Bassem F. Radieddine

Person

Aliso Viejo, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method using a one-time programmable memory cell
- Patent number 8,094,499
- Issue date Jan 10, 2012
- Broadcom Corporation
- Douglas D. Smith
- G11 - INFORMATION STORAGE
Information Patent Grant
Method using a one-time programmable memory cell
- Patent number 7,376,022
- Issue date May 20, 2008
- Broadcom Corporation
- Douglas D. Smith
- G11 - INFORMATION STORAGE
Information Patent Grant
System and method using a one-time programmable memory cell
- Patent number 7,136,303
- Issue date Nov 14, 2006
- Broadcom Corporation
- Douglas D. Smith
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cell with fuse element
- Patent number 6,903,993
- Issue date Jun 7, 2005
- Broadcom Corporation
- Douglas D. Smith
- G11 - INFORMATION STORAGE
Information Patent Grant
High voltage switch circuitry
- Patent number 6,901,004
- Issue date May 31, 2005
- Broadcom Corporation
- Douglas D. Smith
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cell with fuse element
- Patent number 6,898,103
- Issue date May 24, 2005
- Broadcom Corporation
- Douglas D. Smith
- G11 - INFORMATION STORAGE
Information Patent Grant
High voltage switch circuitry
- Patent number 6,744,660
- Issue date Jun 1, 2004
- Broadcom Corporation
- Douglas D. Smith
- G11 - INFORMATION STORAGE
Information Patent Grant
High voltage switch circuitry
- Patent number 6,693,819
- Issue date Feb 17, 2004
- Broadcom Corporation
- Douglas D. Smith
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cell with fuse element
- Patent number 6,525,955
- Issue date Feb 25, 2003
- Broadcom Corporation
- Douglas D. Smith
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
Method Using a One-Time Programmable Memory Cell
- Publication number 20080247242
- Publication date Oct 9, 2008
- BROADCOM CORPORATION
- Douglas D. Smith
- G11 - INFORMATION STORAGE
Information Patent Application
High density one time programmable memory
- Publication number 20080186753
- Publication date Aug 7, 2008
- BROADCOM CORPORATION
- Myron Buer
- G11 - INFORMATION STORAGE
Information Patent Application
Method using a one-time programmable memory cell
- Publication number 20070041246
- Publication date Feb 22, 2007
- BROADCOM CORPORATION
- Douglas D. Smith
- G11 - INFORMATION STORAGE
Information Patent Application
System and method using a one-time programmable memory cell
- Publication number 20060044861
- Publication date Mar 2, 2006
- Broadcom Corporation
- Douglas D. Smith
- G11 - INFORMATION STORAGE
Information Patent Application
High voltage switch circuitry
- Publication number 20040257859
- Publication date Dec 23, 2004
- Douglas D. Smith
- G11 - INFORMATION STORAGE
Information Patent Application
Memory cell with fuse element
- Publication number 20040151049
- Publication date Aug 5, 2004
- Douglas D. Smith
- G11 - INFORMATION STORAGE
Information Patent Application
High voltage switch circuitry
- Publication number 20030202398
- Publication date Oct 30, 2003
- Douglas D. Smith
- G11 - INFORMATION STORAGE
Information Patent Application
Memory cell with fuse element
- Publication number 20030142530
- Publication date Jul 31, 2003
- Douglas D. Smith
- G11 - INFORMATION STORAGE
Information Patent Application
HIGH VOLTAGE SWITCH CIRCUITRY
- Publication number 20030128576
- Publication date Jul 10, 2003
- Douglas D. Smith
- G11 - INFORMATION STORAGE

Bassem F. Radieddine

Person

Patents Grantslast 30 patents

Method using a one-time programmable memory cell

Method using a one-time programmable memory cell

System and method using a one-time programmable memory cell

Memory cell with fuse element

High voltage switch circuitry

Memory cell with fuse element

High voltage switch circuitry

High voltage switch circuitry

Memory cell with fuse element

Patents Applicationslast 30 patents

Method Using a One-Time Programmable Memory Cell

High density one time programmable memory

Method using a one-time programmable memory cell

System and method using a one-time programmable memory cell

High voltage switch circuitry

Memory cell with fuse element

High voltage switch circuitry

Memory cell with fuse element

HIGH VOLTAGE SWITCH CIRCUITRY