Bernard W. Boland

Person

Phoenix, AZ, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method of making a semiconductor device having improved frequency r...
- Patent number 5,254,491
- Issue date Oct 19, 1993
- Motorola, Inc.
- Bernard W. Boland
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High reverse voltage IGT
- Patent number 5,237,183
- Issue date Aug 17, 1993
- Motorola, Inc.
- Gary V. Fay
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method therefore
- Patent number 5,145,795
- Issue date Sep 8, 1992
- Motorola, Inc.
- Paul W. Sanders
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Planar dielectric isolated wafer
- Patent number 5,114,875
- Issue date May 19, 1992
- Motorola, Inc.
- Thomas R. Baker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for planarizing isolated regions
- Patent number 5,084,407
- Issue date Jan 28, 1992
- Motorola, Inc.
- Bernard W. Boland
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated high voltage transistors having minimum transistor to tr...
- Patent number 5,077,594
- Issue date Dec 31, 1991
- Motorola, Inc.
- Lowell E. Clark
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of dielectrically isolated semiconductor device
- Patent number 5,001,075
- Issue date Mar 19, 1991
- Motorola
- Bernard W. Boland
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monolithic temperature compensated voltage-reference diode and meth...
- Patent number 4,886,762
- Issue date Dec 12, 1989
- Motorola Inc.
- Bernard W. Boland
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monolithic temperature compensated voltage-reference diode and meth...
- Patent number 4,870,467
- Issue date Sep 26, 1989
- Motorola, Inc.
- Bernard W. Boland
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for dielectrically isolated semiconductor structure
- Patent number 4,649,630
- Issue date Mar 17, 1987
- Motorola, Inc.
- Bernard W. Boland
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxially isolated semiconductor device process utilizing etch an...
- Patent number 4,636,269
- Issue date Jan 13, 1987
- Motorola Inc.
- Bernard W. Boland
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing and epitaxially isolated semiconductor uti...
- Patent number 4,609,413
- Issue date Sep 2, 1986
- Motorola, Inc.
- Bernard W. Boland
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating an ensulated gate field-effect device
- Patent number 4,010,290
- Issue date Mar 1, 1977
- Motorola, Inc.
- Bernard W. Boland
- H01 - BASIC ELECTRIC ELEMENTS

Bernard W. Boland

Person

Patents Grantslast 30 patents

Method of making a semiconductor device having improved frequency r...

High reverse voltage IGT

Semiconductor device and method therefore

Planar dielectric isolated wafer

Method for planarizing isolated regions

Integrated high voltage transistors having minimum transistor to tr...

Fabrication of dielectrically isolated semiconductor device

Monolithic temperature compensated voltage-reference diode and meth...

Monolithic temperature compensated voltage-reference diode and meth...

Process for dielectrically isolated semiconductor structure

Epitaxially isolated semiconductor device process utilizing etch an...

Method for manufacturing and epitaxially isolated semiconductor uti...

Method of fabricating an ensulated gate field-effect device