Benjamin Heying

Person

Fullerton, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor devices using insulator-metal phase change materials...
- Patent number 11,018,296
- Issue date May 25, 2021
- Northrop Grumman Systems Corporation
- Vincent Gambin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices using insulator-metal phase change materials...
- Patent number 10,811,601
- Issue date Oct 20, 2020
- Northrop Grumman Systems Corporation
- Vincent Gambin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
AIN buffer N-polar GaN HEMT profile
- Patent number 8,710,511
- Issue date Apr 29, 2014
- Northrop Grumman Systems Corporation
- Vincent Gambin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Composite passivation process for nitride FET
- Patent number 8,431,962
- Issue date Apr 30, 2013
- Northrop Grumman Systems Corporation
- Benjamin Heying
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a high electron mobility transistor hemt, utilizi...
- Patent number 7,897,446
- Issue date Mar 1, 2011
- Northrop Grumman Systems Corporation
- Ioulia Smorchkova
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor having self-aligned miniature fie...
- Patent number 7,750,370
- Issue date Jul 6, 2010
- Northrop Grumman Space & Mission Systems Corp.
- Ioulia Smorchkova
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a nitride FET including passivation layers
- Patent number 7,632,726
- Issue date Dec 15, 2009
- Northrop Grumman Space & Mission Systems Corp.
- Benjamin Heying
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Semiconductor Devices Using Insulator-Metal Phase Change Materials...
- Publication number 20200235293
- Publication date Jul 23, 2020
- Northrop Grumman Systems Corporation
- Vincent Gambin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AlN BUFFER N-POLAR GaN HEMT PROFILE
- Publication number 20130026489
- Publication date Jan 31, 2013
- NORTHROP GRUMMAN SYSTEMS CORPORATION
- Vincent Gambin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High electron mobility transistor having self-aligned miniature fie...
- Publication number 20100184262
- Publication date Jul 22, 2010
- Northrop Grumman Space & Mission Systems Corp.
- Ioulia Smorchkova
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High electron mobility transistor having self-aligned miniature fie...
- Publication number 20090159930
- Publication date Jun 25, 2009
- Northrop Grumman Space and Mission System Corp.
- loulia Smorchkova
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Composite Passivation Process for Nitride FET
- Publication number 20090146224
- Publication date Jun 11, 2009
- Northrop Grumman Space & Mission Systems Corp.
- Benjamin Heying
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Fabricating a Nitride FET Including Passivation Layers
- Publication number 20090148985
- Publication date Jun 11, 2009
- Northrop Grumman Space & Mission Systems Corp.
- Benjamin Heying
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Protective layer in device fabrication
- Publication number 20080199993
- Publication date Aug 21, 2008
- Benjamin Heying
- H01 - BASIC ELECTRIC ELEMENTS

Benjamin Heying

Person

Patents Grantslast 30 patents

Semiconductor devices using insulator-metal phase change materials...

Semiconductor devices using insulator-metal phase change materials...

AIN buffer N-polar GaN HEMT profile

Composite passivation process for nitride FET

Method of forming a high electron mobility transistor hemt, utilizi...

High electron mobility transistor having self-aligned miniature fie...

Method for fabricating a nitride FET including passivation layers

Patents Applicationslast 30 patents

Semiconductor Devices Using Insulator-Metal Phase Change Materials...

AlN BUFFER N-POLAR GaN HEMT PROFILE

High electron mobility transistor having self-aligned miniature fie...

High electron mobility transistor having self-aligned miniature fie...

Composite Passivation Process for Nitride FET

Method for Fabricating a Nitride FET Including Passivation Layers

Protective layer in device fabrication