Basanth Jagannathan

Person

Stormville, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Region-based power grid generation through modification of an initi...
- Patent number 11,916,384
- Issue date Feb 27, 2024
- International Business Machines Corporation
- David Wolpert
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Structure and layout of a FET prime cell
- Patent number 8,829,572
- Issue date Sep 9, 2014
- International Business Machines Corporation
- Basanth Jagannathan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and layout of a FET prime cell
- Patent number 8,187,930
- Issue date May 29, 2012
- International Business Machines Corporation
- Basanth Jagannathan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System and method for de-embedding a device under test employing a...
- Patent number 7,741,857
- Issue date Jun 22, 2010
- International Business Machines Corporation
- Basanth Jagannathan
- G01 - MEASURING TESTING
Information Patent Grant
Incorporation of carbon in silicon/silicon germanium epitaxial laye...
- Patent number 7,713,829
- Issue date May 11, 2010
- International Business Machines Corporation
- Jack Oon Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor having an asymmetrically stressed channel r...
- Patent number 7,355,221
- Issue date Apr 8, 2008
- International Business Machines Corporation
- Gregory G. Freeman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial and polycrystalline growth of Si1-x-yGexCy and Si1-yCy al...
- Patent number 7,183,576
- Issue date Feb 27, 2007
- International Business Machines Corporation
- Jack Oon Chu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Incorporation of carbon in silicon/silicon germanium epitaxial laye...
- Patent number 7,173,274
- Issue date Feb 6, 2007
- International Business Machines Corporation
- Jack Oon Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar device having shallow junction raised extrinsic base and me...
- Patent number 6,927,476
- Issue date Aug 9, 2005
- Internal Business Machines Corporation
- Gregory G. Freeman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial and polycrystalline growth of Si1-x-yGexCy and Si1-yCy al...
- Patent number 6,908,866
- Issue date Jun 21, 2005
- International Business Machines Corporation
- Jack Oon Chu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
In-situ monitoring and control of germanium profile in silicon-germ...
- Patent number 6,881,259
- Issue date Apr 19, 2005
- International Business Machines Corporation
- David C. Ahlgren
- C30 - CRYSTAL GROWTH
Information Patent Grant
Single reactor, multi-pressure chemical vapor deposition for semico...
- Patent number 6,875,279
- Issue date Apr 5, 2005
- International Business Machines Corporation
- Jack O. Chu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Low defect pre-emitter and pre-base oxide etch for bipolar transist...
- Patent number 6,858,532
- Issue date Feb 22, 2005
- International Business Machines Corporation
- Wesley C. Natzle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Incorporation of carbon in silicon/silicon germanium epitaxial laye...
- Patent number 6,815,802
- Issue date Nov 9, 2004
- International Business Machines Corporation
- Jack Oon Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to fabricate SiGe HBTs with controlled current gain and impr...
- Patent number 6,787,427
- Issue date Sep 7, 2004
- International Business Machines Corporation
- David R. Greenberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
BiCMOS integration scheme with raised extrinsic base
- Patent number 6,780,695
- Issue date Aug 24, 2004
- International Business Machines Corporation
- Huajie Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to increase carbon and boron doping concentrations in Si and...
- Patent number 6,780,735
- Issue date Aug 24, 2004
- International Business Machines Corporation
- Basanth Jagannathan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial and polycrystalline growth of Si1-x-yGexCy and Si1-yCy al...
- Patent number 6,750,119
- Issue date Jun 15, 2004
- International Business Machines Corporation
- Jack Oon Chu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Optimized blocking impurity placement for SiGe HBTs
- Patent number 6,744,079
- Issue date Jun 1, 2004
- International Business Machines Corporation
- Basanth Jagannathan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating heterojunction bipolar transistors
- Patent number 6,660,607
- Issue date Dec 9, 2003
- International Business Machines Corporation
- Basanth Jagannathan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to fabricate SiGe HBTs with controlled current gain and impr...
- Patent number 6,656,809
- Issue date Dec 2, 2003
- International Business Machines Corporation
- David R. Greenberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stepped collector implant and method for fabrication
- Patent number 6,506,656
- Issue date Jan 14, 2003
- International Business Machines Corporation
- Gregory G. Freeman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Incorporation of carbon in silicon/silicon germanium epitaxial laye...
- Patent number 6,426,265
- Issue date Jul 30, 2002
- International Business Machines Corporation
- Jack Oon Chu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
REGION-BASED POWER GRID GENERATION THROUGH MODIFICATION OF AN INITI...
- Publication number 20230090855
- Publication date Mar 23, 2023
- International Business Machines Corporation
- David Wolpert
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Application
STRUCTURE AND LAYOUT OF A FET PRIME CELL
