Beak Hyung Cho

Person

Yongin-si, KR

People

Patents Grantslast 30 patents

Information Patent Grant
Nonvolatile memory device with reduced coupling noise and driving m...
- Patent number 9,570,168
- Issue date Feb 14, 2017
- Samsung Electronics Co., Ltd.
- Jae-Yun Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile memory device using variable resistive element
- Patent number 9,336,877
- Issue date May 10, 2016
- Samsung Electronics Co., Ltd.
- Jae-Yun Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device having dummy bit line
- Patent number 9,147,440
- Issue date Sep 29, 2015
- Samsung Electronics Co., Ltd.
- Jin-Young Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Voltage control method to minimize a coupling noise between adjacen...
- Patent number 8,837,234
- Issue date Sep 16, 2014
- Samsung Electronics Co., Ltd.
- Yu Hwan Ro
- G11 - INFORMATION STORAGE
Information Patent Grant
Phase change memory device generating program current and method th...
- Patent number 8,259,511
- Issue date Sep 4, 2012
- Samsung Electronic Co., Ltd.
- Beak-Hyung Cho
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cell array biasing method and a semiconductor memory device
- Patent number 8,248,842
- Issue date Aug 21, 2012
- Samsung Electronics Co., Ltd.
- Beak-Hyung Cho
- G11 - INFORMATION STORAGE
Information Patent Grant
Phase-change random access memory capable of reducing word line res...
- Patent number 8,243,495
- Issue date Aug 14, 2012
- Samsung Electronics Co., Ltd.
- Byung-gil Choi
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device having memory array, method of writing, and sy...
- Patent number 8,223,527
- Issue date Jul 17, 2012
- Samsung Electronics Co., Ltd.
- Kwang Jin Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Apparatus and systems using phase change memories
- Patent number 8,194,442
- Issue date Jun 5, 2012
- Samsung Electronics Co., Ltd.
- Beak-Hyung Cho
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device with stacked memory cell and method of...
- Patent number 8,179,711
- Issue date May 15, 2012
- Samsung Electronics Co., Ltd.
- Sung-min Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Variable resistance memory device and system thereof
- Patent number 8,139,432
- Issue date Mar 20, 2012
- Samsung Electronics Co., Ltd.
- Byung-gil Choi
- G11 - INFORMATION STORAGE
Information Patent Grant
Phase change memory devices and systems, and related programming me...
- Patent number 8,134,866
- Issue date Mar 13, 2012
- Samsung Electronics Co., Ltd.
- Jun-Soo Bae
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile memory device, storage system having the same, and meth...
- Patent number 8,050,084
- Issue date Nov 1, 2011
- Samsung Electronics Co., Ltd.
- Jun-Soo Bae
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile memory devices having bit line discharge control circui...
- Patent number 8,040,719
- Issue date Oct 18, 2011
- Samsung Electronics Co., Ltd.
- Beak-hyung Cho
- G11 - INFORMATION STORAGE
Information Patent Grant
Phase change memory
- Patent number 8,023,319
- Issue date Sep 20, 2011
- Samsung Electronics Co., Ltd.
- Beak-Hyung Cho
- G11 - INFORMATION STORAGE
Information Patent Grant
Phase change memory devices employing cell diodes and methods of fa...
- Patent number 7,994,493
- Issue date Aug 9, 2011
- Samsung Electronics Co., Ltd.
- Woo-Yeong Cho
- G11 - INFORMATION STORAGE
Information Patent Grant
Phase change random access memory device
- Patent number 7,986,551
- Issue date Jul 26, 2011
- Samsung Electronics Co., Ltd.
- Mu-hui Park
- G11 - INFORMATION STORAGE
Information Patent Grant
Apparatus and systems using phase change memories
- Patent number 7,944,741
- Issue date May 17, 2011
- Samsung Electronics Co., Ltd.
- Beak-Hyung Cho
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory devices having core structures for multi-writing
- Patent number 7,936,594
- Issue date May 3, 2011
- Samsung Electronics Co., Ltd.
- Joon Min Park
- G11 - INFORMATION STORAGE
Information Patent Grant
Phase change memory device generating program current and method th...
- Patent number 7,936,612
- Issue date May 3, 2011
- Samsung Electronics Co., Ltd.
- Beak-Hyung Cho
- G11 - INFORMATION STORAGE
Information Patent Grant
