Bernd Leonhard Zippelius

Person

Erlangen, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Method of producing a silicon carbide device with a trench gate
- Patent number 11,888,032
- Issue date Jan 30, 2024
- Infineon Technologies AG
- Caspar Leendertz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide device with trench gate
- Patent number 11,552,173
- Issue date Jan 10, 2023
- Infineon Technologies AG
- Caspar Leendertz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC device with channel regions extending along at least one of the...
- Patent number 11,462,611
- Issue date Oct 4, 2022
- Infineon Technologies AG
- Thomas Aichinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including a passivation structure and manufact...
- Patent number 11,211,303
- Issue date Dec 28, 2021
- Infineon Technologies AG
- Jens Peter Konrath
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor component with edge termination struc...
- Patent number 11,145,755
- Issue date Oct 12, 2021
- Infineon Technologies AG
- Larissa Wehrhahn-Kilian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor component
- Patent number 11,063,144
- Issue date Jul 13, 2021
- Infineon Technologies AG
- Roland Rupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC power semiconductor device with integrated Schottky junction
- Patent number 10,985,248
- Issue date Apr 20, 2021
- Infineon Technologies AG
- Caspar Leendertz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC device and methods of manufacturing thereof
- Patent number 10,896,952
- Issue date Jan 19, 2021
- Infineon Technologies AG
- Thomas Aichinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with junction termination zone
- Patent number 10,861,964
- Issue date Dec 8, 2020
- Infineon Technologies AG
- Roland Rupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with transistor cells and a drift structure an...
- Patent number 10,700,182
- Issue date Jun 30, 2020
- Infineon Technologies AG
- Thomas Aichinger
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
SiC trench transistor device and methods of manufacturing thereof
- Patent number 10,586,845
- Issue date Mar 10, 2020
- Infineon Technologies AG
- Thomas Aichinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with termination structure including field zon...
- Patent number 10,541,325
- Issue date Jan 21, 2020
- Infineon Technologies AG
- Rudolf Elpelt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with diode region and trench gate structure
- Patent number 10,211,306
- Issue date Feb 19, 2019
- Infineon Technologies AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide device and a method for manufacturing a silicon car...
- Patent number 9,245,944
- Issue date Jan 26, 2016
- Infineon Technologies AG
- Roland Rupp
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SILICON CARBIDE DEVICE WITH A STRIPE-SHAPED TRENCH GATE STRUCTURE
- Publication number 20240136406
- Publication date Apr 25, 2024
- INFINEON TECHNOLOGIES AG
- Caspar Leendertz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING A SEMICONDUCTOR D...
- Publication number 20240072122
- Publication date Feb 29, 2024
- INFINEON TECHNOLOGIES AG
- Michael Hell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF PRODUCING A SILICON CARBIDE DEVICE WITH A TRENCH GATE
- Publication number 20230094032
- Publication date Mar 30, 2023
- Caspar Leendertz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SiC Device with Channel Regions Extending Along at least one of the...
- Publication number 20210118986
- Publication date Apr 22, 2021
- Thomas Aichinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon Carbide Device with Trench Gate
- Publication number 20210050421
- Publication date Feb 18, 2021
- Caspar Leendertz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SiC Device and Methods of Manufacturing Thereof
- Publication number 20200194544
- Publication date Jun 18, 2020
- INFINEON TECHNOLOGIES AG
- Thomas Aichinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING A PASSIVATION STRUCTURE AND MANUFACT...
- Publication number 20200185297
- Publication date Jun 11, 2020
- INFINEON TECHNOLOGIES AG
- Jens Peter Konrath
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SiC Power Semiconductor Device with Integrated Schottky Junction
- Publication number 20200161433
- Publication date May 21, 2020
- Caspar Leendertz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING SILICON CARBIDE BODY AND TRANSISTOR...
- Publication number 20200006544
- Publication date Jan 2, 2020
- INFINEON TECHNOLOGIES AG
- Ralf SIEMIENIEC
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon Carbide Semiconductor Component
- Publication number 20190296141
- Publication date Sep 26, 2019
- Roland Rupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon Carbide Semiconductor Component with Edge Termination Struc...
- Publication number 20190165159
- Publication date May 30, 2019
- Larissa Wehrhahn-Kilian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Termination Structure Including Field Zon...
- Publication number 20190131447
- Publication date May 2, 2019
- INFINEON TECHNOLOGIES AG
- Rudolf Elpelt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Junction Termination Zone
- Publication number 20190131446
- Publication date May 2, 2019
- INFINEON TECHNOLOGIES AG
- Roland Rupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Transistor Cells and a Drift Structure an...
- Publication number 20180331204
- Publication date Nov 15, 2018
- INFINEON TECHNOLOGIES AG
- Thomas Aichinger
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Semiconductor Device with Diode Region and Trench Gate Structure
- Publication number 20180158920
- Publication date Jun 7, 2018
- INFINEON TECHNOLOGIES AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Wide-Bandgap Semiconductor Device with Trench Gate Structures
- Publication number 20170345905
- Publication date Nov 30, 2017
- INFINEON TECHNOLOGIES AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon Carbide Device and a Method for Manufacturing A Silicon Car...
- Publication number 20150008447
- Publication date Jan 8, 2015
- INFINEON TECHNOLOGIES AG
- Roland Rupp
- H01 - BASIC ELECTRIC ELEMENTS

Bernd Leonhard Zippelius

Person

Patents Grantslast 30 patents

Method of producing a silicon carbide device with a trench gate

Silicon carbide device with trench gate

SiC device with channel regions extending along at least one of the...

Semiconductor device including a passivation structure and manufact...

Silicon carbide semiconductor component with edge termination struc...

Silicon carbide semiconductor component

SiC power semiconductor device with integrated Schottky junction

SiC device and methods of manufacturing thereof

Semiconductor device with junction termination zone

Semiconductor device with transistor cells and a drift structure an...

SiC trench transistor device and methods of manufacturing thereof

Semiconductor device with termination structure including field zon...

Semiconductor device with diode region and trench gate structure

Silicon carbide device and a method for manufacturing a silicon car...

Patents Applicationslast 30 patents

SILICON CARBIDE DEVICE WITH A STRIPE-SHAPED TRENCH GATE STRUCTURE

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING A SEMICONDUCTOR D...

METHOD OF PRODUCING A SILICON CARBIDE DEVICE WITH A TRENCH GATE

SiC Device with Channel Regions Extending Along at least one of the...

Silicon Carbide Device with Trench Gate

SiC Device and Methods of Manufacturing Thereof

SEMICONDUCTOR DEVICE INCLUDING A PASSIVATION STRUCTURE AND MANUFACT...

SiC Power Semiconductor Device with Integrated Schottky Junction

SEMICONDUCTOR DEVICE INCLUDING SILICON CARBIDE BODY AND TRANSISTOR...

Silicon Carbide Semiconductor Component

Silicon Carbide Semiconductor Component with Edge Termination Struc...

Semiconductor Device with Termination Structure Including Field Zon...

Semiconductor Device with Junction Termination Zone

Semiconductor Device with Transistor Cells and a Drift Structure an...

Semiconductor Device with Diode Region and Trench Gate Structure

Wide-Bandgap Semiconductor Device with Trench Gate Structures

Silicon Carbide Device and a Method for Manufacturing A Silicon Car...