- Publication number 20120146104
- Publication date Jun 14, 2012
- International Business Machines Corporation
- Basanth Jagannathan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYSTEM AND METHOD FOR DE-EMBEDDING A DEVICE UNDER TEST EMPLOYING A...
- Publication number 20090224772
- Publication date Sep 10, 2009
- International Business Machines Corporation
- Basanth Jagannathan
- G01 - MEASURING TESTING
Information Patent Application
INCORPORATION OF CARBON IN SILICON/SILICON GERMANIUM EPITAXIAL LAYE...
- Publication number 20080124881
- Publication date May 29, 2008
- International Business Machines Corporation
- Jack Ooh Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND LAYOUT OF A FET PRIME CELL
- Publication number 20080076212
- Publication date Mar 27, 2008
- International Business Machines Corporation
- Basanth Jagannathan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD OF MAKING A FIELD EFFECT TRANSISTOR HAVING AN...
- Publication number 20060255415
- Publication date Nov 16, 2006
- International Business Machines Corporation
- Gregory G. Freeman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND LAYOUT OF A FET PRIME CELL
- Publication number 20060071304
- Publication date Apr 6, 2006
- International Business Machines Corporation
- Basanth Jagannathan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Single reactor, multi-pressure chemical vapor deposition for semico...
- Publication number 20050145172
- Publication date Jul 7, 2005
- IBM Corporation (Burlington)
- Jack O. Chu
- C30 - CRYSTAL GROWTH
Information Patent Application
Incorporation of carbon in silicon/silicon germanium epitaxial laye...
- Publication number 20050054171
- Publication date Mar 10, 2005
- International Business Machines Corporation
- Jack Oon Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Epitaxial and polycrystalline growth of Si1-x-yGexCy and Si1-yCy al...
- Publication number 20040161911
- Publication date Aug 19, 2004
- International Business Machines Corporation
- Jack Oon Chu
- C30 - CRYSTAL GROWTH
Information Patent Application
Epitaxial and polycrystalline growth of Si1-x-yGexCy and Si1-yCy al...
- Publication number 20040161875
- Publication date Aug 19, 2004
- International Business Machines Corporation
- Jack Oon Chu
- C30 - CRYSTAL GROWTH
Information Patent Application
Optimized blocking impurity placement for SiGe HBTs
- Publication number 20040140481
- Publication date Jul 22, 2004
- Basanth Jagannathan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low defect pre-emitter and pre-base oxide etch for bipolar transist...
- Publication number 20040110354
- Publication date Jun 10, 2004
- International Business Machines Corporation
- Wesley C. Natzle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method to fabricate SiGe HBTs with controlled current gain and impr...
- Publication number 20040063293
- Publication date Apr 1, 2004
- International Business Machines Corporation
- David R. Greenberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Optimized blocking impurity placement for SiGe HBTs
- Publication number 20030170960
- Publication date Sep 11, 2003
- International Business Machines Corporation
- Basanth Jagannathan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method to fabricate SiGe HBTs with controlled current gain and impr...
- Publication number 20030132453
- Publication date Jul 17, 2003
- International Business Machines Corporation
- David R. Greenberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Single reactor, multi-pressure chemical vapor deposition for semico...
- Publication number 20030094130
- Publication date May 22, 2003
- International Business Machines Corporation
- Jack O. Chu
- C30 - CRYSTAL GROWTH
Information Patent Application
Bipolar device having shallow junction raised extrinsic base and me...
- Publication number 20030057458
- Publication date Mar 27, 2003
- International Business Machines Corporation
- Gregory G. Freeman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Non-self-aligned SiGe heterojunction bipolar transistor
- Publication number 20020197807
- Publication date Dec 26, 2002
- International Business Machines Corporation
- Basanth Jagannathan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Epitaxial and polycrystalline growth of Si1-x-yGexCy and Si1-yCy al...
- Publication number 20020182423
- Publication date Dec 5, 2002
- International Business Machines Corporation
- Jack Oon Chu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Method to increase carbon and boron doping concentrations in Si and...
- Publication number 20020160587
- Publication date Oct 31, 2002
- Basanth Jagannathan
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for fabricating heterojunction bipolar transistors
- Publication number 20020139996
- Publication date Oct 3, 2002
- International Business Machines Corporation
- Basanth Jagannathan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Stepped collector implant and method for fabrication
- Publication number 20020132434
- Publication date Sep 19, 2002
- International Business Machines Corporation
- Gregory G. Freeman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Incorporation of carbon in silicon/silicon germanium epitaxial laye...
- Publication number 20020121676
- Publication date Sep 5, 2002
- International Business Machines Corporation
- Jack Oon Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INCORPORATION OF CARBON IN SILICON/SILICON GERMANIUM EPITAXIAL LAYE...
- Publication number 20020100917
- Publication date Aug 1, 2002
- International Business Machines Corporation
- Jack Oon Chu
- H01 - BASIC ELECTRIC ELEMENTS

