Bayard K. Johnson

Person

Jefferson Hills, PA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Growth of a uniformly doped silicon ingot by doping only the initia...
- Patent number 10,544,517
- Issue date Jan 28, 2020
- GTAT IP HOLDING LLC
- Bayard K. Johnson
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon ingot having uniform multiple dopants and method and appara...
- Patent number 10,202,705
- Issue date Feb 12, 2019
- GTAT IP HOLDING LLC
- Bayard K. Johnson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon single crystal doped with gallium, indium, or aluminum
- Patent number 9,051,659
- Issue date Jun 9, 2015
- GTAT IP HOLDING
- John P. DeLuca
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process for forming low defect density, ideal oxygen precipitating...
- Patent number 7,442,253
- Issue date Oct 28, 2008
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low defect density, ideal oxygen precipitating silicon
- Patent number 7,229,693
- Issue date Jun 12, 2007
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for producing low defect density, ideal oxygen precipitatin...
- Patent number 6,896,728
- Issue date May 24, 2005
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vacancy, dominsated, defect-free silicon
- Patent number 6,840,997
- Issue date Jan 11, 2005
- MEMC Electronic Materials, Inc.
- Robert A. Falster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low defect density epitaxial wafer and a process for the preparatio...
- Patent number 6,632,278
- Issue date Oct 14, 2003
- MEMC Electronic Materials, Inc.
- Robert A. Falster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for producing low defect density, ideal oxygen precipitatin...
- Patent number 6,555,194
- Issue date Apr 29, 2003
- MEMC Electronic Materials, Inc.
- Robert A. Falster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low defect density, self-interstitial dominated silicon
- Patent number 6,409,826
- Issue date Jun 25, 2002
- MEMC Electronic Materials, Inc.
- Robert A. Falster
- C30 - CRYSTAL GROWTH
Information Patent Grant
Vacancy dominated, defect-free silicon
- Patent number 6,379,642
- Issue date Apr 30, 2002
- MEMC Electronic Materials, Inc.
- Robert A. Falster
- C30 - CRYSTAL GROWTH
Information Patent Grant
Continuous oxidation process for crystal pulling apparatus
- Patent number 6,315,828
- Issue date Nov 13, 2001
- MEMC Electronic Materials, Inc.
- John D. Holder
- C30 - CRYSTAL GROWTH
Information Patent Grant
Low defect density self-interstitial dominated silicon
- Patent number 6,254,672
- Issue date Jul 3, 2001
- MEMC Electronic Materials, Inc.
- Robert A. Falster
- C30 - CRYSTAL GROWTH
Information Patent Grant
Low defect density, ideal oxygen precipitating silicon
- Patent number 6,190,631
- Issue date Feb 20, 2001
- MEMC Electronic Materials, Inc.
- Robert A. Falster
- C30 - CRYSTAL GROWTH
Information Patent Grant
Continuous oxidation process for crystal pulling apparatus
- Patent number 6,039,801
- Issue date Mar 21, 2000
- MEMC Electronic Materials, Inc.
- John D. Holder
- C30 - CRYSTAL GROWTH
Information Patent Grant
Low defect density vacancy dominated silicon
- Patent number 5,919,302
- Issue date Jul 6, 1999
- MEMC Electronic Materials, Inc.
- Robert A. Falster
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
Methods for Removing a Melt of Silicon from a Crucible and Related...
- Publication number 20190203378
- Publication date Jul 4, 2019
- Corner Star Limited
- Bayard K. Johnson
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON INGOT HAVING UNIFORM MULTIPLE DOPANTS AND METHOD AND APPARA...
- Publication number 20120301386
- Publication date Nov 29, 2012
- GT Advanced CZ, LLC
- Bayard K. Johnson
- C30 - CRYSTAL GROWTH
Information Patent Application
GROWTH OF A UNIFORMLY DOPED SILICON INGOT BY DOPING ONLY THE INITIA...
- Publication number 20120279437
- Publication date Nov 8, 2012
- GT Advanced CZ, LLC
- Bayard K. Johnson
- C30 - CRYSTAL GROWTH
Information Patent Application
Silicon Single Crystal Doped with Gallium, Indium, or Aluminum
- Publication number 20120056135
- Publication date Mar 8, 2012
- John P. DeLuca
- C30 - CRYSTAL GROWTH
Information Patent Application
PROCESS FOR FORMING LOW DEFECT DENSITY, IDEAL OXYGEN PRECIPITATING...
- Publication number 20070224783
- Publication date Sep 27, 2007
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- C30 - CRYSTAL GROWTH
Information Patent Application
Vacancy-dominated, defect-free silicon
- Publication number 20050238905
- Publication date Oct 27, 2005
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- C30 - CRYSTAL GROWTH
Information Patent Application
Low defect density, ideal oxygen precipitating silicon
- Publication number 20050170610
- Publication date Aug 4, 2005
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- C30 - CRYSTAL GROWTH
Information Patent Application
Process for producing low defect density silicon
- Publication number 20040089224
- Publication date May 13, 2004
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- C30 - CRYSTAL GROWTH
Information Patent Application
Process for producing low defect density, ideal oxygen precipitatin...
- Publication number 20040025782
- Publication date Feb 12, 2004
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- C30 - CRYSTAL GROWTH
Information Patent Application
Process for suppressing the nucleation and/or growth of interstitia...
- Publication number 20030196587
- Publication date Oct 23, 2003
- MEMC Electronic Materials, Inc.
- Kirk D. McCallum
- C30 - CRYSTAL GROWTH
Information Patent Application
Vacancy, dominated, defect-free silicon
- Publication number 20030051657
- Publication date Mar 20, 2003
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- C30 - CRYSTAL GROWTH
Information Patent Application
LOW DEFECT DENSITY EPITAXIAL WAFER AND A PROCESS FOR THE PREPARATIO...
- Publication number 20020170485
- Publication date Nov 21, 2002
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- C30 - CRYSTAL GROWTH
Information Patent Application
Vacancy, dominsated, defect-free silicon
- Publication number 20020078880
- Publication date Jun 27, 2002
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- C30 - CRYSTAL GROWTH
Information Patent Application
Low defect density, self-interstitial dominated silicon
- Publication number 20010025597
- Publication date Oct 4, 2001
- Robert J. Falster
- C30 - CRYSTAL GROWTH

