Benjamin A. Haskell

Person

Carlsbad, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Methods for producing composite GaN nanocolumns and light emitting...
- Patent number 11,322,652
- Issue date May 3, 2022
- Ostendo Technologies, Inc.
- Anna Volkova
- C30 - CRYSTAL GROWTH
Information Patent Grant
Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N...
- Patent number 10,529,892
- Issue date Jan 7, 2020
- The Regents of the University of California
- Robert M. Farrell
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Apparatus and methods to remove unbonded areas within bonded substr...
- Patent number 10,373,830
- Issue date Aug 6, 2019
- Ostendo Technologies, Inc.
- Hussein S. El-Ghoroury
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for improving wafer planarity and bonded wafer assemblies m...
- Patent number 9,978,582
- Issue date May 22, 2018
- Ostendo Technologies, Inc.
- Gregory Batinica
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N...
- Patent number 9,793,435
- Issue date Oct 17, 2017
- The Regents of the University of California
- Robert M. Farrell
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Enhanced performance active pixel array and epitaxial growth method...
- Patent number 9,660,135
- Issue date May 23, 2017
- Ostendo Technologies, Inc.
- Hussein S. El-Ghoroury
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semi-polar III-nitride films and materials and method for making th...
- Patent number 9,443,727
- Issue date Sep 13, 2016
- Ostendo Technologies, Inc.
- Vitali Soukhoveev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N...
- Patent number 9,231,376
- Issue date Jan 5, 2016
- The Regents of the University of California
- Robert M. Farrell
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Fabrication of nonpolar indium gallium nitride thin films, heterost...
- Patent number 8,882,935
- Issue date Nov 11, 2014
- The Regents of the University of California
- Arpan Chakraborty
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N...
- Patent number 8,686,466
- Issue date Apr 1, 2014
- The Regents of the University of California
- Robert M. Farrell
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Technique for the growth of planar semi-polar gallium nitride
- Patent number 8,524,012
- Issue date Sep 3, 2013
- The Regents of the University of California
- Troy J. Baker
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Fabrication of nonpolar indium gallium nitride thin films, heterost...
- Patent number 8,502,246
- Issue date Aug 6, 2013
- The Regents of the University of California
- Arpan Chakraborty
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Growth of planar, non-polar, group-III nitride films
- Patent number 8,450,192
- Issue date May 28, 2013
- The Regents of the University of California
- Benjamin A. Haskell
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for enhancing growth of semipolar (Al,In,Ga,B)N via metalorg...
- Patent number 8,405,128
- Issue date Mar 26, 2013
- The Regents of the University of California
- Hitoshi Sato
- C30 - CRYSTAL GROWTH
Information Patent Grant
Miscut semipolar optoelectronic device
- Patent number 8,368,179
- Issue date Feb 5, 2013
- The Regents of the University of California
- John F. Kaeding
- C30 - CRYSTAL GROWTH
Information Patent Grant
Lateral growth method for defect reduction of semipolar nitride films
- Patent number 8,148,244
- Issue date Apr 3, 2012
- The Regents of the University of California
- Troy J. Baker
- C30 - CRYSTAL GROWTH
Information Patent Grant
Technique for the growth of planar semi-polar gallium nitride
- Patent number 8,128,756
- Issue date Mar 6, 2012
- The Regents of the University of California
- Troy J. Baker
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Miscut semipolar optoelectronic device
- Patent number 8,110,482
- Issue date Feb 7, 2012
- The Regents of the University of California
- John F. Kaeding
- C30 - CRYSTAL GROWTH
Information Patent Grant
Growth of planar reduced dislocation density M-plane gallium nitrid...
- Patent number 7,956,360
- Issue date Jun 7, 2011
- The Regents of the University of California
- Benjamin A. Haskell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Growth of reduced dislocation density non-polar gallium nitride
- Patent number 7,847,293
- Issue date Dec 7, 2010
- The Regents of the University of California
- Benjamin A. Haskell
- C30 - CRYSTAL GROWTH
Information Patent Grant
Technique for the growth and fabrication of semipolar (Ga,A1,In,B)N...
- Patent number 7,846,757
- Issue date Dec 7, 2010
