Baoyou Chen

Person

Wuhan, CN

People

Patents Grantslast 30 patents

Information Patent Grant
Through array contact structure of three-dimensional memory device
- Patent number 12,185,550
- Issue date Dec 31, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Staircase formation in three-dimensional memory device
- Patent number 11,997,851
- Issue date May 28, 2024
- Yangtze Memory Technologies Co., Ltd.
- Xiang Hui Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Joint opening structures of three-dimensional memory devices and me...
- Patent number 11,956,953
- Issue date Apr 9, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu Lu
Information Patent Grant
Openings layout of three-dimensional memory device
- Patent number 11,903,195
- Issue date Feb 13, 2024
- Yangtze Memory Technologies Co., Ltd.
- Jia He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Through array contact structure of three-dimensional memory device
- Patent number 11,785,776
- Issue date Oct 10, 2023
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Openings layout of three-dimensional memory device
- Patent number 11,574,919
- Issue date Feb 7, 2023
- Yangtze Memory Technologies Co., Ltd.
- Jia He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Through array contact structure of three-dimensional memory device
- Patent number 11,545,505
- Issue date Jan 3, 2023
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Joint opening structures of three-dimensional memory devices and me...
- Patent number 11,482,532
- Issue date Oct 25, 2022
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Through array contact structure of three- dimensional memory device
- Patent number 10,910,397
- Issue date Feb 2, 2021
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Joint opening structures of three-dimensional memory devices and me...
- Patent number 10,886,291
- Issue date Jan 5, 2021
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Joint opening structures of three-dimensional memory devices and me...
- Patent number 10,847,532
- Issue date Nov 24, 2020
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Openings layout of three-dimensional memory device
- Patent number 10,804,283
- Issue date Oct 13, 2020
- Yangtze Memory Technologies Co., Ltd.
- Jia He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Staircase formation in three-dimensional memory device
- Patent number 10,790,295
- Issue date Sep 29, 2020
- Yangtze Memory Technologies Co., Ltd.
- Xiang Hui Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Through array contact structure of three-dimensional memory device
- Patent number 10,553,604
- Issue date Feb 4, 2020
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
THROUGH ARRAY CONTACT STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE
- Publication number 20240407172
- Publication date Dec 5, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES
- Publication number 20240188291
- Publication date Jun 6, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu LU
Information Patent Application
OPENINGS LAYOUT OF THREE-DIMENSIONAL MEMORY DEVICE
- Publication number 20240107757
- Publication date Mar 28, 2024
- Yangtze Memory Technologies Co., Ltd.
- Jia He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THROUGH ARRAY CONTACT STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE
- Publication number 20230389323
- Publication date Nov 30, 2023
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Openings Layout of Three-Dimensional Memory Device
- Publication number 20230157020
- Publication date May 18, 2023
- Yangtze Memory Technologies Co., Ltd.
- Jia He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
JOINT OPENING STRUCTURES OF THREE-DIMENSIONAL MEMORY DEVICES AND ME...
- Publication number 20230016627
- Publication date Jan 19, 2023
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THROUGH ARRAY CONTACT STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE
- Publication number 20230005950
- Publication date Jan 5, 2023
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Openings Layout of Three-Dimensional Memory Device
- Publication number 20210151458
- Publication date May 20, 2021
- Yangtze Memory Technologies Co., Ltd.
- Jia He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THROUGH ARRAY CONTACT STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE
- Publication number 20210126005
- Publication date Apr 29, 2021
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
JOINT OPENING STRUCTURES OF THREE-DIMENSIONAL MEMORY DEVICES AND ME...
- Publication number 20210074718
- Publication date Mar 11, 2021
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STAIRCASE FORMATION IN THREE-DIMENSIONAL MEMORY DEVICE
- Publication number 20200411538
- Publication date Dec 31, 2020
- Yangtze Memory Technologies Co., Ltd.
- Xiang Hui ZHAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THROUGH ARRAY CONTACT STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE
- Publication number 20200152653
- Publication date May 14, 2020
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STAIRCASE FORMATION IN THREE-DIMENSIONAL MEMORY DEVICE
- Publication number 20190355738
- Publication date Nov 21, 2019
- Yangtze Memory Technologies Co., Ltd.
- Xiang Hui ZHAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
JOINT OPENNING STRUCTURES OF THREE-DIMENSIONAL MEMORY DEVICES AND M...
- Publication number 20190081060
- Publication date Mar 14, 2019
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THROUGH ARRAY CONTACT STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE
- Publication number 20190043879
- Publication date Feb 7, 2019
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Openings Layout of Three-Dimensional Memory Device
- Publication number 20190013327
- Publication date Jan 10, 2019
- Yangtze Memory Technologies Co., Ltd.
- Jia He
- H01 - BASIC ELECTRIC ELEMENTS

Baoyou Chen

Person

Patents Grantslast 30 patents

Through array contact structure of three-dimensional memory device

Staircase formation in three-dimensional memory device

Joint opening structures of three-dimensional memory devices and me...

Openings layout of three-dimensional memory device

Through array contact structure of three-dimensional memory device

Openings layout of three-dimensional memory device

Through array contact structure of three-dimensional memory device

Joint opening structures of three-dimensional memory devices and me...

Through array contact structure of three- dimensional memory device

Joint opening structures of three-dimensional memory devices and me...

Joint opening structures of three-dimensional memory devices and me...

Openings layout of three-dimensional memory device

Staircase formation in three-dimensional memory device

Through array contact structure of three-dimensional memory device

Patents Applicationslast 30 patents

THROUGH ARRAY CONTACT STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE

SEMICONDUCTOR DEVICES

OPENINGS LAYOUT OF THREE-DIMENSIONAL MEMORY DEVICE

THROUGH ARRAY CONTACT STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE

Openings Layout of Three-Dimensional Memory Device

JOINT OPENING STRUCTURES OF THREE-DIMENSIONAL MEMORY DEVICES AND ME...

THROUGH ARRAY CONTACT STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE

Openings Layout of Three-Dimensional Memory Device

THROUGH ARRAY CONTACT STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE

JOINT OPENING STRUCTURES OF THREE-DIMENSIONAL MEMORY DEVICES AND ME...

STAIRCASE FORMATION IN THREE-DIMENSIONAL MEMORY DEVICE

THROUGH ARRAY CONTACT STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE

STAIRCASE FORMATION IN THREE-DIMENSIONAL MEMORY DEVICE

JOINT OPENNING STRUCTURES OF THREE-DIMENSIONAL MEMORY DEVICES AND M...

THROUGH ARRAY CONTACT STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE

Openings Layout of Three-Dimensional Memory Device