Ayumu Adachi

Person

Toyota-shi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Silicon carbide semiconductor film-forming apparatus and film-formi...
- Patent number 9,879,359
- Issue date Jan 30, 2018
- Denso Corporation
- Hiroaki Fujibayashi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Film-forming manufacturing apparatus and method
- Patent number 9,873,941
- Issue date Jan 23, 2018
- NuFlare Technology, Inc.
- Hideki Ito
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Film-forming apparatus and film-forming method
- Patent number 9,598,792
- Issue date Mar 21, 2017
- Nuflare Technology, Inc.
- Kunihiko Suzuki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Film formation apparatus and film formation method
- Patent number 9,570,337
- Issue date Feb 14, 2017
- NuFlare Technology, Inc.
- Hideki Ito
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Film formation apparatus and film formation method
- Patent number 9,518,322
- Issue date Dec 13, 2016
- NuFlare Technology, Inc.
- Hideki Ito
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Film-forming apparatus and film-forming method
- Patent number 9,273,412
- Issue date Mar 1, 2016
- Nuflare Technology, Inc.
- Kunihiko Suzuki
- C30 - CRYSTAL GROWTH
Information Patent Grant
SiC single crystal, SiC wafer, and semiconductor device
- Patent number 9,166,008
- Issue date Oct 20, 2015
- Kabushiki Kaisha Toyota Chuo Kenkyusho
- Itaru Gunjishima
- C30 - CRYSTAL GROWTH
Information Patent Grant
Manufacturing method of silicon carbide single crystal
- Patent number 9,145,622
- Issue date Sep 29, 2015
- Denso Corporation
- Yasushi Urakami
- C30 - CRYSTAL GROWTH
Information Patent Grant
SiC single crystal, production method therefor, SiC wafer and semic...
- Patent number 9,096,947
- Issue date Aug 4, 2015
- Kabushiki Kaisha Toyota Chuo Kenkyusho
- Itaru Gunjishima
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Manufacturing method of silicon carbide single crystal
- Patent number 9,051,663
- Issue date Jun 9, 2015
- Denso Corporation
- Yasushi Urakami
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide single crystal and manufacturing method of the same
- Patent number 9,053,834
- Issue date Jun 9, 2015
- Denso Corporation
- Fusao Hirose
- C30 - CRYSTAL GROWTH
Information Patent Grant
SiC single crystal, SiC wafer, and semiconductor device
- Patent number 9,048,102
- Issue date Jun 2, 2015
- Kabushiki Kaisha Toyota Chuo Kenkyusho
- Itaru Gunjishima
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor wafer manufacturing method, and semiconductor wafer
- Patent number 9,029,219
- Issue date May 12, 2015
- Kwansei Gakuin Educational Foundation
- Tadaaki Kaneko
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of manufacturing homogeneous silicon carbide single crystal...
- Patent number 8,936,682
- Issue date Jan 20, 2015
- Denso Corporation
- Yasushi Urakami
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
SILICON CARBIDE SEMICONDUCTOR FILM-FORMING APPARATUS AND FILM-FORMI...
- Publication number 20160138190
- Publication date May 19, 2016
- Denso Corporation
- Hiroaki FUJIBAYASHI
- C30 - CRYSTAL GROWTH
Information Patent Application
FILM-FORMING MANUFACTURING APPARATUS AND METHOD
- Publication number 20150329967
- Publication date Nov 19, 2015
- NuFlare Technology, Inc.
- Hideki ITO
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
FILM FORMATION APPARATUS AND FILM FORMATION METHOD
- Publication number 20150090693
- Publication date Apr 2, 2015
- NuFlare Technology, Inc.
- Hideki ITO
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SEMICONDUCTOR WAFER MANUFACTURING METHOD, AND SEMICONDUCTOR WAFER
- Publication number 20140319539
- Publication date Oct 30, 2014
- TOYO TANSO CO., LTD
- Tadaaki Kaneko
- C30 - CRYSTAL GROWTH
Information Patent Application
SIC SINGLE CRYSTAL, SIC WAFER, AND SEMICONDUCTOR DEVICE
- Publication number 20140291700
- Publication date Oct 2, 2014
- Itaru Gunjishima
- C30 - CRYSTAL GROWTH
Information Patent Application
FILM FORMATION APPARATUS AND FILM FORMATION METHOD
- Publication number 20140287539
- Publication date Sep 25, 2014
- Hideki ITO
- C30 - CRYSTAL GROWTH
Information Patent Application
SiC SINGLE CRYSTAL, PRODUCTION METHOD THEREFOR, SiC WAFER AND SEMIC...
- Publication number 20140091325
- Publication date Apr 3, 2014
- KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO
- Itaru Gunjishima
- C30 - CRYSTAL GROWTH
Information Patent Application
SIC SINGLE CRYSTAL, SIC WAFER, AND SEMICONDUCTOR DEVICE
- Publication number 20140027787
- Publication date Jan 30, 2014
- KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO
- Itaru Gunjishima
- C30 - CRYSTAL GROWTH
Information Patent Application
FILM-FORMING APPARATUS AND FILM-FORMING METHOD
- Publication number 20130152853
- Publication date Jun 20, 2013
- DENSO CORPORATION
- Kunihiko SUZUKI
- C30 - CRYSTAL GROWTH
Information Patent Application
FILM-FORMING APPARATUS AND FILM-FORMING METHOD
- Publication number 20120325138
- Publication date Dec 27, 2012
- NuFlare Techology, Inc.
- Kunihiko SUZUKI
- C30 - CRYSTAL GROWTH
Information Patent Application
MANUFACTURING METHOD OF SILICON CARBIDE SINGLE CRYSTAL
- Publication number 20120132132
- Publication date May 31, 2012
- TOYOTA JIDOSHA KABUSHIKI KAISHA
- Yasushi Urakami
- C30 - CRYSTAL GROWTH
Information Patent Application
MANUFACTURING METHOD OF SILICON CARBIDE SINGLE CRYSTAL
- Publication number 20120073495
- Publication date Mar 29, 2012
- DENSO CORPORATION
- Yasushi URAKAMI
- C30 - CRYSTAL GROWTH
Information Patent Application
MANUFACTURING METHOD OF SILICON CARBIDE SINGLE CRYSTAL
- Publication number 20120060751
- Publication date Mar 15, 2012
- DENSO CORPORATION
- Yasushi URAKAMI
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE SINGLE CRYSTAL AND MANUFACTURING METHOD OF THE SAME
- Publication number 20120025153
- Publication date Feb 2, 2012
- TOYOTA JIDOSHA KABUSHIKI KAISHA
- Fusao Hirose
- C30 - CRYSTAL GROWTH