- The Regents of the University of California
- Robert M. Farrell, Jr.
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Etching technique for the fabrication of thin (Al, In, Ga)N layers
- Patent number 7,795,146
- Issue date Sep 14, 2010
- The Regents of the University of California
- James S. Speck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Technique for the growth of planar semi-polar gallium nitride
- Patent number 7,704,331
- Issue date Apr 27, 2010
- The Regents of the University of California
- Troy J. Baker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for improved growth of semipolar (Al,In,Ga,B)N
- Patent number 7,691,658
- Issue date Apr 6, 2010
- The Regents of the University of California
- John F. Kaeding
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for enhancing growth of semipolar (Al,In,Ga,B)N via metalorg...
- Patent number 7,687,293
- Issue date Mar 30, 2010
- The Regents of the University of California
- Hiroshi Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for enhancing growth of semi-polar (Al,In,Ga,B)N via metalor...
- Patent number 7,575,947
- Issue date Aug 18, 2009
- The Regents of the University of California
- Michael Iza
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of nonpolar indium gallium nitride thin films, heterost...
- Patent number 7,504,274
- Issue date Mar 17, 2009
- The Regents of the University of California
- Arpan Chakraborty
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Growth of planar, non-polar gallium nitride by hydride vapor phase...
- Patent number 7,427,555
- Issue date Sep 23, 2008
- The Regents of the University of California
- Benjamin A. Haskell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Technique for the growth of planar semi-polar gallium nitride
- Patent number 7,220,324
- Issue date May 22, 2007
- The Regents of the University of California
- Troy J. Baker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Growth of reduced dislocation density non-polar gallium nitride by...
- Patent number 7,220,658
- Issue date May 22, 2007
- The Regents of the University of California
- Benjamin A Haskell
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
TECHNIQUE FOR THE GROWTH AND FABRICATION OF SEMIPOLAR (Ga,Al,In,B)N...
- Publication number 20180013035
- Publication date Jan 11, 2018
- The Regents of the University of California
- Robert M. Farrell
- B82 - NANO-TECHNOLOGY
Information Patent Application
Apparatus and Methods to Remove Unbonded Areas Within Bonded Substr...
- Publication number 20170263457
- Publication date Sep 14, 2017
- OSTENDO TECHNOLOGIES, INC.
- Hussein S. El-Ghoroury
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for Improving Wafer Planarity and Bonded Wafer Assemblies M...
- Publication number 20170178891
- Publication date Jun 22, 2017
- OSTENDO TECHNOLOGIES, INC.
- Gregory Batinica
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for Producing Composite GaN Nanocolumns and Light Emitting...
- Publication number 20170170363
- Publication date Jun 15, 2017
- OSTENDO TECHNOLOGIES, INC.
- Anna Volkova
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNIQUE FOR THE GROWTH AND FABRICATION OF SEMIPOLAR (Ga,Al,In,B)N...
- Publication number 20160079738
- Publication date Mar 17, 2016
- The Regents of the University of California
- Robert M. Farrell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semi-Polar III-Nitride Films and Materials and Method for Making th...
- Publication number 20140353685
- Publication date Dec 4, 2014
- Vitali Soukhoveev
- C30 - CRYSTAL GROWTH
Information Patent Application
Enhanced Performance Active Pixel Array and Epitaxial Growth Method...
- Publication number 20140349427
- Publication date Nov 27, 2014
- Hussein S. El-Ghoroury
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNIQUE FOR THE GROWTH AND FABRICATION OF SEMIPOLAR (Ga,Al,In,B)N...
- Publication number 20140211820
- Publication date Jul 31, 2014
- Japan Science and Technology Agency
- Robert M. Farrell
- B82 - NANO-TECHNOLOGY
Information Patent Application
MISCUT SEMIPOLAR OPTOELECTRONIC DEVICE
- Publication number 20140183579
- Publication date Jul 3, 2014
- Japan Science and Technology Agency
- John F. Kaeding
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION OF NONPOLAR INDIUM GALLIUM NITRIDE THIN FILMS, HETEROST...
- Publication number 20130264540
- Publication date Oct 10, 2013
- Japan Science and Technology Agency
- Arpan Chakraborty
- B82 - NANO-TECHNOLOGY
Information Patent Application
METHOD FOR ENHANCING GROWTH OF SEMIPOLAR (Al,In,Ga,B)N VIA METALORG...