Phase-change random access memories capable of suppressing coupling...
- Patent number 7,929,337
- Issue date Apr 19, 2011
- Samsung Electronics Co., Ltd.
- Byung-Gil Choi
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for reducing a reset current for resetting a portion of a ph...
- Patent number 7,889,548
- Issue date Feb 15, 2011
- Samsung Electronics Co., Ltd.
- Chang-Wook Jeong
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of testing PRAM device
- Patent number 7,869,271
- Issue date Jan 11, 2011
- Samsung Electronics Co., Ltd.
- Chang-Soo Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Write driver circuit for phase-change memory, memory including the...
- Patent number 7,864,619
- Issue date Jan 4, 2011
- Samsung Electronics Co., Ltd.
- Beak-hyung Cho
- G11 - INFORMATION STORAGE
Information Patent Grant
Phase random access memory with high density
- Patent number 7,838,862
- Issue date Nov 23, 2010
- Samsung Electronics Co., Ltd.
- Hyung-Rok Oh
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile memory device using variable resistive elements
- Patent number 7,821,865
- Issue date Oct 26, 2010
- Samsung Electronics Co., Ltd.
- Byung-gil Choi
- G11 - INFORMATION STORAGE
Information Patent Grant
Power supplying circuit and phase-change random access memory inclu...
- Patent number 7,817,489
- Issue date Oct 19, 2010
- Samsung Electronics Co., Ltd.
- Beak-hyung Cho
- G11 - INFORMATION STORAGE
Information Patent Grant
Phase change random access memory
- Patent number 7,817,465
- Issue date Oct 19, 2010
- Samsung Electronics Co., Ltd.
- Hyung-rok Oh
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile memory device using resistive elements and an associate...
- Patent number 7,808,817
- Issue date Oct 5, 2010
- Samsung Electronics Co., Ltd.
- Beak-Hyung Cho
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of testing PRAM device
- Patent number 7,751,232
- Issue date Jul 6, 2010
- Samsung Electronics Co., Ltd.
- Chang-Soo Lee
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
Nonvolatile Memory Device with Reduced Coupling Noise and Driving M...
- Publication number 20160055905
- Publication date Feb 25, 2016
- Samsung Electronics Co., Ltd.
- Jae-Yun Lee
- G11 - INFORMATION STORAGE
Information Patent Application
NONVOLATILE MEMORY DEVICE USING VARIABLE RESISTIVE ELEMENT
- Publication number 20150179257
- Publication date Jun 25, 2015
- Samsung Electronics Co., Ltd.
- JAE-YUN LEE
- G11 - INFORMATION STORAGE
Information Patent Application
Semiconductor Memory Device Having Dummy Bit Line
- Publication number 20140022831
- Publication date Jan 23, 2014
- SAMSUNG ELECTRONICS CO., LTD.
- Jin-Young Kim
- G11 - INFORMATION STORAGE
Information Patent Application
VOLTAGE CONTROL METHOD AND MEMORY DEVICE USING THE SAME
- Publication number 20120039141
- Publication date Feb 16, 2012
- Samsung Electronics Co., Ltd.
- Yu Hwan RO
- G11 - INFORMATION STORAGE
Information Patent Application
Apparatus and Systems Using Phase Change Memories
- Publication number 20110242886
- Publication date Oct 6, 2011
- Beak-Hyung Cho
- G11 - INFORMATION STORAGE
Information Patent Application
Phase change memory device generating program current and mehtod th...
- Publication number 20110188303
- Publication date Aug 4, 2011
- Beak-Hyung Cho
- G11 - INFORMATION STORAGE
Information Patent Application
NONVOLATILE MEMORY DEVICE, STORAGE SYSTEM HAVING THE SAME, AND METH...
- Publication number 20110080775
- Publication date Apr 7, 2011
- Jun-Soo Bae
- G11 - INFORMATION STORAGE
Information Patent Application
VARIABLE RESISTANCE MEMORY DEVICE AND SYSTEM THEREOF
- Publication number 20110026303
- Publication date Feb 3, 2011
- Byung-Gil Choi
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY CELL ARRAY BIASING METHOD AND A SEMICONDUCTOR MEMORY DEVICE
- Publication number 20100246248
- Publication date Sep 30, 2010
- Samsung Electronics Co., Ltd.
- BEAK-HYUNG CHO
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD OF TESTING PRAM DEVICE
- Publication number 20100232218
- Publication date Sep 16, 2010
- Samsung Electronics Co., Ltd.
- Chang-Soo LEE
- G11 - INFORMATION STORAGE
Information Patent Application
Semiconductor device having resistance based memory array, method o...
- Publication number 20100131708