Ayumu Adachi

Person

Patents Grantslast 30 patents

Silicon carbide semiconductor film-forming apparatus and film-formi...

Film-forming manufacturing apparatus and method

Film-forming apparatus and film-forming method

Film formation apparatus and film formation method

Film formation apparatus and film formation method

Film-forming apparatus and film-forming method

SiC single crystal, SiC wafer, and semiconductor device

Manufacturing method of silicon carbide single crystal

SiC single crystal, production method therefor, SiC wafer and semic...

Manufacturing method of silicon carbide single crystal

Silicon carbide single crystal and manufacturing method of the same

SiC single crystal, SiC wafer, and semiconductor device

Semiconductor wafer manufacturing method, and semiconductor wafer

Method of manufacturing homogeneous silicon carbide single crystal...

Patents Applicationslast 30 patents

SILICON CARBIDE SEMICONDUCTOR FILM-FORMING APPARATUS AND FILM-FORMI...

FILM-FORMING MANUFACTURING APPARATUS AND METHOD

FILM FORMATION APPARATUS AND FILM FORMATION METHOD

SEMICONDUCTOR WAFER MANUFACTURING METHOD, AND SEMICONDUCTOR WAFER

SIC SINGLE CRYSTAL, SIC WAFER, AND SEMICONDUCTOR DEVICE

FILM FORMATION APPARATUS AND FILM FORMATION METHOD

SiC SINGLE CRYSTAL, PRODUCTION METHOD THEREFOR, SiC WAFER AND SEMIC...

SIC SINGLE CRYSTAL, SIC WAFER, AND SEMICONDUCTOR DEVICE

FILM-FORMING APPARATUS AND FILM-FORMING METHOD

FILM-FORMING APPARATUS AND FILM-FORMING METHOD

MANUFACTURING METHOD OF SILICON CARBIDE SINGLE CRYSTAL

MANUFACTURING METHOD OF SILICON CARBIDE SINGLE CRYSTAL

MANUFACTURING METHOD OF SILICON CARBIDE SINGLE CRYSTAL

SILICON CARBIDE SINGLE CRYSTAL AND MANUFACTURING METHOD OF THE SAME