- Publication number 20130168833
- Publication date Jul 4, 2013
- Hitoshi Sato
- C30 - CRYSTAL GROWTH
Information Patent Application
NITRIDE SUBSTRATES, THIN FILMS, HETEROSTRUCTURES AND DEVICES FOR EN...
- Publication number 20120187454
- Publication date Jul 26, 2012
- INLUSTRA TECHNOLOGIES, LLC
- Benjamin Haskell
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR ENHANCING GROWTH OF SEMI-POLAR (Al,In,Ga,B)N VIA METALOR...
- Publication number 20120161287
- Publication date Jun 28, 2012
- Japan Science and Technology Agency
- Michael Iza
- C30 - CRYSTAL GROWTH
Information Patent Application
TECHNIQUE FOR THE GROWTH OF PLANAR SEMI-POLAR GALLIUM NITRIDE
- Publication number 20120119222
- Publication date May 17, 2012
- The Regents of the University of California
- Troy J. Baker
- C30 - CRYSTAL GROWTH
Information Patent Application
ENHANCED SPONTANEOUS SEPARATION METHOD FOR PRODUCTION OF FREE-STAND...
- Publication number 20120094434
- Publication date Apr 19, 2012
- Benjamin Allen Haskell
- C30 - CRYSTAL GROWTH
Information Patent Application
LATERAL GROWTH METHOD FOR DEFECT REDUCTION OF SEMIPOLAR NITRIDE FILMS
- Publication number 20120074524
- Publication date Mar 29, 2012
- The Regents of the University of California
- Troy J. Baker
- C30 - CRYSTAL GROWTH
Information Patent Application
GROWTH OF REDUCED DISLOCATION DENSITY NON-POLAR GALLIUM NITRIDE
- Publication number 20120074425
- Publication date Mar 29, 2012
- Japan Science and Technology Agency
- Benjamin A. Haskell
- C30 - CRYSTAL GROWTH
Information Patent Application
MISCUT SEMIPOLAR OPTOELECTRONIC DEVICE
- Publication number 20120074525
- Publication date Mar 29, 2012
- Japan Science and Technology Agency
- John F. Kaeding
- C30 - CRYSTAL GROWTH
Information Patent Application
GROWTH OF REDUCED DISLOCATION DENSITY NON-POLAR GALLIUM NITRIDE
- Publication number 20110278585
- Publication date Nov 17, 2011
- Japan Science and Technology Agency
- Benjamin A. Haskell
- C30 - CRYSTAL GROWTH
Information Patent Application
GROWTH OF PLANAR REDUCED DISLOCATION DENSITY M-PLANE GALLIUM NITRID...
- Publication number 20110193094
- Publication date Aug 11, 2011
- The Regents of the University of California
- Benjamin A. Haskell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNIQUE FOR THE GROWTH AND FABRICATION OF SEMIPOLAR (GA,AL,IN,B)N...
- Publication number 20110062449
- Publication date Mar 17, 2011
- The Regents of the University of California
- Robert M. Farrell, JR.
- C30 - CRYSTAL GROWTH
Information Patent Application
ETCHING TECHNIQUE FOR THE FABRICATION OF THIN (Al, In, Ga)N LAYERS
- Publication number 20100320475
- Publication date Dec 23, 2010
- The Regents of the University of California
- James S. Speck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR ENHANCING GROWTH OF SEMIPOLAR (AL,IN,GA,B)N VIA METALORG...
- Publication number 20100155778
- Publication date Jun 24, 2010
- The Regents of the University of California
- Hitoshi Sato
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR IMPROVED GROWTH OF SEMIPOLAR (AL,IN,GA,B)N
- Publication number 20100148195
- Publication date Jun 17, 2010
- The Regents of the University of California
- John F. Kaeding
- C30 - CRYSTAL GROWTH
Information Patent Application
TECHNIQUE FOR THE GROWTH OF PLANAR SEMI-POLAR GALLIUM NITRIDE
- Publication number 20100133663
- Publication date Jun 3, 2010
- The Regents of the University of California
- Troy J. Baker
- C30 - CRYSTAL GROWTH
Information Patent Application
ENHANCED SPONTANEOUS SEPARATION METHOD FOR PRODUCTION OF FREE-STAND...
- Publication number 20100025727
- Publication date Feb 4, 2010
- Benjamin Allen Haskell
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR ENHANCING GROWTH OF SEMI-POLAR (AL,IN,GA,B)N VIA METALOR...
- Publication number 20090184342
- Publication date Jul 23, 2009
- Michael Iza
- C30 - CRYSTAL GROWTH
Information Patent Application
FABRICATION OF NONPOLAR INDIUM GALLIUM NITRIDE THIN FILMS, HETEROST...
- Publication number 20090146162
- Publication date Jun 11, 2009
- The Regents of the University of California
- Arpan Chakraborty
- C30 - CRYSTAL GROWTH
Information Patent Application
GROWTH OF PLANAR, NON-POLAR, GROUP-III NITRIDE FILMS
- Publication number 20090001519
- Publication date Jan 1, 2009
- The Regents of the University of California
- Benjamin A. Haskell
- C30 - CRYSTAL GROWTH
Information Patent Application
NITRIDE SUBSTRATES, THIN FILMS, HETEROSTRUCTURES AND DEVICES FOR EN...
- Publication number 20080296626
- Publication date Dec 4, 2008
- Benjamin Haskell
- C30 - CRYSTAL GROWTH