- Publication date May 27, 2010
- SAMSUNG ELECTRONICS CO., LTD.
- Joon-Min Park
- G11 - INFORMATION STORAGE
Information Patent Application
Nonvolatile Memory Devices Having Bit Line Discharge Control Circui...
- Publication number 20100128516
- Publication date May 27, 2010
- SAMSUNG ELECTRONICS CO., LTD.
- Beak-hyung Cho
- G11 - INFORMATION STORAGE
Information Patent Application
PHASE CHANGE RANDOM ACCESS MEMORY DEVICE
- Publication number 20100118601
- Publication date May 13, 2010
- Samsung Electronics Co., Ltd.
- Mu-hui PARK
- G11 - INFORMATION STORAGE
Information Patent Application
Phase change memory device generating program current and method th...
- Publication number 20100110781
- Publication date May 6, 2010
- Beak-Hyung Cho
- G11 - INFORMATION STORAGE
Information Patent Application
PHASE CHANGE MEMORY DEVICES AND SYSTEMS, AND RELATED PROGRAMMING ME...
- Publication number 20100103726
- Publication date Apr 29, 2010
- Samsung Electronics Co., Ltd.
- Jun-Soo BAE
- G11 - INFORMATION STORAGE
Information Patent Application
APPARATUS AND SYSTEMS USING PHASE CHANGE MEMORIES
- Publication number 20100097850
- Publication date Apr 22, 2010
- SAMSUNG ELECTRONICS CO., LTD.
- Beak-Hyung Cho
- G11 - INFORMATION STORAGE
Information Patent Application
Method for reducing a reset current for resetting a portion of a ph...
- Publication number 20100015785
- Publication date Jan 21, 2010
- Chang-Wook JEONG
- G11 - INFORMATION STORAGE
Information Patent Application
Phase change memory
- Publication number 20090316474
- Publication date Dec 24, 2009
- SAMSUNG ELECTRONICS CO., LTD.
- Beak-Hyung Cho
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICES AND METHODS HAVING CORE STRUCTURES FOR...
- Publication number 20090279351
- Publication date Nov 12, 2009
- Joon Min Park
- G11 - INFORMATION STORAGE
Information Patent Application
Phase change random access memory
- Publication number 20090225590
- Publication date Sep 10, 2009
- Hyung-rok Oh
- G11 - INFORMATION STORAGE
Information Patent Application
Phase-change random access memories capable of suppressing coupling...
- Publication number 20090213646
- Publication date Aug 27, 2009
- SAMSUNG ELECTRONICS CO., LTD.
- Byung-Gil CHOI
- G11 - INFORMATION STORAGE
Information Patent Application
Phase-change random access memory capable of reducing word line res...
- Publication number 20090213647
- Publication date Aug 27, 2009
- SAMSUNG ELECTRONICS CO., LTD.
- Byung-gil Choi
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE WITH STACKED MEMORY CELL AND METHOD OF...
- Publication number 20090168493
- Publication date Jul 2, 2009
- Samsung Electronics Co., Ltd.
- Sung-Min Kim
- G11 - INFORMATION STORAGE
Information Patent Application
Semiconductor device having memory array, method of writing, and sy...
- Publication number 20090141567
- Publication date Jun 4, 2009
- Kwang Jin Lee
- G11 - INFORMATION STORAGE
Information Patent Application
Write driver circuit for phase-change memory, memory including the...
- Publication number 20090122593
- Publication date May 14, 2009
- Beak-hyung Cho
- G11 - INFORMATION STORAGE
Information Patent Application
POWER SUPPLYING CIRCUIT AND PHASE-CHANGE RANDOM ACCESS MEMORY INCLU...
- Publication number 20090122601
- Publication date May 14, 2009
- Samsung Electronics Co., Ltd.
- Beak-hyung CHO
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY SYSTEM, MEMORY DEVICE AND APPARATUS INCLUDING WRITING DRIVER...
- Publication number 20090059658
- Publication date Mar 5, 2009
- Samsung Electronics Co., Ltd.
- Beak-Hyung Cho
- G11 - INFORMATION STORAGE
Information Patent Application
NONVOLATILE MEMORY DEVICE USING RESISTIVE ELEMENTS AND AN ASSOCIATE...
- Publication number 20090040819
- Publication date Feb 12, 2009
- Samsung Electronics Co., Ltd.
- Beak-Hyung CHO
- G11 - INFORMATION STORAGE
Information Patent Application
PHASE CHANGE MEMORY DEVICES EMPLOYING CELL DIODES AND METHODS OF FA...
- Publication number 20080303016
- Publication date Dec 11, 2008
- Woo-Yeong Cho
- G11 - INFORMATION STORAGE
Information Patent Application
RESISTANCE VARIABLE MEMORY DEVICE AND READ METHOD THEREOF
- Publication number 20080232161
- Publication date Sep 25, 2008
- Samsung Electronics Co., Ltd.
- Byung-Gil Choi
- G11 - INFORMATION STORAGE

