Beom-jun Jin

Person

Seoul, KR

People

Patents Grantslast 30 patents

Information Patent Grant
Circuit board having bypass pad
- Patent number 9,627,360
- Issue date Apr 18, 2017
- Samsung Electronics Co., Ltd.
- Sang-Guk Han
- G11 - INFORMATION STORAGE
Information Patent Grant
Circuit board having bypass pad
- Patent number 9,449,716
- Issue date Sep 20, 2016
- Samsung Electronics Co., Ltd.
- Sang-Guk Han
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods of forming non-volatile memory devices including vertical N...
- Patent number 9,373,633
- Issue date Jun 21, 2016
- Samsung Electronics Co., Ltd.
- Beom-jun Jin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Circuit board having bypass pad
- Patent number 9,171,644
- Issue date Oct 27, 2015
- Samsung Electronics Co., Ltd.
- Sang-Guk Han
- G11 - INFORMATION STORAGE
Information Patent Grant
Circuit board having bypass pad
- Patent number 9,069,036
- Issue date Jun 30, 2015
- Samsung Electronics Co., Ltd.
- Sang-Guk Han
- H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Methods of forming non-volatile memory devices including vertical N...
- Patent number 8,971,118
- Issue date Mar 3, 2015
- Samsung Electronics Co., Ltd.
- Beom-jun Jin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Circuit board having bypass pad
- Patent number 8,917,107
- Issue date Dec 23, 2014
- Samsung Electronics Co., Ltd.
- Sang-Guk Han
- H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Non-volatile memory devices including vertical NAND strings and met...
- Patent number 8,659,946
- Issue date Feb 25, 2014
- Samsung Electronics Co., Ltd.
- Beom-jun Jin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory devices including vertical NAND strings and met...
- Patent number 8,325,527
- Issue date Dec 4, 2012
- Samsung Electronics Co., Ltd.
- Beom-jun Jin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile semiconductor memory device and method of manufacturin...
- Patent number 7,785,964
- Issue date Aug 31, 2010
- Samsung Electronics Co., Ltd.
- Jin-Jun Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming different gate structures in NMOS and PMOS regio...
- Patent number 7,399,670
- Issue date Jul 15, 2008
- Samsung Electronics Co., Ltd.
- Taek-Soo Jeon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device test patterns and related methods for precisel...
- Patent number 7,271,408
- Issue date Sep 18, 2007
- Samsung Electronics Co., Ltd.
- Young-Pil Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming capacitors of semiconductor devices including si...
- Patent number 7,153,750
- Issue date Dec 26, 2006
- Samsung Electronics Co., Ltd.
- Eun-ae Chung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having transistor and method of manufacturing...
- Patent number 7,060,575
- Issue date Jun 13, 2006
- Samsung Electronics Co., Ltd.
- Beom-jun Jin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of manufacturing integrated circuit devices having reduced...
- Patent number 7,009,257
- Issue date Mar 7, 2006
- Samsung Electronics Co., Ltd.
- Young-pil Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device having multi-layered storage node conta...
- Patent number 6,984,568
- Issue date Jan 10, 2006
- Samsung Electronics Co., Ltd.
- Beom-jun Jin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of manufacturing integrated circuit devices having contact...
- Patent number 6,897,109
- Issue date May 24, 2005
- Samsung Electronics Co., Ltd.
- Beom-Jun Jin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming contact holes using multiple insulating layers
- Patent number 6,818,551
- Issue date Nov 16, 2004
- Samsung Electronics Co., Ltd.
- Beom-Jun Jin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of manufacturing integrated circuit devices having reduced...
- Patent number 6,689,654
- Issue date Feb 10, 2004
- Samsung Electronics Co., Ltd.
- Young-pil Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device having multilayered storage node contac...
- Patent number 6,664,585
- Issue date Dec 16, 2003
- Samsung Electronics Co., Ltd.
- Beom-jun Jin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having transistor
- Patent number 6,576,963
- Issue date Jun 10, 2003
- Samsung Electronics Co. Ltd.
- Beom-jun Jin
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
CIRCUIT BOARD HAVING BYPASS PAD
- Publication number 20170018535
- Publication date Jan 19, 2017
- Samsung Electronics Co., Ltd.
- Sang-Guk Han
- G11 - INFORMATION STORAGE
Information Patent Application
CIRCUIT BOARD HAVING BYPASS PAD
- Publication number 20150257255
- Publication date Sep 10, 2015
- Samsung Electronics Co., Ltd.
- Sang-Guk Han
- G11 - INFORMATION STORAGE
Information Patent Application
CIRCUIT BOARD HAVING BYPASS PAD
- Publication number 20150243371
- Publication date Aug 27, 2015
- Samsung Electronics Co., Ltd.
- Sang-Guk Han
- G01 - MEASURING TESTING
Information Patent Application
Methods of Forming Non-Volatile Memory Devices Including Vertical N...
- Publication number 20150140813
- Publication date May 21, 2015
- Beom-jun Jin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-VOLATILE MEMORY DEVICES INCLUDING VERTICAL NAND STRINGS AND MET...
- Publication number 20140141610
- Publication date May 22, 2014
- Beom-jun Jin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-VOLATILE MEMORY DEVICES INCLUDING VERTICAL NAND STRINGS AND MET...
- Publication number 20130095653
- Publication date Apr 18, 2013
- Samsung Electronics Co., Ltd.
- Beom-jun Jin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-VOLATILE MEMORY DEVICES INCLUDING VERTICAL NAND STRINGS AND MET...
- Publication number 20090310415
- Publication date Dec 17, 2009
- Beom-jun Jin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Non-volatile semiconductor memory device and method of manufacturin...
- Publication number 20090008699
- Publication date Jan 8, 2009
- SAMSUNG ELECTRONICS CO., LTD.
- Jin-Jun Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gate electrode, method of forming the same, transistor having the g...
- Publication number 20070063295
- Publication date Mar 22, 2007
- Samsung Electronics Co.,Ltd.
- In-Sang Jeon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOS semiconductor devices having polysilicon gate electrodes and hi...
- Publication number 20070032008
- Publication date Feb 8, 2007
- Hye-Min Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having a barrier layer and method of manufactu...
- Publication number 20060151826
- Publication date Jul 13, 2006
- Beom-Jun Jin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of forming different gate structures in NMOS and PMOS regio...
- Publication number 20060030097
- Publication date Feb 9, 2006
- Taek-Soo Jeon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of forming a thin layer including hafnium silicon oxide usi...
- Publication number 20060019501
- Publication date Jan 26, 2006
- SAMSUNG ELECTRONICS CO., LTD.
- Beom-Jun Jin
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Methods of forming a thin film structure, and a gate structure and...
- Publication number 20060013946
- Publication date Jan 19, 2006
- Hong-Bae Park
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Capacitors of semiconductor devices including silicon-germanium and...
- Publication number 20040259308
- Publication date Dec 23, 2004
- Eun-ae Chung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of manufacturing integrated circuit devices having contact...
- Publication number 20040224454
- Publication date Nov 11, 2004
- Beom-Jun Jin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device test patterns and related methods for precisel...
- Publication number 20040188745
- Publication date Sep 30, 2004
- Young-Pil Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of manufacturing integrated circuit devices having reduced...
- Publication number 20040129981
- Publication date Jul 8, 2004
- Young-Pil Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated circuit devices including low dielectric side wall space...
- Publication number 20040099957
- Publication date May 27, 2004
- Beom-jun Jin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor memory device having multi-layered storage node conta...
- Publication number 20040061162
- Publication date Apr 1, 2004
- Beom-jun Jin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having transistor and method of manufacturing...
- Publication number 20030197229
- Publication date Oct 23, 2003
- Beom-Jun Jin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of forming contact holes using multiple insulating layers a...
- Publication number 20030048679
- Publication date Mar 13, 2003
- Beom-Jun Jin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING TRANSISTOR
- Publication number 20020175385
- Publication date Nov 28, 2002
- Beom-Jun Jin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor memory device having multilayered storage node contac...
- Publication number 20020093035
- Publication date Jul 18, 2002
- Beom-jun Jin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of manufacturing integrated circuit devices having reduced...
- Publication number 20020090786
- Publication date Jul 11, 2002
- Young-Pil Kim
- H01 - BASIC ELECTRIC ELEMENTS