Benjamin A. Haskell

Person

Patents Grantslast 30 patents

Methods for producing composite GaN nanocolumns and light emitting...

Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N...

Apparatus and methods to remove unbonded areas within bonded substr...

Methods for improving wafer planarity and bonded wafer assemblies m...

Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N...

Enhanced performance active pixel array and epitaxial growth method...

Semi-polar III-nitride films and materials and method for making th...

Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N...

Fabrication of nonpolar indium gallium nitride thin films, heterost...

Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N...

Technique for the growth of planar semi-polar gallium nitride

Fabrication of nonpolar indium gallium nitride thin films, heterost...

Growth of planar, non-polar, group-III nitride films

Method for enhancing growth of semipolar (Al,In,Ga,B)N via metalorg...

Miscut semipolar optoelectronic device

Lateral growth method for defect reduction of semipolar nitride films

Technique for the growth of planar semi-polar gallium nitride

Miscut semipolar optoelectronic device

Growth of planar reduced dislocation density M-plane gallium nitrid...

Growth of reduced dislocation density non-polar gallium nitride

Technique for the growth and fabrication of semipolar (Ga,A1,In,B)N...

Etching technique for the fabrication of thin (Al, In, Ga)N layers

Technique for the growth of planar semi-polar gallium nitride

Method for improved growth of semipolar (Al,In,Ga,B)N

Method for enhancing growth of semipolar (Al,In,Ga,B)N via metalorg...

Method for enhancing growth of semi-polar (Al,In,Ga,B)N via metalor...

Fabrication of nonpolar indium gallium nitride thin films, heterost...

Growth of planar, non-polar gallium nitride by hydride vapor phase...

Technique for the growth of planar semi-polar gallium nitride

Growth of reduced dislocation density non-polar gallium nitride by...

Patents Applicationslast 30 patents

TECHNIQUE FOR THE GROWTH AND FABRICATION OF SEMIPOLAR (Ga,Al,In,B)N...

Apparatus and Methods to Remove Unbonded Areas Within Bonded Substr...

Methods for Improving Wafer Planarity and Bonded Wafer Assemblies M...

Methods for Producing Composite GaN Nanocolumns and Light Emitting...

TECHNIQUE FOR THE GROWTH AND FABRICATION OF SEMIPOLAR (Ga,Al,In,B)N...

Semi-Polar III-Nitride Films and Materials and Method for Making th...

Enhanced Performance Active Pixel Array and Epitaxial Growth Method...

TECHNIQUE FOR THE GROWTH AND FABRICATION OF SEMIPOLAR (Ga,Al,In,B)N...

MISCUT SEMIPOLAR OPTOELECTRONIC DEVICE

FABRICATION OF NONPOLAR INDIUM GALLIUM NITRIDE THIN FILMS, HETEROST...

METHOD FOR ENHANCING GROWTH OF SEMIPOLAR (Al,In,Ga,B)N VIA METALORG...

NITRIDE SUBSTRATES, THIN FILMS, HETEROSTRUCTURES AND DEVICES FOR EN...

METHOD FOR ENHANCING GROWTH OF SEMI-POLAR (Al,In,Ga,B)N VIA METALOR...

TECHNIQUE FOR THE GROWTH OF PLANAR SEMI-POLAR GALLIUM NITRIDE

ENHANCED SPONTANEOUS SEPARATION METHOD FOR PRODUCTION OF FREE-STAND...

LATERAL GROWTH METHOD FOR DEFECT REDUCTION OF SEMIPOLAR NITRIDE FILMS

GROWTH OF REDUCED DISLOCATION DENSITY NON-POLAR GALLIUM NITRIDE

MISCUT SEMIPOLAR OPTOELECTRONIC DEVICE

GROWTH OF REDUCED DISLOCATION DENSITY NON-POLAR GALLIUM NITRIDE

GROWTH OF PLANAR REDUCED DISLOCATION DENSITY M-PLANE GALLIUM NITRID...

TECHNIQUE FOR THE GROWTH AND FABRICATION OF SEMIPOLAR (GA,AL,IN,B)N...

ETCHING TECHNIQUE FOR THE FABRICATION OF THIN (Al, In, Ga)N LAYERS

METHOD FOR ENHANCING GROWTH OF SEMIPOLAR (AL,IN,GA,B)N VIA METALORG...

METHOD FOR IMPROVED GROWTH OF SEMIPOLAR (AL,IN,GA,B)N

TECHNIQUE FOR THE GROWTH OF PLANAR SEMI-POLAR GALLIUM NITRIDE

ENHANCED SPONTANEOUS SEPARATION METHOD FOR PRODUCTION OF FREE-STAND...

METHOD FOR ENHANCING GROWTH OF SEMI-POLAR (AL,IN,GA,B)N VIA METALOR...

FABRICATION OF NONPOLAR INDIUM GALLIUM NITRIDE THIN FILMS, HETEROST...

GROWTH OF PLANAR, NON-POLAR, GROUP-III NITRIDE FILMS

NITRIDE SUBSTRATES, THIN FILMS, HETEROSTRUCTURES AND DEVICES FOR EN...