Basanth Jagannathan

Person

Patents Grantslast 30 patents

Region-based power grid generation through modification of an initi...

Structure and layout of a FET prime cell

Structure and layout of a FET prime cell

System and method for de-embedding a device under test employing a...

Incorporation of carbon in silicon/silicon germanium epitaxial laye...

Field effect transistor having an asymmetrically stressed channel r...

Epitaxial and polycrystalline growth of Si1-x-yGexCy and Si1-yCy al...

Incorporation of carbon in silicon/silicon germanium epitaxial laye...

Bipolar device having shallow junction raised extrinsic base and me...

Epitaxial and polycrystalline growth of Si1-x-yGexCy and Si1-yCy al...

In-situ monitoring and control of germanium profile in silicon-germ...

Single reactor, multi-pressure chemical vapor deposition for semico...

Low defect pre-emitter and pre-base oxide etch for bipolar transist...

Incorporation of carbon in silicon/silicon germanium epitaxial laye...

Method to fabricate SiGe HBTs with controlled current gain and impr...

BiCMOS integration scheme with raised extrinsic base

Method to increase carbon and boron doping concentrations in Si and...

Epitaxial and polycrystalline growth of Si1-x-yGexCy and Si1-yCy al...

Optimized blocking impurity placement for SiGe HBTs

Method for fabricating heterojunction bipolar transistors

Method to fabricate SiGe HBTs with controlled current gain and impr...

Stepped collector implant and method for fabrication

Incorporation of carbon in silicon/silicon germanium epitaxial laye...

Patents Applicationslast 30 patents

REGION-BASED POWER GRID GENERATION THROUGH MODIFICATION OF AN INITI...

STRUCTURE AND LAYOUT OF A FET PRIME CELL

SYSTEM AND METHOD FOR DE-EMBEDDING A DEVICE UNDER TEST EMPLOYING A...

INCORPORATION OF CARBON IN SILICON/SILICON GERMANIUM EPITAXIAL LAYE...

STRUCTURE AND LAYOUT OF A FET PRIME CELL

STRUCTURE AND METHOD OF MAKING A FIELD EFFECT TRANSISTOR HAVING AN...

STRUCTURE AND LAYOUT OF A FET PRIME CELL

Single reactor, multi-pressure chemical vapor deposition for semico...

Incorporation of carbon in silicon/silicon germanium epitaxial laye...

Epitaxial and polycrystalline growth of Si1-x-yGexCy and Si1-yCy al...

Epitaxial and polycrystalline growth of Si1-x-yGexCy and Si1-yCy al...

Optimized blocking impurity placement for SiGe HBTs

Low defect pre-emitter and pre-base oxide etch for bipolar transist...

Method to fabricate SiGe HBTs with controlled current gain and impr...

Optimized blocking impurity placement for SiGe HBTs

Method to fabricate SiGe HBTs with controlled current gain and impr...

Single reactor, multi-pressure chemical vapor deposition for semico...

Bipolar device having shallow junction raised extrinsic base and me...

Non-self-aligned SiGe heterojunction bipolar transistor

Epitaxial and polycrystalline growth of Si1-x-yGexCy and Si1-yCy al...

Method to increase carbon and boron doping concentrations in Si and...

Method for fabricating heterojunction bipolar transistors

Stepped collector implant and method for fabrication

Incorporation of carbon in silicon/silicon germanium epitaxial laye...

INCORPORATION OF CARBON IN SILICON/SILICON GERMANIUM EPITAXIAL LAYE...