Baoshun Zhang

Person

Suzhou, CN

People

Patents Grantslast 30 patents

Information Patent Grant
Gallium oxide film based on sapphire substrate as well as growth me...
- Patent number 11,996,288
- Issue date May 28, 2024
- SUZHOU INSTITUTE OF NANO-TECH AND NANO-BIONICS (SINANO) , CHINESE ACADEMY OF...
- Xiaodong Zhang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Fabricating method of film bulk acoustic resonator
- Patent number 11,942,916
- Issue date Mar 26, 2024
- SUZHOU INSTITUTE OF NANO-TECH AND NANO-BIONICS (SINANO), CHINESE ACADEMY OF S...
- Xiaodong Zhang
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Group III nitride transistor structure capable of reducing leakage...
- Patent number 11,810,910
- Issue date Nov 7, 2023
- SUZHOU INSTITUTE OF NANO-TECH AND NANO-BIONICS (SINANO) , CHINESE ACADEMY OF...
- Xing Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ballistic transport semiconductor device based on nano array and ma...
- Patent number 11,145,753
- Issue date Oct 12, 2021
- SUZHOU INSTITUTE OF NANO-TECH AND NANO-BIONICS (SINANO), CHINESE ACADEMY OF...
- Guohao Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for suppressing impact of compensator on line...
- Patent number 10,965,114
- Issue date Mar 30, 2021
- NR ELECTRIC CO., LTD
- Lei Pan
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Group III nitride high electron mobility transistor (HEMT) device
- Patent number 9,070,756
- Issue date Jun 30, 2015
- Suzhou Institute of Nano-Tech and Nano-Bionics of Chinese Academy of Sciences
- Yong Cai
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
GROUP III NITRIDE TRANSISTOR STRUCTURE CAPABLE OF REDUCING LEAKAGE...
- Publication number 20230260988
- Publication date Aug 17, 2023
- SUZHOU INSTITUTE OF NANO-TECH AND NANO-BIONICS (SINANO) , CHINESE ACADEMY OF...
- Xing WEI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM OXIDE FILM BASED ON SAPPHIRE SUBSTRATE AS WELL AS GROWTH ME...
- Publication number 20210327703
- Publication date Oct 21, 2021
- SUZHOU INSTITUTE OF NANO-TECH AND NANO-BIONICS (SINANO), CHINESE ACADEMY OF S...
- Xiaodong ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FILM BULK ACOUSTIC RESONATOR AND FABRICATING METHOD THEREOF
- Publication number 20210265967
- Publication date Aug 26, 2021
- Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of S...
- Xiaodong ZHANG
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Compensator, Control Method and Device Therefor
- Publication number 20210226449
- Publication date Jul 22, 2021
- Nr. Electric Co., Ltd
- Yunlong Dong
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Application
RADIO-FREQUENCY/MICROWAVE ENERGY HARVESTING DEVICE BASED ON SPINTRO...
- Publication number 20200251934
- Publication date Aug 6, 2020
- SUZHOU INSTITUTE OF NANO-TECH AND NANO-BIONICS(SINANO) CHINESE ACADEMY OF SCI...
- Zhongming ZENG
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Application
BALLISTIC TRANSPORT SEMICONDUCTOR DEVICE BASED ON NANO ARRAY AND MA...
- Publication number 20200227541
- Publication date Jul 16, 2020
- SUZHOU INSTITUTE OF NANO-TECH AND NANO-BIONICS (SINANO), CHINESE ACADEMY OF S...
- Guohao YU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method And Apparatus For Suppressing Impact Of Compensator On Line...
- Publication number 20200185901
- Publication date Jun 11, 2020
- NR ELECTRIC CO., LTD.
- Lei PAN
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Application
TERAHERTZ SOURCE CHIP, SOURCE DEVICE AND SOURCE ASSEMBLY, AND MANUF...
- Publication number 20160233379
- Publication date Aug 11, 2016
- SUZHOU INSTITUTE OF NANO-TECH AND NANO-BIONICS (SINANO), CHINESE ACADEMY OF S...
- Hua Qin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Group III Nitride High Electron Mobility Transistor (HEMT) Device
- Publication number 20140319584
- Publication date Oct 30, 2014
- Yong Cai
- H01 - BASIC ELECTRIC ELEMENTS

Baoshun Zhang

Person

Patents Grantslast 30 patents

Gallium oxide film based on sapphire substrate as well as growth me...

Fabricating method of film bulk acoustic resonator

Group III nitride transistor structure capable of reducing leakage...

Ballistic transport semiconductor device based on nano array and ma...

Method and apparatus for suppressing impact of compensator on line...

Group III nitride high electron mobility transistor (HEMT) device

Patents Applicationslast 30 patents

GROUP III NITRIDE TRANSISTOR STRUCTURE CAPABLE OF REDUCING LEAKAGE...

GALLIUM OXIDE FILM BASED ON SAPPHIRE SUBSTRATE AS WELL AS GROWTH ME...

FILM BULK ACOUSTIC RESONATOR AND FABRICATING METHOD THEREOF

Compensator, Control Method and Device Therefor

RADIO-FREQUENCY/MICROWAVE ENERGY HARVESTING DEVICE BASED ON SPINTRO...

BALLISTIC TRANSPORT SEMICONDUCTOR DEVICE BASED ON NANO ARRAY AND MA...

Method And Apparatus For Suppressing Impact Of Compensator On Line...

TERAHERTZ SOURCE CHIP, SOURCE DEVICE AND SOURCE ASSEMBLY, AND MANUF...

Group III Nitride High Electron Mobility Transistor (HEMT) Device