Bao R. Yang

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I-Lan, TW

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Patents Grantslast 30 patents

Information Patent Grant
Uniformity improvement of high aspect ratio contact by stop layer
- Patent number 6,227,211
- Issue date May 8, 2001
- Taiwan Semiconductor Manufacturing Company
- Bao Ru Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for polymer removal after etching
- Patent number 5,904,570
- Issue date May 18, 1999
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Sen-Fu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Substrate isolation process to minimize junction leakage
- Patent number 5,763,316
- Issue date Jun 9, 1998
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Sen-Fu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of monitoring and controlling a silicon nitride etch step
- Patent number 5,639,342
- Issue date Jun 17, 1997
- Taiwan Semiconductor Manufacturing Company Ltd.
- Sen Fu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming damage free patterned layers adjoining the edges...
- Patent number 5,633,210
- Issue date May 27, 1997
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Bao R. Yang
- H01 - BASIC ELECTRIC ELEMENTS