Beak Hyung Cho

Person

Patents Grantslast 30 patents

Nonvolatile memory device with reduced coupling noise and driving m...

Nonvolatile memory device using variable resistive element

Semiconductor memory device having dummy bit line

Voltage control method to minimize a coupling noise between adjacen...

Phase change memory device generating program current and method th...

Memory cell array biasing method and a semiconductor memory device

Phase-change random access memory capable of reducing word line res...

Semiconductor device having memory array, method of writing, and sy...

Apparatus and systems using phase change memories

Semiconductor memory device with stacked memory cell and method of...

Variable resistance memory device and system thereof

Phase change memory devices and systems, and related programming me...

Nonvolatile memory device, storage system having the same, and meth...

Nonvolatile memory devices having bit line discharge control circui...

Phase change memory

Phase change memory devices employing cell diodes and methods of fa...

Phase change random access memory device

Apparatus and systems using phase change memories

Semiconductor memory devices having core structures for multi-writing

Phase change memory device generating program current and method th...

Phase-change random access memories capable of suppressing coupling...

Method for reducing a reset current for resetting a portion of a ph...

Method of testing PRAM device

Write driver circuit for phase-change memory, memory including the...

Phase random access memory with high density

Nonvolatile memory device using variable resistive elements

Power supplying circuit and phase-change random access memory inclu...

Phase change random access memory

Nonvolatile memory device using resistive elements and an associate...

Method of testing PRAM device

Patents Applicationslast 30 patents

Nonvolatile Memory Device with Reduced Coupling Noise and Driving M...

NONVOLATILE MEMORY DEVICE USING VARIABLE RESISTIVE ELEMENT

Semiconductor Memory Device Having Dummy Bit Line

VOLTAGE CONTROL METHOD AND MEMORY DEVICE USING THE SAME

Apparatus and Systems Using Phase Change Memories

Phase change memory device generating program current and mehtod th...

NONVOLATILE MEMORY DEVICE, STORAGE SYSTEM HAVING THE SAME, AND METH...

VARIABLE RESISTANCE MEMORY DEVICE AND SYSTEM THEREOF

MEMORY CELL ARRAY BIASING METHOD AND A SEMICONDUCTOR MEMORY DEVICE

METHOD OF TESTING PRAM DEVICE

Semiconductor device having resistance based memory array, method o...

Nonvolatile Memory Devices Having Bit Line Discharge Control Circui...

PHASE CHANGE RANDOM ACCESS MEMORY DEVICE

Phase change memory device generating program current and method th...

PHASE CHANGE MEMORY DEVICES AND SYSTEMS, AND RELATED PROGRAMMING ME...

APPARATUS AND SYSTEMS USING PHASE CHANGE MEMORIES

Method for reducing a reset current for resetting a portion of a ph...

Phase change memory

SEMICONDUCTOR MEMORY DEVICES AND METHODS HAVING CORE STRUCTURES FOR...

Phase change random access memory

Phase-change random access memories capable of suppressing coupling...

Phase-change random access memory capable of reducing word line res...

SEMICONDUCTOR MEMORY DEVICE WITH STACKED MEMORY CELL AND METHOD OF...

Semiconductor device having memory array, method of writing, and sy...

Write driver circuit for phase-change memory, memory including the...

POWER SUPPLYING CIRCUIT AND PHASE-CHANGE RANDOM ACCESS MEMORY INCLU...

MEMORY SYSTEM, MEMORY DEVICE AND APPARATUS INCLUDING WRITING DRIVER...

NONVOLATILE MEMORY DEVICE USING RESISTIVE ELEMENTS AND AN ASSOCIATE...

PHASE CHANGE MEMORY DEVICES EMPLOYING CELL DIODES AND METHODS OF FA...

RESISTANCE VARIABLE MEMORY DEVICE AND READ METHOD THEREOF