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Baonian Guo
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Andover, MA, US
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Patents Grants
last 30 patents
Information
Patent Grant
Ion implantation to reduce nanosheet gate length variation
Patent number
11,955,533
Issue date
Apr 9, 2024
Applied Materials, Inc.
Sipeng Gu
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Ion implantation to reduce nanosheet gate length variation
Patent number
11,430,877
Issue date
Aug 30, 2022
Applied Materials, Inc.
Sipeng Gu
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Uniform gate dielectric for DRAM device
Patent number
10,522,549
Issue date
Dec 31, 2019
Varian Semiconductor Equipment Associates, Inc.
Baonian Guo
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
FinFET device fabrication using thermal implantation
Patent number
8,722,431
Issue date
May 13, 2014
Varian Semiconductor Equipment Associates, Inc.
Nilay Anil Pradhan
H01 - BASIC ELECTRIC ELEMENTS
Patents Applications
last 30 patents
Information
Patent Application
THREE DIMENSIONAL DEVICE FORMATION USING EARLY REMOVAL OF SACRIFICI...
Publication number
20230369453
Publication date
Nov 16, 2023
Applied Materials, Inc.
Yan Zhang
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
ION IMPLANTATION TO REDUCE NANOSHEET GATE LENGTH VARIATION
Publication number
20220359723
Publication date
Nov 10, 2022
Applied Materials, Inc.
Sipeng Gu
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
ION IMPLANTATION TO REDUCE NANOSHEET GATE LENGTH VARIATION
Publication number
20220157968
Publication date
May 19, 2022
Applied Materials, Inc.
Sipeng Gu
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
UNIFORM GATE DIELECTRIC FOR DRAM DEVICE
Publication number
20190259764
Publication date
Aug 22, 2019
Varian Semiconductor Equipment Associates, Inc.
Baonian Guo
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Finfet Device Fabrication Using Thermal Implantation
Publication number
20130252349
Publication date
Sep 26, 2013
Varian Semiconductor Equipment Associates, Inc.
Nilay Anil Pradhan
H01 - BASIC ELECTRIC ELEMENTS