Ayman SHIBIB

Person

San Jose, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device having multiple gate pads
- Patent number 11,004,841
- Issue date May 11, 2021
- Vishay SIliconix, LLC
- Chanho Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-electron-mobility transistor with buried interconnect
- Patent number 10,665,711
- Issue date May 26, 2020
- Vishay SIliconix, LLC
- Ayman Shibib
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-electron-mobility transistor devices
- Patent number 10,651,303
- Issue date May 12, 2020
- Vishay SIliconix, LLC
- Ayman Shibib
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-electron-mobility transistor with buried interconnect
- Patent number 10,381,473
- Issue date Aug 13, 2019
- Vishay-Siliconix
- Ayman Shibib
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having multiple gate pads
- Patent number 10,256,227
- Issue date Apr 9, 2019
- Vishay-Siliconix
- Chanho Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-electron-mobility transistor devices
- Patent number 10,224,426
- Issue date Mar 5, 2019
- Vishay-Siliconix
- Ayman Shibib
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with non-uniform trench oxide layer
- Patent number 9,978,859
- Issue date May 22, 2018
- Vishay Siliconix
- Chanho Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with non-uniform trench oxide layer
- Patent number 9,673,314
- Issue date Jun 6, 2017
- Vishay Siliconix
- Chanho Park
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
HIGH-ELECTRON-MOBILITY TRANSISTOR WITH BURIED INTERCONNECT
- Publication number 20190312137
- Publication date Oct 10, 2019
- Vishay-Siliconix
- Ayman SHIBIB
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING MULTIPLE GATE PADS
- Publication number 20190237458
- Publication date Aug 1, 2019
- Vishay-Siliconix
- Chanho PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-ELECTRON-MOBILITY TRANSISTOR DEVICES
- Publication number 20190198651
- Publication date Jun 27, 2019
- Vishay-Siliconix
- Ayman SHIBIB
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-ELECTRON-MOBILITY TRANSISTOR DEVICES
- Publication number 20180158940
- Publication date Jun 7, 2018
- VISHAY-SILICONIX
- Ayman SHIBIB
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-ELECTRON-MOBILITY TRANSISTOR WITH BURIED INTERCONNECT
- Publication number 20180158942
- Publication date Jun 7, 2018
- VISHAY-SILICONIX
- Ayman SHIBIB
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING MULTIPLE GATE PADS
- Publication number 20170294432
- Publication date Oct 12, 2017
- VISHAY-SILICONIX
- Chanho PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH NON-UNIFORM TRENCH OXIDE LAYER
- Publication number 20170271498
- Publication date Sep 21, 2017
- VISHAY-SILICONIX
- Chanho PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH NON-UNIFORM TRENCH OXIDE LAYER
- Publication number 20170012118
- Publication date Jan 12, 2017
- VISHAY-SILICONIX
- Chanho PARK
- H01 - BASIC ELECTRIC ELEMENTS

Ayman SHIBIB

Person

Patents Grantslast 30 patents

Semiconductor device having multiple gate pads

High-electron-mobility transistor with buried interconnect

High-electron-mobility transistor devices

High-electron-mobility transistor with buried interconnect

Semiconductor device having multiple gate pads

High-electron-mobility transistor devices

Semiconductor device with non-uniform trench oxide layer

Semiconductor device with non-uniform trench oxide layer

Patents Applicationslast 30 patents

HIGH-ELECTRON-MOBILITY TRANSISTOR WITH BURIED INTERCONNECT

SEMICONDUCTOR DEVICE HAVING MULTIPLE GATE PADS

HIGH-ELECTRON-MOBILITY TRANSISTOR DEVICES

HIGH-ELECTRON-MOBILITY TRANSISTOR DEVICES

HIGH-ELECTRON-MOBILITY TRANSISTOR WITH BURIED INTERCONNECT

SEMICONDUCTOR DEVICE HAVING MULTIPLE GATE PADS

SEMICONDUCTOR DEVICE WITH NON-UNIFORM TRENCH OXIDE LAYER

SEMICONDUCTOR DEVICE WITH NON-UNIFORM TRENCH OXIDE LAYER