Benjamin G. Moser

Follow

Person

Malta, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Metal resistor forming method using ion implantation
- Patent number 10,263,065
- Issue date Apr 16, 2019
- GLOBALFOUNDRIES Inc.
- Domingo A. Ferrer Luppi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming uniform and pitch independent fin recess
- Patent number 9,875,939
- Issue date Jan 23, 2018
- GLOBALFOUNDRIES Inc.
- Yue Ke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate stack for integrated circuit structure and method of forming same
- Patent number 9,748,235
- Issue date Aug 29, 2017
- GLOBALFOUNDRIES Inc.
- Aritra Dasgupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming semiconductor fin with carbon dopant for diffusi...
- Patent number 9,685,334
- Issue date Jun 20, 2017
- GLOBALFOUNDRIES Inc.
- Yue Ke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain terminal contact and method of forming same
- Patent number 9,583,397
- Issue date Feb 28, 2017
- GLOBALFOUNDRIES Inc.
- Derya Deniz
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
GATE STACK FOR INTEGRATED CIRCUIT STRUCTURE AND METHOD OF FORMING SAME
- Publication number 20170221889
- Publication date Aug 3, 2017
- GLOBALFOUNDRIES INC.
- Aritra Dasgupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL RESISTOR FORMING METHOD USING ION IMPLANTATION
- Publication number 20170125509
- Publication date May 4, 2017
- GLOBALFOUNDRIES INC.
- Domingo A. Ferrer Luppi
- H01 - BASIC ELECTRIC ELEMENTS