Bailey Jones

Person

Mohnton, PA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor structure formed using a sacrificial structure
- Patent number 7,741,702
- Issue date Jun 22, 2010
- Agere Systems Inc.
- Bailey R. Jones
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device and method using isotopically enriched silicon
- Patent number 7,494,888
- Issue date Feb 24, 2009
- Agere Systems Inc.
- Peter L. Gammel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metallization performance in electronic devices
- Patent number 7,339,274
- Issue date Mar 4, 2008
- Agere Systems Inc.
- John C. Desko, Jr.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure formed using a sacrificial structure
- Patent number 7,329,605
- Issue date Feb 12, 2008
- Agere Systems Inc.
- Bailey R. Jones
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal-oxide-semiconductor device with enhanced source electrode
- Patent number 7,126,193
- Issue date Oct 24, 2006
- Ciclon Semiconductor Device Corp.
- Frank A. Baiocchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhanced substrate contact for a semiconductor device
- Patent number 7,041,561
- Issue date May 9, 2006
- Agere Systems Inc.
- Frank A. Baiocchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making enhanced substrate contact for a semiconductor de...
- Patent number 6,987,052
- Issue date Jan 17, 2006
- Agere Systems Inc.
- Frank A. Baiocchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having an interconnect that electrically conne...
- Patent number 6,828,649
- Issue date Dec 7, 2004
- Agere Systems Inc.
- John C. Desko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field plated schottky diode and method of fabrication therefor
- Patent number 6,790,753
- Issue date Sep 14, 2004
- Agere Systems Inc.
- John Charles Desko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a buried layer for reducing latchup and...
- Patent number 6,737,311
- Issue date May 18, 2004
- Agere Systems Inc.
- John Desko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field plated Schottky diode
- Patent number 6,690,037
- Issue date Feb 10, 2004
- Agere Systems Inc.
- John Charles Desko
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Semiconductor Structure Formed Using a Sacrificial Structure
- Publication number 20080054481
- Publication date Mar 6, 2008
- Bailey R. Jones
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL-OXIDE-SEMICONDUCTOR DEVICE WITH ENHANCED SOURCE ELECTRODE
- Publication number 20070007593
- Publication date Jan 11, 2007
- CICLON SEMICONDUCTOR DEVICE CORP.
- Frank A. Baiocchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor structure formed using a sacrificial structure
- Publication number 20060226552
- Publication date Oct 12, 2006
- Bailey R. Jones
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Metallization performance in electronic devices
- Publication number 20060038294
- Publication date Feb 23, 2006
- John C. Desko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Device and method using isotopically enriched silicon
- Publication number 20050287786
- Publication date Dec 29, 2005
- Agere Systems Inc.
- Peter L. Gammel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Enhanced substrate contact for a semiconductor device
- Publication number 20050221563
- Publication date Oct 6, 2005
- Frank A. Baiocchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Enhanced substrate contact for a semiconductor device
- Publication number 20050093097
- Publication date May 5, 2005
- Frank A. Baiocchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Metal-oxide-semiconductor device with enhanced source electrode
- Publication number 20050077552
- Publication date Apr 14, 2005
- Frank A. Baiocchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device including an isolation trench having a dopant...
- Publication number 20040251511
- Publication date Dec 16, 2004
- Agere Systems Inc.
- John C. Desko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field plated schottky diode and method of fabrication therefor
- Publication number 20040089908
- Publication date May 13, 2004
- John Charles Desko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having an interconnect that electrically conne...
- Publication number 20030209776
- Publication date Nov 13, 2003
- Agere Systems Inc.
- John C. Desko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device including an isolation trench having a dopant...
- Publication number 20030211701
- Publication date Nov 13, 2003
- Agere Systems Inc.
- John C. Desko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of simultaneously manufacturing a metal oxide semiconductor...
- Publication number 20030141566
- Publication date Jul 31, 2003
- Agere Systems Guardian Corp.
- John C. Desko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having a buried layer for reducing latchup and...
- Publication number 20030057494
- Publication date Mar 27, 2003
- John Desko
- H01 - BASIC ELECTRIC ELEMENTS

Bailey Jones

Person

Patents Grantslast 30 patents

Semiconductor structure formed using a sacrificial structure

Device and method using isotopically enriched silicon

Metallization performance in electronic devices

Semiconductor structure formed using a sacrificial structure

Metal-oxide-semiconductor device with enhanced source electrode

Enhanced substrate contact for a semiconductor device

Method for making enhanced substrate contact for a semiconductor de...

Semiconductor device having an interconnect that electrically conne...

Field plated schottky diode and method of fabrication therefor

Semiconductor device having a buried layer for reducing latchup and...

Field plated Schottky diode

Patents Applicationslast 30 patents

Semiconductor Structure Formed Using a Sacrificial Structure

METAL-OXIDE-SEMICONDUCTOR DEVICE WITH ENHANCED SOURCE ELECTRODE

Semiconductor structure formed using a sacrificial structure

Metallization performance in electronic devices

Device and method using isotopically enriched silicon

Enhanced substrate contact for a semiconductor device

Enhanced substrate contact for a semiconductor device

Metal-oxide-semiconductor device with enhanced source electrode

Semiconductor device including an isolation trench having a dopant...

Field plated schottky diode and method of fabrication therefor

Semiconductor device having an interconnect that electrically conne...

Semiconductor device including an isolation trench having a dopant...

Method of simultaneously manufacturing a metal oxide semiconductor...

Semiconductor device having a buried layer for reducing latchup and...