatially Uniform Doping Impurities
Publication number
20110303884
Publication date
Dec 15, 2011
II-VI Incorporated
Avinash K. Gupta
C30 - CRYSTAL GROWTH
Information
Patent Application
GUIDED DIAMETER SiC SUBLIMATION GROWTH WITH MULTI-LAYER GROWTH GUIDE
Publication number
20100061914
Publication date
Mar 11, 2010
II-VI Incorporated
Ilya Zwieback
C30 - CRYSTAL GROWTH
Information
Patent Application
SIC SINGLE CRYSTALS WITH REDUCED DISLOCATION DENSITY GROWN BY STEP-...
Publication number
20100031877
Publication date
Feb 11, 2010
II-VI Incorporated
Avinash Gupta
C30 - CRYSTAL GROWTH
Information
Patent Application
System for Forming SiC Crystals Having Spatially Uniform Doping Imp...
Publication number
20100018455
Publication date
Jan 28, 2010
II-VI Incorporated
Avinash K. Gupta
C30 - CRYSTAL GROWTH
Information
Patent Application
Intra-Cavity Gettering of Nitrogen in Sic Crystal Growth
Publication number
20090169459
Publication date
Jul 2, 2009
II-VI Incorporated
Ilya Zwieback
C30 - CRYSTAL GROWTH
Information
Patent Application
Stabilizing 4H Polytype During Sublimation Growth Of SiC Single Cry...
Publication number
20090053125
Publication date
Feb 26, 2009
Il-VI Incorporated
Avinash K. Gupta
C30 - CRYSTAL GROWTH
Information
Patent Application
Low-Doped Semi-Insulating Sic Crystals and Method
Publication number
20080190355
Publication date
Aug 14, 2008
II-VI Incorporated
Jihong Chen
C30 - CRYSTAL GROWTH
Information
Patent Application
Reduction of carbon inclusions in sublimation grown SiC single crys...
Publication number
20080115719
Publication date
May 22, 2008
II-VI Incorporated
Avinash K. Gupta
C30 - CRYSTAL GROWTH
Information
Patent Application
Silicon carbide single crystals with low boron content
Publication number
20080072817
Publication date
Mar 27, 2008
II-VI Incorporated
Ilya Zwieback
C30 - CRYSTAL GROWTH
Information
Patent Application
Method of and system for forming SiC crystals having spatially unif...
Publication number
20060243984
Publication date
Nov 2, 2006
II-VI Incorporated
Avinash K. Gupta
C30 - CRYSTAL GROWTH