Beom-jun Jin

Person

Patents Grantslast 30 patents

Circuit board having bypass pad

Circuit board having bypass pad

Methods of forming non-volatile memory devices including vertical N...

Circuit board having bypass pad

Circuit board having bypass pad

Methods of forming non-volatile memory devices including vertical N...

Circuit board having bypass pad

Non-volatile memory devices including vertical NAND strings and met...

Non-volatile memory devices including vertical NAND strings and met...

Non-volatile semiconductor memory device and method of manufacturin...

Methods of forming different gate structures in NMOS and PMOS regio...

Semiconductor device test patterns and related methods for precisel...

Methods of forming capacitors of semiconductor devices including si...

Semiconductor device having transistor and method of manufacturing...

Methods of manufacturing integrated circuit devices having reduced...

Semiconductor memory device having multi-layered storage node conta...

Methods of manufacturing integrated circuit devices having contact...

Methods of forming contact holes using multiple insulating layers

Methods of manufacturing integrated circuit devices having reduced...

Semiconductor memory device having multilayered storage node contac...

Semiconductor device having transistor

Patents Applicationslast 30 patents

CIRCUIT BOARD HAVING BYPASS PAD

CIRCUIT BOARD HAVING BYPASS PAD

CIRCUIT BOARD HAVING BYPASS PAD

Methods of Forming Non-Volatile Memory Devices Including Vertical N...

NON-VOLATILE MEMORY DEVICES INCLUDING VERTICAL NAND STRINGS AND MET...

NON-VOLATILE MEMORY DEVICES INCLUDING VERTICAL NAND STRINGS AND MET...

NON-VOLATILE MEMORY DEVICES INCLUDING VERTICAL NAND STRINGS AND MET...

Non-volatile semiconductor memory device and method of manufacturin...

Gate electrode, method of forming the same, transistor having the g...

MOS semiconductor devices having polysilicon gate electrodes and hi...

Semiconductor device having a barrier layer and method of manufactu...

Methods of forming different gate structures in NMOS and PMOS regio...

Methods of forming a thin layer including hafnium silicon oxide usi...

Methods of forming a thin film structure, and a gate structure and...

Capacitors of semiconductor devices including silicon-germanium and...

Methods of manufacturing integrated circuit devices having contact...

Semiconductor device test patterns and related methods for precisel...

Methods of manufacturing integrated circuit devices having reduced...

Integrated circuit devices including low dielectric side wall space...

Semiconductor memory device having multi-layered storage node conta...

Semiconductor device having transistor and method of manufacturing...

Methods of forming contact holes using multiple insulating layers a...

SEMICONDUCTOR DEVICE HAVING TRANSISTOR

Semiconductor memory device having multilayered storage node contac...

Methods of manufacturing integrated circuit devices having reduced...