Bayard K. Johnson

Person

Patents Grantslast 30 patents

Growth of a uniformly doped silicon ingot by doping only the initia...

Silicon ingot having uniform multiple dopants and method and appara...

Silicon single crystal doped with gallium, indium, or aluminum

Process for forming low defect density, ideal oxygen precipitating...

Low defect density, ideal oxygen precipitating silicon

Process for producing low defect density, ideal oxygen precipitatin...

Vacancy, dominsated, defect-free silicon

Low defect density epitaxial wafer and a process for the preparatio...

Process for producing low defect density, ideal oxygen precipitatin...

Low defect density, self-interstitial dominated silicon

Vacancy dominated, defect-free silicon

Continuous oxidation process for crystal pulling apparatus

Low defect density self-interstitial dominated silicon

Low defect density, ideal oxygen precipitating silicon

Continuous oxidation process for crystal pulling apparatus

Low defect density vacancy dominated silicon

Patents Applicationslast 30 patents

Methods for Removing a Melt of Silicon from a Crucible and Related...

SILICON INGOT HAVING UNIFORM MULTIPLE DOPANTS AND METHOD AND APPARA...

GROWTH OF A UNIFORMLY DOPED SILICON INGOT BY DOPING ONLY THE INITIA...

Silicon Single Crystal Doped with Gallium, Indium, or Aluminum

PROCESS FOR FORMING LOW DEFECT DENSITY, IDEAL OXYGEN PRECIPITATING...

Vacancy-dominated, defect-free silicon

Low defect density, ideal oxygen precipitating silicon

Process for producing low defect density silicon

Process for producing low defect density, ideal oxygen precipitatin...

Process for suppressing the nucleation and/or growth of interstitia...

Vacancy, dominated, defect-free silicon

LOW DEFECT DENSITY EPITAXIAL WAFER AND A PROCESS FOR THE PREPARATIO...

Vacancy, dominsated, defect-free silicon

Low defect density, self-interstitial dominated silicon